US4295898A
Expired / Lapsed
US
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Method of making isolated semiconductor devices utilizing ion-implantation of aluminum and heat treating
Assignee: Panasonic Holdings Corp
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Filing: 1980-05-08
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Granted: 1981-10-20
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Expires: 2000-05-08
Abstract
Abstract In forming p + -type isolation region to define an isolated n-type island region in an n-type epitaxial layer grown on a p-type semiconductor substrate, the p + -type isolation region is formed by burying, prior to the growing of the epitaxial layer, an Al-ion-implanted region in the p-type substrate by means of ion implantation and subsequent heat-treatment for driving-in, thereby enabling a very quick forming of the isolation region and an accurate control of the resistivity of the epitaxial layer.
Inventors
- 👤 Masakatsu Yoshida
- 👤 Yoshihiko Tochio
- 👤 Atsutomo Tohi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:57
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/204; H10P30/28; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/1406; H10P32/17; H10P32/171; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30; Y; Y10; Y10S; Y10S257/00; Y10S257/918
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
128 words
Method of making semiconductor device comprising the steps of ion-implanting Al-ions in a predetermined part of the surface of a p-type silicon substrate, heat treating said substrate to diffuse said Al-ions thereby forming p + -type buried region in said substrate, epitaxially growing an n-type epitaxial layer having a predetermined thickness on said p-type silicon substrate, ion-implanting Al-ions on the part of the surface of said n-type epitaxial layer over said p + -type buried region thereby to form p + -type surface ion-implanted region, heat treating said substrate and the n-type epitaxial layer thereby to make diffusions of Al-ions from said buried region and said surface ion-implanted region into said n-type epitaxial layer, thereby forming a p + -type isolation region continuously across said n-type epitaxial layer.
Claim 2
Dependent Claim
128 words
Method of making semiconductor device comprising the steps of ion-implanting Al-ions in a predetermined part of the surface of a p-type silicon substrate, heat treating said substrate to diffuse said Al-ions thereby forming p + -type buried region in said substrate, epitaxially growing an n-type epitaxial layer having a predetermined thickness on said p-type silicon substrate, ion-implanting Al-ions on the part of the surface of said n-type epitaxial layer over said p + -type buried region thereby to form p + -type surface ion-implanted region, heat treating said substrate and the n-type epitaxial layer thereby to make diffusions of Al-ions from said buried region and said surface ion-implanted region into said n-type epitaxial layer, thereby forming a p + -type isolation region continuously across said n-type epitaxial layer.
Claim 3
Dependent Claim
29 words
Method of making semiconductor device in accordance with claim 1, wherein B + -ions are ion-implanted when ion-implanting Al + -ions on the surface of said n-type epitaxial layer.
Claim 4
Dependent Claim
27 words
Method of making semiconductor device in accordance with claim 1, wherein prior to said epitaxial growing, principal surface of said silicon substrate is etched by HCl gas.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-10-19 | 1985-04-20 | 1985-10-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-10-19 | 1989-04-20 | 1989-10-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-10-19 | 1993-04-20 | 1993-10-20 | $7700.00 | Window Closed / Lapsed |