US4295148A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabrication of electroluminescent and photodetecting diodes
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1979-03-21
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Granted: 1981-10-13
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Expires: 1999-03-21
Abstract
Abstract A layer of thickness x j is formed at the surface of a wafer of p-type ZnTe semiconductor material and compensated so as to provide insulation with high resistivity. Ions are implanted with sufficient energy to form a trapping region of thickness x 1 at the surface of the semiconductor and to form beneath the trapping region an insulating region of thickness x 3 , with x 1 <x j . The diode has high efficiency both for emission of light having well-defined wavelengths and for current generation when subjected to light radiation.
Inventors
- 👤 Jean Marine
- 👤 Michel Ravetto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:34
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/123; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2212; H10F30/2215; H10F55/00; H10F55/18; H10H; H10H20/00; H10H20/80; H10H20/81; Y; Y10; Y10S; Y10S148/00; Y10S148/084; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
99 words
A method of fabricating electroluminescent and photodetecting diodes, comprising (a) providing a wafer of p-type ZnTe semi-conductor material; (b) forming a compensated layer of thickness x j in a first surface of said wafer in such a manner as to provide insulation with high resistivity; (c) implanting ions in the first surface with sufficient energy to form a trapping region of thickness x 1 and to form beneath said trapping region an insulating region of thickness x 2 , with x 1 <x j ; and (d) forming a metallic contact layer on a second surface of the wafer.
Claim 2
Independent Claim
99 words
A method of fabricating electroluminescent and photodetecting diodes, comprising (a) providing a wafer of p-type ZnTe semi-conductor material; (b) forming a compensated layer of thickness x j in a first surface of said wafer in such a manner as to provide insulation with high resistivity; (c) implanting ions in the first surface with sufficient energy to form a trapping region of thickness x 1 and to form beneath said trapping region an insulating region of thickness x 2 , with x 1 <x j ; and (d) forming a metallic contact layer on a second surface of the wafer.
Claim 3
Dependent Claim
46 words
A method according to claim 1, wherein a conductive deposit which is intended to serve as an electrical contact is formed on the surface of said compensated layer prior to step (b) thereof, and wherein said ion implantation is thereafter carried out through said conductive deposit.
Claim 4
Dependent Claim
73 words
A method according to claim 2, wherein the said step (b) is carried out by forming a metallic deposit on the surface of said wafer, heating said wafer in such a manner as to obtain a diffusion of atoms of the material constituting said metallic deposit to a depth x j , said deposit being such that the diffused atoms produce an insulating compensated region of thickness x j within the ZnTe material.
Claim 5
Dependent Claim
28 words
A method according to claim 3, wherein the material constituting the metallic deposit is selected from the group comprising aluminum, indium, magnesium, gold, indium oxide and stannic oxide.
Claim 6
Dependent Claim
14 words
A method according to claim 3, wherein the material is aluminum or indium oxide.
Claim 7
Independent Claim
32 words
A method according to any one of claims 1 to 5, wherein the thickness x j is equal at a maximum to the sum of thickness x 1 and x 2 .
Claim 8
Dependent Claim
25 words
A method according to claim 6, wherein the thickness x j is substantially equal to the sum of thicknesses x 1 and x 2 .
Claim 9
Independent Claim
48 words
A method according to any of claims 3 to 5, wherein the energy of implantation of ions through the metallic deposit is such that the peak value of the gaussian curve of distribution of implanted ions coincides substantially with the interface between said metallic deposit and compensated region.
Claim 10
Independent Claim
20 words
A method according to any one of claims 1 to 5, wherein the wafer of ZnTe starting material is overdoped.
Claim 11
Dependent Claim
24 words
A method according to claim 9, wherein the ZnTe starting material contains a carrier density of 10 17 to 10 18 at/cm 3 .
Claim 12
Dependent Claim
21 words
An electroluminescent and/or photodetecting diode fabricated by means of the method defined according to any one of claims 1 to 5.
Claim 13
Dependent Claim
47 words
An electroluminescent and/or photodetecting diode of ZnTe comprising a substrate of p-type ZnTe, a trapping region at a surface of the substrate, a resistive region below said trapping region having a resistivity of the order of 10 7 to 10 9 cm, and an electrical surface contact.
Claim 14
Dependent Claim
47 words
An electroluminescent and/or photodetecting diode of ZnTe comprising a substrate of p-type ZnTe, a trapping region at a surface of the substrate, a resistive region below said trapping region having a resistivity of the order of 10 7 to 10 9 cm, and an electrical surface contact.
Claim 15
Dependent Claim
27 words
A diode according to claim 12, wherein said substrate of ZnTe has a carrier density of the order of 10 17 to 10 18 at/cm 3 .
References Cited (Backward Citations)
US3366819A
Cited
US3732471A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-10-12 | 1985-04-13 | 1985-10-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-10-12 | 1989-04-13 | 1989-10-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-10-12 | 1993-04-13 | 1993-10-13 | $7700.00 | Window Closed / Lapsed |