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US4293372A Expired / Lapsed US ⏱️ 0.0 years remaining

Growth of single-crystal magnetoplumbite

Assignee: Boeing North American Inc
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Filing: 1980-07-15
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Granted: 1981-10-06
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Expires: 2000-07-15
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Abstract

Abstract Single crystal magnetoplumbite is grown at temperatures under 1000° C. from a fluxed melt having a selected concentration ratio of boron oxide to lead oxide and a selected concentration of iron oxide sufficient to cause magnetoplumbite to crystallize yet not so much iron oxide as will cause the melt's crystallization temperature to exceed 1000° C.

Inventors

  • 👤 Howard L. Glass

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 18:02
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B19/00; C30B19/02; C30B9/00; H; H01; H01F; H01F10/00; H01F10/08; H01F10/10; H01F10/18; H01F10/20; H01F10/205

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 151 words
A method of growing single-crystal magnetoplumbite, comprising the steps of: forming a fluxed melt comprising boron oxide (B 2 O 3 ), lead oxide (PbO) and iron oxide (Fe 2 O 3 ), wherein the mole ratio of boron oxide to lead oxide in said melt is at least about 0.06, wherein the concentration of iron oxide in said melt is at least about 15 mole percent, and wherein the concentration of iron oxide in said melt is limited to less than that which would cause the melt to have a crystallization temperature at or over 1000° C.; and cooling said fluxed melt to a temperature at or below 943° C., whereby said flux will be in a supersaturated state capable of supporting the growth of single crystals of magnetoplumbite by spontaneous nucleation, by growth on seed crystal, and by growth on a single-crystal substrate placed in contact with said melt.
Claim 2
Independent Claim 151 words
A method of growing single-crystal magnetoplumbite, comprising the steps of: forming a fluxed melt comprising boron oxide (B 2 O 3 ), lead oxide (PbO) and iron oxide (Fe 2 O 3 ), wherein the mole ratio of boron oxide to lead oxide in said melt is at least about 0.06, wherein the concentration of iron oxide in said melt is at least about 15 mole percent, and wherein the concentration of iron oxide in said melt is limited to less than that which would cause the melt to have a crystallization temperature at or over 1000° C.; and cooling said fluxed melt to a temperature at or below 943° C., whereby said flux will be in a supersaturated state capable of supporting the growth of single crystals of magnetoplumbite by spontaneous nucleation, by growth on seed crystal, and by growth on a single-crystal substrate placed in contact with said melt.
Claim 3
Dependent Claim 22 words
The method recited in claim 1, further comprising the step of: growing single crystal magnetoplumbite in an open container for said melt.
Claim 4
Dependent Claim 121 words
Single-crystal gallium-substituted or aluminum-substituted magnetoplumbite grown from a fluxed melt, wherein said fluxed melt comprises: boron oxide (B 2 O 3 ); lead oxide (PbO); iron oxide (Fe 2 O 3 ); and gallium oxide or aluminum oxide; wherein the mole ratio of boron oxide to lead oxide in said melt is at least about 0.06; wherein the concentration of iron oxide in said melt is at least about 15 mole percent; wherein the concentration of iron oxide in said melt is limited to less than that which would cause the melt to have a crystallization temperature at or over 943° C.; and wherein the concentration of gallium oxide or aluminum oxide in said melt does not exceed 0.4 mole percent.
Claim 5
Dependent Claim 121 words
Single-crystal gallium-substituted or aluminum-substituted magnetoplumbite grown from a fluxed melt, wherein said fluxed melt comprises: boron oxide (B 2 O 3 ); lead oxide (PbO); iron oxide (Fe 2 O 3 ); and gallium oxide or aluminum oxide; wherein the mole ratio of boron oxide to lead oxide in said melt is at least about 0.06; wherein the concentration of iron oxide in said melt is at least about 15 mole percent; wherein the concentration of iron oxide in said melt is limited to less than that which would cause the melt to have a crystallization temperature at or over 943° C.; and wherein the concentration of gallium oxide or aluminum oxide in said melt does not exceed 0.4 mole percent.
Claim 6
Dependent Claim 30 words
The fluxed melt recited in claim 3, wherein the concentration of iron oxide in said melt is in the range from about 15 mole percent to about 20 mole percent.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1984-10-05 1985-04-06 1985-10-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1988-10-05 1989-04-06 1989-10-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1992-10-05 1993-04-06 1993-10-06 $7700.00 Window Closed / Lapsed

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