US4291323A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Indium phosphide arsenide based devices
Assignee: AT&T Inc
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Filing: 1980-05-01
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Granted: 1981-09-22
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Expires: 2000-05-01
Abstract
Abstract Devices based on InAs 1-x P x where 0.85≦x<1 show advantageous properties. An exemplary device is a rectifying diode formed from indium tin oxide deposited on the subject InAs 1-x P x .
Inventors
- 👤 Klaus J. Bachmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:01
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1248; H10D; H10D62/00; H10D62/80; H10D62/82; H10F10/00; H10F10/10; H10F10/16; H10F71/00; H10F71/127; H10F71/1272; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
76 words
A device comprising a region of a first semiconductor material comprising InAs 1-x P x in intimate contact with a region of a second material and means for applying a voltage to said first semiconductor material CHARACTERIZED IN THAT said first semiconductor material is InAs 1-x P x where 0.85≦x<1 and wherein said second material comprises a composition chosen from the group consisting of indium tin oxide and indium oxide whereby a rectifying junction is formed.
Claim 2
Independent Claim
76 words
A device comprising a region of a first semiconductor material comprising InAs 1-x P x in intimate contact with a region of a second material and means for applying a voltage to said first semiconductor material CHARACTERIZED IN THAT said first semiconductor material is InAs 1-x P x where 0.85≦x<1 and wherein said second material comprises a composition chosen from the group consisting of indium tin oxide and indium oxide whereby a rectifying junction is formed.
Claim 3
Dependent Claim
17 words
The device of claim 1 wherein said means for applying a voltage comprises a Au/Zn alloy contact.
Claim 4
Independent Claim
61 words
A device comprising a region of a first semiconductor material comprising InAs 1-x P x in intimate contact with a region of a second material and means for applying a voltage to said first semiconductor material CHARACTERIZED IN THAT said first semiconductor material is InAs 1-x P x where 0.85≦x<1 and wherein said second material is In y Ga 1-y As.
Claim 5
Independent Claim
61 words
A device comprising a region of a first semiconductor material comprising InAs 1-x P x in intimate contact with a region of a second material and means for applying a voltage to said first semiconductor material CHARACTERIZED IN THAT said first semiconductor material is InAs 1-x P x where 0.85≦x<1 and wherein said second material is In y Ga 1-y As.
Claim 6
Dependent Claim
16 words
The device of claim 3 wherein said means for applying voltage comprises a Au/Zn alloy contact.
References Cited (Backward Citations)
US4121238A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-09-21 | 1985-03-23 | 1985-09-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-09-21 | 1989-03-23 | 1989-09-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-09-21 | 1993-03-23 | 1993-09-22 | $7700.00 | Window Closed / Lapsed |