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US4290843A
Expired / Lapsed
US
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Epitaxial growth of magnetic memory film on implanted substrate
Assignee: Texas Instruments Inc
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Filing: 1980-02-19
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Granted: 1981-09-22
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Expires: 2000-02-19
Abstract
Abstract A method for fabricating a magnetic memory film is disclosed wherein an epitaxial layer of magnetizable material is grown on the surface of a substrate which has been selectively implanted to damage portions of the crystalline surface. The resulting polycrystalline portion of the epitaxial layer grown on the damaged substrate surface is then selectively removed to leave the monocrystalline portions of the epitaxial layer.
Inventors
- 👤 Ralph Korenstein
- 👤 Carlos A. Castro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:54
CPC Classifications
H; H01; H01F; H01F41/00; H01F41/32; H01F41/34; C; C30; C30B; C30B19/00; C30B19/02; C30B19/12; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/28; H01F41/14; H01F41/24; H01F41/28
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
99 words
A method for fabricating a magnetic memory film comprising the steps of: depositing an ion mask on the surface of a crystalline substrate, and thereafter ion implanting said surface for the purpose of damaging the portion thereof exposed by the ion mask to the limited extent necessary to prevent monocrystalline growth upon said exposed portion; growing an epitaxial layer of magnetizable material having a similar crystalline structure on the surface of said substrate, the layer having a polycrystalline structure where grown over the ion damaged areas and monocrystalline structure elsewhere; selectively removing the polycrystalline portions of the epitaxial layer.
Claim 2
Independent Claim
99 words
A method for fabricating a magnetic memory film comprising the steps of: depositing an ion mask on the surface of a crystalline substrate, and thereafter ion implanting said surface for the purpose of damaging the portion thereof exposed by the ion mask to the limited extent necessary to prevent monocrystalline growth upon said exposed portion; growing an epitaxial layer of magnetizable material having a similar crystalline structure on the surface of said substrate, the layer having a polycrystalline structure where grown over the ion damaged areas and monocrystalline structure elsewhere; selectively removing the polycrystalline portions of the epitaxial layer.
Claim 3
Dependent Claim
31 words
The method of claim 1 wherein the step of removing the polycrystalline portion of the epitaxial layer comprises exposing the epitaxial layer to an etchant having a preferential poly etch rate.
Claim 4
Dependent Claim
11 words
The method of claim 2 wherein the etchant is phosphoric acid.
Claim 5
Dependent Claim
49 words
The method of claim 1 further comprising the steps of: depositing a layer of filler material over the surface of the substrate and the monocrystalline portions of the epitaxial layer; and removing substantially all of filler material above the upper surfaces of the monocrystalline portions of the epitaxial layer.
Claim 6
Dependent Claim
28 words
The method of claim 4 wherein the step of removing the filler material comprises polishing to expose the upper surfaces of the monocrystalline portions of the epitaxial layer.
Claim 7
Independent Claim
96 words
The method for fabricating a magnetic memory film comprising the steps of: depositing an ion mask on the surface of a gadolinium gallium garnet substrate, and thereafter ion implanting said surface for the purpose of damaging the portion thereof exposed by said mask to the limited extent necessary to prevent monocrystalline growth upon said exposed portions; growing an epitaxial layer of magnetizable garnet on the surface of said substrate, said epitaxial layer having a polycrystalline structure where grown over the ion damaged areas and monocrystalline structure elsewhere; selectively removing the polycrystalline portions of the epitaxial layer.
Claim 8
Independent Claim
96 words
The method for fabricating a magnetic memory film comprising the steps of: depositing an ion mask on the surface of a gadolinium gallium garnet substrate, and thereafter ion implanting said surface for the purpose of damaging the portion thereof exposed by said mask to the limited extent necessary to prevent monocrystalline growth upon said exposed portions; growing an epitaxial layer of magnetizable garnet on the surface of said substrate, said epitaxial layer having a polycrystalline structure where grown over the ion damaged areas and monocrystalline structure elsewhere; selectively removing the polycrystalline portions of the epitaxial layer.
Claim 9
Dependent Claim
35 words
The method of claim 6 wherein the step of removing the polycrystalline portion of the epitaxial layer comprises exposing the epitaxial layer to an etchant having a preferential poly etch rate, such as phosphoric acid.
Claim 10
Dependent Claim
52 words
The method of claim 4 or 7 further comprising the steps of: depositing a layer of filler material over the surface of the substrate and the monocrystalline portions of the epitaxial layer; and removing substantially all of the filler material above the upper surfaces of the monocrystalline portions of the epitaxial layer.
Claim 11
Dependent Claim
28 words
The method of claim 8 wherein the step of removing the filler material comprises polishing to expose the upper surfaces of the monocrystalline portions of the epitaxial layer.
References Cited (Backward Citations)
US3808068A
Cited
US3997378A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-09-21 | 1985-03-23 | 1985-09-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-09-21 | 1989-03-23 | 1989-09-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-09-21 | 1993-03-23 | 1993-09-22 | $7700.00 | Window Closed / Lapsed |