US4286035A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Halogen doped selenium-tellurium alloy electrophotographic photoconductor
Assignee: Ricoh Co Ltd
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Filing: 1980-05-28
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Granted: 1981-08-25
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Expires: 2000-05-28
Abstract
Abstract An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, the photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 5 to 20 wt. % and halogen, with a concentration in the range of 5 to 500 ppm, selected from the group consisting of fluorine, chlorine, bromine and iodine, in the photosensitive layer, with the concentration of tellurium substantially uniform or increasing in the direction toward the surface of the photosensitive layer and the ratio of the concentration of tellurium near the electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 65 or more:100.
Inventors
- 👤 Hideyo Nishizima
- 👤 Hideaki Ema
- 👤 Hiroshi Tamura
- 👤 Hideki Akiyoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:11
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08207
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
120 words
An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, said photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 5 to 20 wt. % and halogen, with a concentration in the range of 5 to 500 ppm, selected from the group consisting of fluorine, chlorine, bromine and iodine, in said photosensitive layer, the concentration of tellurium near said electroconductive base being at 5 wt. % or more and being uniform or increasing in the direction toward the surface of said photosensitive layer and the ratio of the concentration of tellurium near said electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 65 to 100:100.
Claim 2
Dependent Claim
120 words
An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, said photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 5 to 20 wt. % and halogen, with a concentration in the range of 5 to 500 ppm, selected from the group consisting of fluorine, chlorine, bromine and iodine, in said photosensitive layer, the concentration of tellurium near said electroconductive base being at 5 wt. % or more and being uniform or increasing in the direction toward the surface of said photosensitive layer and the ratio of the concentration of tellurium near said electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 65 to 100:100.
Claim 3
Dependent Claim
120 words
An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, said photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 5 to 20 wt. % and halogen, with a concentration in the range of 5 to 500 ppm, selected from the group consisting of fluorine, chlorine, bromine and iodine, in said photosensitive layer, the concentration of tellurium near said electroconductive base being at 5 wt. % or more and being uniform or increasing in the direction toward the surface of said photosensitive layer and the ratio of the concentration of tellurium near said electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 80 to 100:100.
Claim 4
Dependent Claim
120 words
An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, said photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 5 to 20 wt. % and halogen, with a concentration in the range of 5 to 500 ppm, selected from the group consisting of fluorine, chlorine, bromine and iodine, in said photosensitive layer, the concentration of tellurium near said electroconductive base being at 5 wt. % or more and being uniform or increasing in the direction toward the surface of said photosensitive layer and the ratio of the concentration of tellurium near said electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 80 to 100:100.
Claim 5
Dependent Claim
109 words
An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, said photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 8 to 10 wt. % and chlorine with a concentration in the range of 30 to 100 ppm in said photosensitive layer, the concentration of tellurium near said electroconductive base being at 6 wt. % or more and being uniform or increasing in the direction toward the surface of said photosensitive layer and the ratio of the concentration of tellurium near said electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 65 to 100:100.
Claim 6
Dependent Claim
109 words
An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, said photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 8 to 10 wt. % and chlorine with a concentration in the range of 30 to 100 ppm in said photosensitive layer, the concentration of tellurium near said electroconductive base being at 6 wt. % or more and being uniform or increasing in the direction toward the surface of said photosensitive layer and the ratio of the concentration of tellurium near said electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 65 to 100:100.
Claim 7
Dependent Claim
29 words
An electrophotographic photoconductor as claimed in claim 3, wherein said electroconductive base is aluminum and said photosensitive layer is of a thickness in the range of 50 to 65μ.
Claim 8
Dependent Claim
109 words
An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, said photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 10 to 14 wt. % and iodine with a concentration in the range of 250 to 500 ppm in said photosensitive layer, the concentration of tellurium near said electroconductive base being at 7 wt. % or more and being uniform or increasing in the direction toward the surface of said photosensitive layer and the ratio of the concentration of tellurium near said electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 65 to 100:100.
Claim 9
Dependent Claim
109 words
An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, said photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 10 to 14 wt. % and iodine with a concentration in the range of 250 to 500 ppm in said photosensitive layer, the concentration of tellurium near said electroconductive base being at 7 wt. % or more and being uniform or increasing in the direction toward the surface of said photosensitive layer and the ratio of the concentration of tellurium near said electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 65 to 100:100.
Claim 10
Dependent Claim
29 words
An electrophotographic photoconductor as claimed in claim 5, wherein said electroconductive base is aluminum and said photosensitive layer is of a thickness in the range of 50 to 65μ.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-24 | 1985-02-23 | 1985-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-24 | 1989-02-23 | 1989-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-24 | 1993-02-23 | 1993-08-25 | $7700.00 | Window Closed / Lapsed |