US4282499A
Expired / Lapsed
US
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Optically tunable resonant structure
Assignee: United States Department of the Navy
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Filing: 1979-09-24
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Granted: 1981-08-04
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Expires: 1999-09-24
Abstract
Abstract A resonant structure, for supporting electromagnetic (EM) oscillations win a frequency range of approximately 10 GHz to 1000 GHz, and whose resonant properties are controlled by light. The structure includes an interaction material for absorbing light and forming a plasma of electron-hole pairs within the material. Kinetic and potential energy, which are stored in the EM oscillations within the resonant structure, change as a result of the plasma and shift the frequency of the oscillations.
Inventors
- 👤 Alfred P. DeFonzo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 04:46
CPC Classifications
H; H01; H01P; H01P7/00
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
95 words
A resonator, for supporting electromagnetic oscillations within the frequency range of approximately 10 GHz to 1000 GHz, having resonant properties which are controllable by light from a source of light comprising: a resonant structure having an interaction material having an optical absorption edge not greater than the wavelength of said light, said material being of a type which forms a plasma of electron-hole pairs when illuminated by said source of light, said plasma having sufficient density to change the reactance and dielectric response of said resonant structure thereby shifting the frequency of said electromagnetic oscillations.
Claim 2
Dependent Claim
95 words
A resonator, for supporting electromagnetic oscillations within the frequency range of approximately 10 GHz to 1000 GHz, having resonant properties which are controllable by light from a source of light comprising: a resonant structure having an interaction material having an optical absorption edge not greater than the wavelength of said light, said material being of a type which forms a plasma of electron-hole pairs when illuminated by said source of light, said plasma having sufficient density to change the reactance and dielectric response of said resonant structure thereby shifting the frequency of said electromagnetic oscillations.
Claim 3
Dependent Claim
13 words
A resonator as recited in claim 1, wherein said resonant structure is annular.
Claim 4
Dependent Claim
18 words
A resonator as recited in claim 2, wherein said resonant structure includes walls of broad and narrow dimensions.
Claim 5
Dependent Claim
17 words
A resonator as recited in claim 2, wherein said resonant structure consists essentially of said interaction material.
Claim 6
Dependent Claim
36 words
A resonator as recited in claim 3, wherein said broad-dimensioned wall is an external wall and said resonant structure includes a film of said interaction material attached to an external broad-dimensioned wall of said resonant structure.
Claim 7
Dependent Claim
44 words
A resonator as recited in claim 3, wherein said resonant structure is metal and said interaction material is confined between the broad- and narrow-dimensioned walls, a wall of said resonant structure having an opening through which light may pass for illuminating said interaction material.
Claim 8
Dependent Claim
15 words
A resonant structure as recited in claim 4, wherein said interaction material comprises semiconductor material.
Claim 9
Dependent Claim
23 words
A resonant structure as recited in claim 7, wherein said semiconductor material is of resistivity approximately equal to or greater than ten ohm-centimeters.
Claim 10
Dependent Claim
21 words
A resonant structure as recited in claim 7, wherein said light penetrates approximately ten percent or less of said semiconductor material.
Claim 11
Dependent Claim
22 words
A resonant structure as recited in claim 8, wherein said semiconductor material is selected from the group consisting of covalently bonded semiconductors.
Claim 12
Dependent Claim
23 words
A resonant structure as recited in claim 10, wherein said covalently bonded semiconductors are selected from the group consisting of silicon and germanium.
Claim 13
Dependent Claim
43 words
A resonant structure as recited in claim 5, wherein said resonant structure is formed from a dielectric material and said film of interaction material is formed from semiconductor material, the permittivity of the dielectric being approximately equal to the permittivity of the semiconductor.
Claim 14
Dependent Claim
23 words
A resonant structure as recited in claim 12, wherein said semiconductor material is of resistivity approximately equal to or greater than ten ohm-centimeters.
Claim 15
Dependent Claim
48 words
A resonant structure as recited in claim 12, wherein the thickness of said film of semiconductor material is approximately ten percent or less of the thickness of the narrow-dimensioned wall of said dielectric resonant structure, and said light penetrates the entire thickness of the film of semiconductor material.
Claim 16
Dependent Claim
22 words
A resonant structure as recited in claim 13, wherein said semiconductor material is selected from the group consisting of covalently bonded semiconductors.
Claim 17
Dependent Claim
23 words
A resonant structure as recited in claim 15, wherein said covalently bonded semiconductors are selected from the group consisting of silicon and germanium.
Claim 18
Dependent Claim
55 words
A resonant structure as recited in claim 6, wherein said interaction material is attached to an internal narrow-dimensioned wall of said resonant structure, a narrow-dimensioned wall of said resonant structure being opposite the wall to which said interaction material is attached and having an opening through which light may pass for illuminating said interaction material.
Claim 19
Dependent Claim
20 words
A resonant structure as recited in claim 17, wherein said internal narrow-dimensioned wall is the internal wall of large circumference.
Claim 20
Dependent Claim
17 words
A resonant structure as recited in claim 6, wherein said interaction material is formed from semiconductor material.
Claim 21
Dependent Claim
23 words
A resonant structure as recited in claim 19, wherein said semiconductor material is of resistivity approximately equal to or greater than ten ohm-centimeters.
Claim 22
Dependent Claim
40 words
A resonant structure as recited in claim 19, wherein the thickness of said semiconductor material is approximately ten percent or less of the broad-dimensioned wall of said resonant structure and said light penetrates the entire thickness of the semiconductor material.
Claim 23
Dependent Claim
22 words
A resonant structure as recited in claim 20, wherein said semiconductor material is selected from the group consisting of covalently bonded semiconductors.
Claim 24
Dependent Claim
23 words
A resonant structure as recited in claim 22, wherein said covalently bonded semiconductors are selected from the group consisting of silicon and germanium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-03 | 1985-02-02 | 1985-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-03 | 1989-02-02 | 1989-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-03 | 1993-02-02 | 1993-08-04 | $7700.00 | Window Closed / Lapsed |