US4281236A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the manufacture of electrical contacts upon semiconductor components
Assignee: BBC Brown Boveri AG Switzerland
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Filing: 1979-09-26
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Granted: 1981-07-28
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Expires: 1999-09-26
Abstract
Abstract A process for the manufacture of electrical contacts on semiconductor components, wherein a metallic layer is placed upon the surface of the semiconductor component with which contact is to be made, which layer is then sintered by heating to a predetermined temperature, characterized by the fact that the heating done for sintering purposes takes place by means of irradiation with laser light directed only upon the metallic layer, the intensity of the laser light being sufficient to bring the metallic layer and the semiconductor material to the melting point.
Inventors
- 👤 Martin vonAllmen
- 👤 Marc Wittmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 18:09
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10W; H10W72/00; H10W72/30; H10W72/01; H10W72/019; H10W72/01961; H10W72/071; H10W72/072; H10W72/07231; H10W72/073; H10W72/07331; H10W72/07335; H10W72/07336; H10W72/351; H10W72/352; Y; Y10; Y10S; Y10S148/00; Y10S148/019
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
92 words
A process for the manufacture of electrical contacts on semi-conductor components, wherein a metallic layer having a thickness of between 0.05 and 0.3 μm is placed upon the surface of a semiconductor component with which contact is to be made, and the metallic layer is then sintered by heating to a predetermined temperature, comprising: irradiating the metallic layer with laser light having an energy density between 1 and 3 Joule/cm 2 and an intensity sufficient to bring the metallic layer and the semiconductor material adjacent the metallic layer to the melting point.
Claim 2
Dependent Claim
92 words
A process for the manufacture of electrical contacts on semi-conductor components, wherein a metallic layer having a thickness of between 0.05 and 0.3 μm is placed upon the surface of a semiconductor component with which contact is to be made, and the metallic layer is then sintered by heating to a predetermined temperature, comprising: irradiating the metallic layer with laser light having an energy density between 1 and 3 Joule/cm 2 and an intensity sufficient to bring the metallic layer and the semiconductor material adjacent the metallic layer to the melting point.
Claim 3
Dependent Claim
44 words
A process as in claim 1, further comprising: applying the laser irradiation via the surface of the semiconductor opposite the metallic layer; and, irradiating said metallic layer with laser light having a frequency at which the semiconductor material is permeable to the laser light.
Claim 4
Dependent Claim
31 words
A process as in claim 2, wherein: said semiconductor component comprises a semiconductor material of silicium; and a CO 2 laser is used to produce said light in said irradiating step.
Claim 5
Dependent Claim
13 words
A semiconductor component manufactured by the process of claims 1, 2 or 3.
Claim 6
Dependent Claim
140 words
A process for the manufacture of electrical contacts on semiconductor components, wherein a metallic layer is placed upon the surface of a semiconductor component with which contact is to be made, and the metallic layer is then sintered by heating to a predetermined temperature, comprising: irradiating the metallic layer with laser light having an intensity sufficient to bring the metallic layer and the semiconductor material adjacent the metallic layer to the melting point; applying the laser irradiation via the surface of the semiconductor opposite the metallic layer; irradiating said metallic layer with laser light having a frequency at which the semiconductor material is permeable to the laser light; placing said metallic layer in contact with a cooling body; and applying laser light radiation to the contacting portions of the metallic layer and the cooling body to fuse the same together.
Claim 7
Dependent Claim
140 words
A process for the manufacture of electrical contacts on semiconductor components, wherein a metallic layer is placed upon the surface of a semiconductor component with which contact is to be made, and the metallic layer is then sintered by heating to a predetermined temperature, comprising: irradiating the metallic layer with laser light having an intensity sufficient to bring the metallic layer and the semiconductor material adjacent the metallic layer to the melting point; applying the laser irradiation via the surface of the semiconductor opposite the metallic layer; irradiating said metallic layer with laser light having a frequency at which the semiconductor material is permeable to the laser light; placing said metallic layer in contact with a cooling body; and applying laser light radiation to the contacting portions of the metallic layer and the cooling body to fuse the same together.
Claim 8
Dependent Claim
10 words
A semiconductor component manufactured by the process of claim 5.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-07-27 | 1985-01-26 | 1985-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-07-27 | 1989-01-26 | 1989-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-07-27 | 1993-01-26 | 1993-07-28 | $7700.00 | Window Closed / Lapsed |