US4278988A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device for providing a selectable reference voltage
Assignee: Unisys Corp
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Filing: 1980-02-04
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Granted: 1981-07-14
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Expires: 2000-02-04
Abstract
Abstract The disclosed semiconductor device is comprised of a substrate having a major surface; a channel having an elongated portion of a first predetermined length L 1 and a uniform width W in the substrate near the surface; a single gate completely overlying the channel; and a conductive region in the substrate near the surface contacting the elongated portion of the channel at a predetermined length L 2 from one end thereof. The conductive region picks off a reference voltage from the channel as a function of the ratio L 1 /L 2 .
Inventors
- 👤 James A. Clifford
- 👤 Daniel E. Pearson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 07:24
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24; G05F3/242; G05F3/247; H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
140 words
A semiconductor device for providing a selectable reference voltage; said device being comprised of: a semiconductor substrate doped with atoms of a first conductivity type and having a major surface; a channel having input and output terminals, and having an elongated portion of a first predetermined length L 1 and a uniform width W in said substrate near said surface for passing current between said terminals; a single gate on an insulating layer completely overlying said channel; and a conductive region in said substrate near said surface doped with atoms of a conductivity type opposite to said first type, contacting the elongated portion of said channel at a predetermined length L 2 from one end thereof, to pick-off said reference voltage as generated by said current in said channel as a function of the ratio L 1 /L 2 .
Claim 2
Dependent Claim
140 words
A semiconductor device for providing a selectable reference voltage; said device being comprised of: a semiconductor substrate doped with atoms of a first conductivity type and having a major surface; a channel having input and output terminals, and having an elongated portion of a first predetermined length L 1 and a uniform width W in said substrate near said surface for passing current between said terminals; a single gate on an insulating layer completely overlying said channel; and a conductive region in said substrate near said surface doped with atoms of a conductivity type opposite to said first type, contacting the elongated portion of said channel at a predetermined length L 2 from one end thereof, to pick-off said reference voltage as generated by said current in said channel as a function of the ratio L 1 /L 2 .
Claim 3
Dependent Claim
34 words
A semiconductor device according to claim 1 wherein said channel has a linear shape, and said gate has a pair of spaced apart sides which are respectively aligned with opposite ends of said channel.
Claim 4
Dependent Claim
47 words
A semiconductor device according to claim 2 and further including a pair of regions in said channel which are substantially wider and substantially shorter than said elongated channel portion and which contact respective ends of said elongated channel portion and extend to opposite sides of said gate.
Claim 5
Dependent Claim
28 words
A semiconductor device according to claim 1 wherein said channel has a curved shape and said gate has one side which aligns with both ends of said channel.
Claim 6
Dependent Claim
68 words
A semiconductor device according to claim 4 and further including a region in said channel having a width of ##EQU14## in contact with said one end of said elongated channel portion and extending to said side of said gate, and another region in said channel having a width W in contact with the opposite end of said elongated channel portion and extending to said side of said gate.
Claim 7
Dependent Claim
47 words
A semiconductor device according to claim 4 and further including a pair of regions in said channel which are substantially wider and substantially shorter than said elongated channel portion, and which contact respective ends of said elongated channel portion and extend to said side of said gate.
Claim 8
Dependent Claim
13 words
A semiconductor device according to claim 1 wherein said semiconductor substrate is P-type.
Claim 9
Dependent Claim
13 words
A semiconductor device according to claim 1 wherein said semiconductor substrate is N-type.
Claim 10
Dependent Claim
36 words
A semiconductor device according to claim 1 wherein said channel and said substrate both contain dopant impurity atoms and the majority charge carriers in said channel are of the same conductivity type as in said substrate.
Claim 11
Dependent Claim
36 words
A semiconductor device according to claim 1 wherein said channel and said substrate both contain dopant impurity atoms and the majority charge carriers in said channel are of the opposite conductivity type as in said substrate.
References Cited (Backward Citations)
US4068134A
Cited
US4170818A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-07-13 | 1985-01-12 | 1985-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-07-13 | 1989-01-12 | 1989-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-07-13 | 1993-01-12 | 1993-07-14 | $7700.00 | Window Closed / Lapsed |