US4270263A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Glass support light energy converter
Assignee: Indresco Inc
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Filing: 1978-08-10
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Granted: 1981-06-02
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Expires: 1998-08-10
Abstract
Abstract Semiconductor particles are distributed in a single level layer orientation in a glass sheet with portions of each particle exposed at both surfaces of the sheet. A metal layer on one surface of the sheet is in ohmic contact with the body of each particle and forms a common electrode.
Inventors
- 👤 Elwin L. Johnson
- 👤 Jack S. Kilby
- 👤 Jay W. Lathrop
- 👤 John S. McFerren
- 👤 David J. Myers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:24
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
134 words
The method of forming a distributed semiconductor unit which comprises: (a) forming semiconductor particles of substantially uniform size, each having a central body portion inside a surface layer and a PN junction therebetween; (b) casting said particles as a monolayer in a sheet of glass slurry of thickness corresponding to about the thickness of said particles; (c) fusing said glass to rigidify the glass as a sheet with said particles distributed thereon with the surface layers of said particles exposed on one side of said sheet and the body portion exposed on the other side of said sheet; and (d) applying a metal layer on one side of said sheet in contact with the body portion of each of said particles and isolated from the junction between said surface layer and said body portion.
Claim 2
Independent Claim
134 words
The method of forming a distributed semiconductor unit which comprises: (a) forming semiconductor particles of substantially uniform size, each having a central body portion inside a surface layer and a PN junction therebetween; (b) casting said particles as a monolayer in a sheet of glass slurry of thickness corresponding to about the thickness of said particles; (c) fusing said glass to rigidify the glass as a sheet with said particles distributed thereon with the surface layers of said particles exposed on one side of said sheet and the body portion exposed on the other side of said sheet; and (d) applying a metal layer on one side of said sheet in contact with the body portion of each of said particles and isolated from the junction between said surface layer and said body portion.
Claim 3
Dependent Claim
15 words
The method of claim 1 in which said particles are cast in a random array.
Claim 4
Dependent Claim
16 words
The method of claim 1 in which said particles are cast in a regular ordered array.
Claim 5
Independent Claim
220 words
The method for forming a distributed semiconductor unit which comprises: (a) forming body portions of semiconductor particles of one conductivity type and of substantially uniform size; (b) establishing a surface layer on each body portion of said particles said surface layers of a second conductivity type with a PN junction between the body portion and surface layer of each said particle; (c) casting said particles as a monolayer in a sheet of glass slurry of thickness corresponding to about the thickness of said particles; (d) fusing said glass to rigidify the glass as a sheet with said particles distributed therein and with the surface layer of said particles exposed on both sides of said sheet; (e) removing part of each said particle on one side of said sheet to a point inside said junction to expose the body portion of each said particle; (f) applying glass to cover the junction and said surface layer exposed after the removal of each said part; (g) applying a metal layer on said one side of said sheet to contact and interconnect the body portions of all said particles; and (h) applying transparent metallic electrodes to cover the surface layer of each said particle exposed at the side of said sheet opposite said metal layer, each said electrode being isolated from every other electrode.
Claim 6
Independent Claim
220 words
The method for forming a distributed semiconductor unit which comprises: (a) forming body portions of semiconductor particles of one conductivity type and of substantially uniform size; (b) establishing a surface layer on each body portion of said particles said surface layers of a second conductivity type with a PN junction between the body portion and surface layer of each said particle; (c) casting said particles as a monolayer in a sheet of glass slurry of thickness corresponding to about the thickness of said particles; (d) fusing said glass to rigidify the glass as a sheet with said particles distributed therein and with the surface layer of said particles exposed on both sides of said sheet; (e) removing part of each said particle on one side of said sheet to a point inside said junction to expose the body portion of each said particle; (f) applying glass to cover the junction and said surface layer exposed after the removal of each said part; (g) applying a metal layer on said one side of said sheet to contact and interconnect the body portions of all said particles; and (h) applying transparent metallic electrodes to cover the surface layer of each said particle exposed at the side of said sheet opposite said metal layer, each said electrode being isolated from every other electrode.
Claim 7
Dependent Claim
15 words
The method of claim 4 in which said particles are cast in a random array.
Claim 8
Dependent Claim
16 words
The method of claim 4 in which said particles are cast in a regular ordered array.
Claim 9
Dependent Claim
26 words
The method of claim 4 in which an electrode is applied to each of said particles on the side of said sheet opposite said metal layer.
Claim 10
Dependent Claim
36 words
The method of claim 4 in which about half of said particles have body portions of said one conductivity type and in which about half of said particles have body portions of said opposite conductivity type.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-06-01 | 1984-12-01 | 1985-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-06-01 | 1988-12-01 | 1989-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-06-01 | 1992-12-01 | 1993-06-02 | $7700.00 | Window Closed / Lapsed |