US4270094A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor light emitting device
Assignee: University of Illinois Foundation
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Filing: 1978-10-13
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Granted: 1981-05-26
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Expires: 1998-10-13
Abstract
Abstract Advantageous operation can be achieved in a semiconductor heterostructure light emitting device by utilizing a single thin active layer which exhibits quantum size effects. It has been found that performance can be degraded by employing a single quantum layer that is thinner than a certain minimum thickness, this minimum thickness being about 100 angstroms, (the approximate carrier scattering path length). In one form of the invention, there is provided a semiconductor heterostructure device which includes first and second relatively wide bandgap semiconductor regions of opposite conductivity types. A single quantum well active layer is disposed between the first and second regions. The active layer is formed of a relatively narrow bandgap semiconductor having a thickness which is in the range of about 100 to 400 angstroms, and is preferably about 200 angstroms. One preferred combination of materials for the device comprises aluminium gallium arsenide for the relatively wide bandgap semiconductor regions, and gallium arsenide for the single active layer. However, other combinations of materials may be suitable, for example: indium phosphide for the relatively wide bandgap regions and indium gallium phosphide arsenide for the single active layer; or indium gallium arsenide phosphide for the relatively wide bandgap regions and gallium arsenide phosphide for the single active layer; or aluminium gallium arsenide phosphide for the confining layer and gallium arsenide phosphide for the active layer. The latter two are particularly useful as emitters in the visible portion of the spectrum. In a further form of the invention, there is disclosed a semiconductor heterostructure device wherein the active region comprises one or more quantum layers of an indirect bandgap semiconductor material, preferably germanium.
Inventors
- 👤 Nick Holonyak, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:39
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; H01S5/3432
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
57 words
A semiconductor heterostructure device, comprising: first and second relatively wide bandgap semiconductor regions of opposite conductivity types; and a single quantum well active layer disposed between said first and second regions, said active layer being formed of a relatively narrow bandgap semiconductor having a thickness which is in the range between about 100 angstroms and 200 angstroms.
Claim 2
Dependent Claim
57 words
A semiconductor heterostructure device, comprising: first and second relatively wide bandgap semiconductor regions of opposite conductivity types; and a single quantum well active layer disposed between said first and second regions, said active layer being formed of a relatively narrow bandgap semiconductor having a thickness which is in the range between about 100 angstroms and 200 angstroms.
Claim 3
Dependent Claim
18 words
The device as defined by claim 1, wherein the thickness of said active layer is about 200 angstroms.
Claim 4
Dependent Claim
23 words
The device as defined by claim 1, wherein said first and second relatively wide bandgap semiconductor regions comprise Al x Ga 1-x As.
Claim 5
Dependent Claim
23 words
The device as defined by claim 2, wherein said first and second relatively wide bandgap semiconductor regions comprise Al x Ga 1-x As.
Claim 6
Dependent Claim
13 words
The device as defined by claim 1, wherein said active layer comprises GaAs.
Claim 7
Dependent Claim
13 words
The device as defined by claim 2, wherein said active layer comprises GaAs.
Claim 8
Dependent Claim
13 words
The device as defined by claim 3, wherein said active layer comprises GaAs.
Claim 9
Dependent Claim
13 words
The device as defined by claim 4, wherein said active layer comprises GaAs.
Claim 10
Dependent Claim
33 words
The device as defined by claim 1, wherein said first and second relatively wide bandgap semiconductor regions comprise InP and said active layer comprises In 1-x Ga x P 1-z As z .
Claim 11
Dependent Claim
33 words
The device as defined by claim 2, wherein said first and second relatively wide bandgap semiconductor regions comprise InP and said active layer comprises In 1-x Ga x P 1-z As z .
Claim 12
Dependent Claim
36 words
The device as defined by claim 1, wherein said first and second relatively wide bandgap semiconductor regions comprise In 1-x Ga x P 1-z As z and said active layer comprises GaAs 1-y P y .
Claim 13
Dependent Claim
36 words
The device as defined by claim 2, wherein said first and second relatively wide bandgap semiconductor regions comprise In 1-x Ga x P 1-z As z and said active layer comprises GaAs 1-y P y .
Claim 14
Dependent Claim
36 words
The device as defined by claim 1, wherein said first and second relatively wide bandgap semiconductor regions comprise Al x Ga 1-x As 1-y P y and said active layer comprises GaAs 1-y P y .
Claim 15
Dependent Claim
36 words
The device as defined by claim 2, wherein said first and second relatively wide bandgap semiconductor regions comprise Al x Ga 1-x As 1-y P y and said active layer comprises GaAs 1-y P y .
Claim 16
Dependent Claim
29 words
The device as defined by claim 1 further comprising means for applying an energizing current through said first and second regions to cause emission of light from said layer.
Claim 17
Dependent Claim
29 words
The device as defined by claim 2 further comprising means for applying an energizing current through said first and second regions to cause emission of light from said layer.
Claim 18
Dependent Claim
29 words
The device as defined by claim 7 further comprising means for applying an energizing current through said first and second regions to cause emission of light from said layer.
Claim 19
Dependent Claim
29 words
The device as defined by claim 8 further comprising means for applying an energizing current through said first and second regions to cause emission of light from said layer.
Claim 20
Dependent Claim
29 words
The device as defined by claim 13 further comprising means for applying an energizing current through said first and second regions to cause emission of light from said layer.
Claim 21
Dependent Claim
29 words
The device as defined by claim 14 further comprising means for applying an energizing current through said first and second regions to cause emission of light from said layer.
Claim 22
Dependent Claim
19 words
The device as defined by claim 1 further comprising means for optically pumping said device above its lasing threshold.
Claim 23
Dependent Claim
19 words
The device as defined by claim 2 further comprising means for optically pumping said device above its lasing threshold.
Claim 24
Dependent Claim
19 words
The device as defined by claim 7 further comprising means for optically pumping said device above its lasing threshold.
Claim 25
Dependent Claim
19 words
The device as defined by claim 8 further comprising means for optically pumping said device above its lasing threshold.
Claim 26
Dependent Claim
19 words
The device as defined by claim 13 further comprising means for optically pumping said device above its lasing threshold.
Claim 27
Dependent Claim
19 words
The device as defined by claim 14 further comprising means for optically pumping said device above its lasing threshold.
Claim 28
Dependent Claim
95 words
A semiconductor heterostructure device exhibiting luminescence, comprising: first and second Al x Ga 1-x As regions of opposite conductivity type; a single quantum well active layer of GaAs disposed between said first and second Al x Ga 1-x As regions, said active layer having a thickness which is in the range between about 100 angstroms and 200 angstroms; first and second GaAs regions respectively disposed over the outer surfaces of said first and second Al x Ga 1-x As region; and contact means for applying an electrical potential across said first and second GaAs regions.
Claim 29
Dependent Claim
95 words
A semiconductor heterostructure device exhibiting luminescence, comprising: first and second Al x Ga 1-x As regions of opposite conductivity type; a single quantum well active layer of GaAs disposed between said first and second Al x Ga 1-x As regions, said active layer having a thickness which is in the range between about 100 angstroms and 200 angstroms; first and second GaAs regions respectively disposed over the outer surfaces of said first and second Al x Ga 1-x As region; and contact means for applying an electrical potential across said first and second GaAs regions.
Claim 30
Dependent Claim
18 words
The device as defined by claim 27, wherein the thickness of said active layer is about 200 angstroms.
References Cited (Backward Citations)
US3911376A
Cited
US3982207A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-05-25 | 1984-11-24 | 1985-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-05-25 | 1988-11-24 | 1989-05-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-05-25 | 1992-11-24 | 1993-05-26 | $7700.00 | Window Closed / Lapsed |