US4268844A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Insulated gate field-effect transistors
Assignee: United States Department of the Navy
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Filing: 1979-12-31
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Granted: 1981-05-19
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Expires: 1999-12-31
Abstract
Abstract An improved normally off insulated gate field-effect transistor capable ofperation at frequencies in excess of 1 GHz wherein the substrate is a semi-insulating semiconductor. The substrate may be Fe or Cr doped InP or Fe or Cr-doped GaAs. Contacts for the source and drain electrodes are realized by forming n + contacts for the n-channel device and p + contacts for the p-channel device. Au-Sn will form n + contacts while Au-Zn will form p + contacts.
Inventors
- 👤 Larry G. Meiners
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 03:23
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D62/00; H10D62/80; H10D62/85
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
97 words
A normally off, insulated-gate field-effect transistor having low parasitic capacitances, comprising: a semi-insulating semiconductor substrate; a source contact and a drain contact spaced apart and disposed on said substrate; a dielectric layer disposed over said substrate to completely span the space between said source and drain contacts; and a gate electrode disposed on said dielectric layer to completely span the space between said source and drain contacts; whereby, charge carriers are induced electrically into the space of the semi-insulating substrate between said source and drain contacts by the application of an appropriate voltage to said gate electrode.
Claim 2
Dependent Claim
97 words
A normally off, insulated-gate field-effect transistor having low parasitic capacitances, comprising: a semi-insulating semiconductor substrate; a source contact and a drain contact spaced apart and disposed on said substrate; a dielectric layer disposed over said substrate to completely span the space between said source and drain contacts; and a gate electrode disposed on said dielectric layer to completely span the space between said source and drain contacts; whereby, charge carriers are induced electrically into the space of the semi-insulating substrate between said source and drain contacts by the application of an appropriate voltage to said gate electrode.
Claim 3
Dependent Claim
17 words
The insulated gate field-effect transistor of claim 1 wherein said substrate is single crystal semi-insulating semiconducting InP.
Claim 4
Dependent Claim
17 words
The insulated gate field-effect transistor of claim 1 wherein said substrate is single crystal semi-insulating Fe-doped InP.
Claim 5
Dependent Claim
17 words
The insulated gate field-effect transistor of claim 1 wherein said substrate is single crystal semi-insulating Cr-doped InP.
Claim 6
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 1 wherein said source and drain contacts are Au-Sn.
Claim 7
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 1 wherein said source and drain contacts are Au-Zn.
Claim 8
Dependent Claim
17 words
The insulated gate field-effect transistor of claim 1 wherein said substrate is single crystal semi-insulating semiconducting GaAs.
Claim 9
Dependent Claim
18 words
The insulated gate field-effect transistor of claim 1 wherein said substrate is single crystal semi-insulating Fe doped GaAs.
Claim 10
Dependent Claim
17 words
The insulated gate field-effect transistor of claim 1 wherein said substrate is single crystal semi-insulating Cr-doped GaAs.
Claim 11
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 2 wherein said source and drain contacts are Au-Sn.
Claim 12
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 2 wherein said source and drain contacts are Au-Zn.
Claim 13
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 3 wherein said source and drain contacts are Au-Sn.
Claim 14
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 3 wherein said source and drain contacts are Au-Zn.
Claim 15
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 4 wherein said source and drain contacts are Au-Sn.
Claim 16
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 4 wherein said source and drain contacts are Au-Zn.
Claim 17
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 7 wherein said source and drain contacts are Au-Sn.
Claim 18
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 7 wherein said source and drain contacts are Au-Zn.
Claim 19
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 8 wherein said source and drain contacts are Au-Sn.
Claim 20
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 8 wherein said source and drain contacts are Au-Zn.
Claim 21
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 9 wherein said source and drain contacts are Au-Sn.
Claim 22
Dependent Claim
16 words
The insulated gate field-effect transistor of claim 9 wherein said source and drain contacts are Au-Zn.
Claim 23
Dependent Claim
15 words
The insulated gate field-effect transistor of claim 1 wherein said dielectric layer is silicon dioxide.
Claim 24
Dependent Claim
15 words
The insulated gate field-effect transistor of claim 1 wherein said dielectric layer is silicon nitride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-05-18 | 1984-11-17 | 1985-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-05-18 | 1988-11-17 | 1989-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-05-18 | 1992-11-17 | 1993-05-19 | $7700.00 | Window Closed / Lapsed |