US4267258A
Expired / Lapsed
US
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Negative type deep ultraviolet resist
Assignee: Fujitsu Ltd
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Filing: 1979-12-10
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Granted: 1981-05-12
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Expires: 1999-12-10
Abstract
Abstract A negative type resist is provided for deep ultraviolet light lithography. This resist comprises a polymer of a diallyl ester of a dicarboxylic acid having a degree of dispersion of 3 or less, which is given by the ratio of a weight-average molecular weight Mw to a number-average molecular weight Mn. This deep UV resist can produce a fine detail resist pattern having a high resolution, and it has a high sensitivity to irradiating the coated film of the polymer on a substrate with deep UV light followed by development.
Inventors
- 👤 Yasuhiro Yoneda
- 👤 Kenro Kitamura
- 👤 Jiro Naito
- 👤 Toshisuke Kitakohji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 18:53
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/038; G03F7/0388
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
78 words
A negative type resist for deep ultraviolet light lithography derived from a polymer selected from the group consisting of (i) diallyl esters of aliphatic dicarboxylic acids having the general formula ##STR3## where n is zero or an integer from 1 to 8, and (ii) diallyl esters of aromatic dicarboxylic acids having the general formula ##STR4## where A is a phenylene or a naphthylene group, the degree of dispersion of said polymer within the range from 1 to 3.
Claim 2
Dependent Claim
78 words
A negative type resist for deep ultraviolet light lithography derived from a polymer selected from the group consisting of (i) diallyl esters of aliphatic dicarboxylic acids having the general formula ##STR3## where n is zero or an integer from 1 to 8, and (ii) diallyl esters of aromatic dicarboxylic acids having the general formula ##STR4## where A is a phenylene or a naphthylene group, the degree of dispersion of said polymer within the range from 1 to 3.
Claim 3
Dependent Claim
13 words
The resist of claim 1 having a contrast of at least approximately 1.0.
Claim 4
Dependent Claim
15 words
The resist of claim 1, said polymer being derived from diallyl carbonate or diallyl maleate.
Claim 5
Dependent Claim
14 words
The resist of claim 1, said ester of said acid comprising a diallyl dicarboxylate.
Claim 6
Dependent Claim
27 words
The resist of claim 1, said diallyl ester of an aliphatic dicarboxylic acid being diallyl oxalate, diallyl malonate, diallyl succinate, diallyl glutarate, diallyl adipate or diallyl sebacate.
Claim 7
Dependent Claim
21 words
The resist of claim 1, said diallyl ester of an aromatic dicarboxylic acid comprising diallyl pthalate, diallyl isophthalate or diallyl terephthalate.
Claim 8
Dependent Claim
19 words
The resist of claim 1, said polymer comprising a weight-average molecular weight within the range from 2000 to 500,000.
Claim 9
Dependent Claim
19 words
The resist of claim 1, said polymer comprising a weight-average molecular weight within the range from 5,000 to 100,000.
Claim 10
Dependent Claim
13 words
The resist of claim 1, said polymer comprising a heat resistant phenyl group.
Claim 11
Independent Claim
151 words
A method for producing a resist pattern on a substrate comprising the steps of: applying, to the substrate, a coating of a resist derived from a polymer of a diallyl ester of a dicarboxylic acid having a degree of dispersion within the range of from 1 to 3, said polymer being selected from the group consisting of (i) diallyl esters of aliphatic dicarboxylic acids having the general formula ##STR5## where n is zero or an integer from 1 to 8, and (ii) diallyl esters of aromatic dicarboxylic acids having the general formula ##STR6## where A is a phenylene or a naphthylene group, irradiating the resist coating with deep ultraviolet light having a wavelength of from 180 to 350 nm in accordance with a desired pattern to be formed on the substrate, and developing the irradiated coating with a solvent so as to form the desired negative resist pattern on the substrate.
Claim 12
Independent Claim
151 words
A method for producing a resist pattern on a substrate comprising the steps of: applying, to the substrate, a coating of a resist derived from a polymer of a diallyl ester of a dicarboxylic acid having a degree of dispersion within the range of from 1 to 3, said polymer being selected from the group consisting of (i) diallyl esters of aliphatic dicarboxylic acids having the general formula ##STR5## where n is zero or an integer from 1 to 8, and (ii) diallyl esters of aromatic dicarboxylic acids having the general formula ##STR6## where A is a phenylene or a naphthylene group, irradiating the resist coating with deep ultraviolet light having a wavelength of from 180 to 350 nm in accordance with a desired pattern to be formed on the substrate, and developing the irradiated coating with a solvent so as to form the desired negative resist pattern on the substrate.
Claim 13
Dependent Claim
20 words
the method of claim 10, wherein said solvent is methyl isobutyl ketone or a mixture of monochlorobenzene and isoamyl acetate.
Claim 14
Dependent Claim
22 words
The method of claim 10 comprising forming said resist pattern to have a minimum feature size as small as approximately 2 microns.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-05-11 | 1984-11-10 | 1985-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-05-11 | 1988-11-10 | 1989-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-05-11 | 1992-11-10 | 1993-05-12 | $7700.00 | Window Closed / Lapsed |