US4265859A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system
Assignee: Energy Materials Corp
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Filing: 1979-10-26
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Granted: 1981-05-05
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Expires: 1999-10-26
Abstract
Abstract A method and related apparatus are provided for producing on a semi-continuous basis polycrystalline silicon and melt replenishment for a crystal growth crucible. The silicon is deposited in low density form on the inner walls of a multi-walled reaction chamber by delivering gaseous HSiCL 3 , SiH 4 , or the like, and reducing gas if needed, through the chamber which is heated to the reaction temperature of the feed gas. After a certain amount of silicon has been produced, the chamber temperature is raised sufficiently to melt down the silicon which is then used to replenish a crystal growth crucible. The operations are then cyclically repeated. The apparatus includes a reaction chamber having a multi-walled configuration to maximize the interior surface area on which the silicon is deposited. A drain trap such as a U-shaped tube, or the like, is connected to the bottom of the reaction chamber and provided with heating elements. Silicon collected on the walls of the reaction chamber, when periodically melted, flows through the drain trap and a delivery tube to a crystal growth system. By selectively adjusting the temperature in the trap, either above or below the melting point of the silicon, the silicon is alternately liquified or solidified so that the liquid/solid transition of the silicon in the trap acts as a valve between the reaction chamber and the crystal growth system.
Inventors
- 👤 David N. Jewett
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 08:44
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; B; B01; B01J; B01J12/00; B01J12/005; C01; C01B; C01B33/00; C01B33/02; C30B15/00; Y; Y10; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1032; Y10T117/1056
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
217 words
Apparatus for producing high purity silicon and melt replenishment for a crystal growth zone on a semicontinuous basis, comprising (a) a vessel defining a reaction chamber, (b) conduit means including inlet and outlet tubes connected to said chamber for delivering and exhausting a flow of heat-reactive, silicon-bearing feed gas through said chamber, (c) first heating means operatively associated with said chamber for selectively and cyclically heating said chamber to the reaction temperature of said gas whereby silicon from said feed gas will deposit on walls of said chamber and to the melting point of silicon deposited in said chamber whereby the deposited will melt and flow to the lower portion said chamber, (d) a U-shaped drain trap connected to the lower portion of said vessel for draining molten silicon from said chamber for delivery to said zone during a melting phase of the chamber operation and when containing a sufficient quantity of silicon to block at least one part of said trap forming a seal between said zone and said chamber during a reaction phase of the chamber operation, and, (e) second heating means operatively associated with said drain trap for separately controlling the temperature thereof whereby silicon collected in said trap can be cyclically melted and solidified to control the flow of silicon from said chamber.
Claim 2
Dependent Claim
217 words
Apparatus for producing high purity silicon and melt replenishment for a crystal growth zone on a semicontinuous basis, comprising (a) a vessel defining a reaction chamber, (b) conduit means including inlet and outlet tubes connected to said chamber for delivering and exhausting a flow of heat-reactive, silicon-bearing feed gas through said chamber, (c) first heating means operatively associated with said chamber for selectively and cyclically heating said chamber to the reaction temperature of said gas whereby silicon from said feed gas will deposit on walls of said chamber and to the melting point of silicon deposited in said chamber whereby the deposited will melt and flow to the lower portion said chamber, (d) a U-shaped drain trap connected to the lower portion of said vessel for draining molten silicon from said chamber for delivery to said zone during a melting phase of the chamber operation and when containing a sufficient quantity of silicon to block at least one part of said trap forming a seal between said zone and said chamber during a reaction phase of the chamber operation, and, (e) second heating means operatively associated with said drain trap for separately controlling the temperature thereof whereby silicon collected in said trap can be cyclically melted and solidified to control the flow of silicon from said chamber.
Claim 3
Dependent Claim
72 words
Apparatus according to claim 1 wherein said vessel includes a plurality of concentric spaced walls defining a plurality of annular chambers communicating with one another the outermost of said annular chambers being connected to one of said tubes and the innermost of said annular chambers being connected to the other of said tubes whereby said feed gas will flow through all of said chambers during a reaction phase of the chamber operation.
Claim 4
Dependent Claim
17 words
Apparatus according to claim 1 including a graphite block surrounding said vessel and in surface contact therewith.
Claim 5
Dependent Claim
13 words
Apparatus according to claim 1 wherein said vessel is fabricated of fused quartz.
Claim 6
Dependent Claim
17 words
Apparatus according to claim 1 including a tubular thimble extending along the vertical centerline of said chamber.
Claim 7
Dependent Claim
24 words
Apparatus according to claim 1 including distillation means connected to said vessel for recycling unreacted exhaust gas from said chamber and returning it thereto.
Claim 8
Dependent Claim
18 words
Apparatus according to claim 3 including thermal insulating means enclosing said heating means, said block and said vessel.
Claim 9
Dependent Claim
182 words
Apparatus for producing high purity silicon on a semi-continuous basis, comprising, (a) a reactor having an inlet port adapted to receive a flow of heat-reactive, silicon producing material, for reaction in said reactor and an outlet port adapted to exhaust therefrom, (b) reactor heating means operatively associated with said reactor for selectively heating said reactor to the reaction temperature of said material to cause silicon to be formed from said material and collect in said reactor and to the melting point of silicon produced in said reactor whereby the collected silicon can be melted and allowed to flow to a lower portion of said reactor, (c) a U-shaped liquid/solid transition drain trap connected to said lower portion of said reactor for draining molten silicon from said reactor during a melting phase of the reactor operation and forming a solid seal during a reaction phase thereof and, (d) separate trap heating means operatively associated with said trap for raising and lowering the temperature of silicon in said trap above and below the melting point to control the flow of silicon from said reactor.
Claim 10
Dependent Claim
182 words
Apparatus for producing high purity silicon on a semi-continuous basis, comprising, (a) a reactor having an inlet port adapted to receive a flow of heat-reactive, silicon producing material, for reaction in said reactor and an outlet port adapted to exhaust therefrom, (b) reactor heating means operatively associated with said reactor for selectively heating said reactor to the reaction temperature of said material to cause silicon to be formed from said material and collect in said reactor and to the melting point of silicon produced in said reactor whereby the collected silicon can be melted and allowed to flow to a lower portion of said reactor, (c) a U-shaped liquid/solid transition drain trap connected to said lower portion of said reactor for draining molten silicon from said reactor during a melting phase of the reactor operation and forming a solid seal during a reaction phase thereof and, (d) separate trap heating means operatively associated with said trap for raising and lowering the temperature of silicon in said trap above and below the melting point to control the flow of silicon from said reactor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-05-04 | 1984-11-03 | 1985-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-05-04 | 1988-11-03 | 1989-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-05-04 | 1992-11-03 | 1993-05-05 | $7700.00 | Window Closed / Lapsed |