Semi-open liquid phase epitaxial growth system

Claim 2

A semi-open method for growing an epitaxial layer on a substrate, comprising the steps of: (a) placing a growth solution and the substrate within a pressure and temperature controlled container; (b) increasing the pressure within the container to reduce the vaporization of components dissolved in the solution; (c) establishing a cooling zone within the container to condense components vaporized from the solution; (d) increasing the temperature of the solution sufficiently to maintain the saturation of the solution; (e) effecting contact between the solution and the substrate; and (f) reducing the temperature of the solution at a predetermined rate, thereby causing the dissolved components in the solution to crystallize in an epitaxial layer on the substrate.

Claim 3

The method of claim 1, wherein step (b) further comprises: (b) increasing the pressure within the container by applying a source of inert gas to the container under pressure to reduce the vaporization of components dissolved in the solution.

Claim 4

The method of claim 2, further comprising, between steps (e) and (f), the step of maintaining the solution at a sufficient temperature to melt the substrate for a sufficient time to eliminate a vapor diffused layer on the substrate.

Claim 5

A semi-open method for growing an epitaxial HgCdTe layer on a CdTe substrate, comprising the steps of: (a) placing the CdTe substrate and a growth solution of Hg, Cd, and Te within a pressure and temperature controlled container; (b) flowing an inert gas through the container under pressure to reduce the vaporization of Hg from the solution; (c) establishing a cooling zone within the container to condense Hg vaporized from the solution; (d) increasing the temperature of the solution for a time sufficient to react the Hg and Cd with the Te in the solution; (e) reducing the temperature of the solution; (f) establishing contact between the solution and the substrate; (g) maintaining the solution at a temperature sufficient to melt the substrate for a time sufficient to eliminate a Hg vapor diffused layer; (h) reducing the temperature of the solution to near the saturation temperature; and (i) reducing the temperature of the solution at a rate sufficient to cause the solution to crystallize in a HgCdTe layer on the CdTe substrate.

Claim 6

A semi-open method for growing an epitaxial HgCdTe layer on a CdTe substrate, comprising the steps of: (a) placing the CdTe substrate and a growth solution of Hg, Cd, and Te within a pressure and temperature controlled container; (b) flowing an inert gas through the container under pressure to reduce the vaporization of Hg from the solution; (c) establishing a cooling zone within the container to condense Hg vaporized from the solution; (d) increasing the temperature of the solution for a time sufficient to react the Hg and Cd with the Te in the solution; (e) reducing the temperature of the solution; (f) establishing contact between the solution and the substrate; (g) maintaining the solution at a temperature sufficient to melt the substrate for a time sufficient to eliminate a Hg vapor diffused layer; (h) reducing the temperature of the solution to near the saturation temperature; and (i) reducing the temperature of the solution at a rate sufficient to cause the solution to crystallize in a HgCdTe layer on the CdTe substrate.

Claim 7

The method of claim 4, wherein step (b) further comprises (b) flowing an inert gas at approximately 200 psi through the container to reduce the vaporization of Hg from the solution.

Claim 8

The method of claim 5, wherein step (d) further comprises: (d) reacting the Hg and Cd with the Te in the solution by maintaining the solution at approximately 700° C. for approximately one hour.

Claim 9

The method of claim 6, wherein step (e) further comprises (e) reducing the temperature of the solution to approximately 550° C.; and step g) further comprises (g) maintaining the solution temperature at approximately 550° C. for approximately 15 seconds to melt back the substrate and eliminate a Hg vapor diffused layer.

Claim 10

The method of claim 7, wherein step (i) further comprises (i) reducing the temperature of the solution at a rate of approximately 0.25° C./min to cause the solution to crystallize in a HgCdTe layer on the CdTe substrate.

Claim 11

A semi-open method for growing an epitaxial HgCdTe layer on a CdTe substrate, comprising the steps of: (a) placing the CdTe substrate and a growth solution of Hg, Cd, and Te within a pressure and temperature controlled container; (b) flowing an inert gas at approximately 200 psi through the container to reduce the vaporization of Hg from the solution; (c) establishing a cooling zone within the container to condense Hg vaporized from the solution; (d) reacting the Hg and Cd with the Te in the solution by maintaining the solution at approximately 700° C. for approximately one hour; (e) reducing the temperature of the solution to approximately 550° C.; (f) establishing contact between the solution and the substrate; (g) maintaining the solution temperature at approximately 550° C. for approximately 15 seconds to melt back the substrate and eliminate a Hg vapor diffused layer; (h) reducing the temperature of the solution to the saturation temperature of approximately 500° C.; and (i) reducing the temperature of the solution at a rate of approximately 0.25° C./min to cause the solution to crystallize in a HgCdTe layer on the CdTe substrate.

Claim 12

A semi-open method for growing an epitaxial HgCdTe layer on a CdTe substrate, comprising the steps of: (a) placing the CdTe substrate and a growth solution of Hg, Cd, and Te within a pressure and temperature controlled container; (b) flowing an inert gas at approximately 200 psi through the container to reduce the vaporization of Hg from the solution; (c) establishing a cooling zone within the container to condense Hg vaporized from the solution; (d) reacting the Hg and Cd with the Te in the solution by maintaining the solution at approximately 700° C. for approximately one hour; (e) reducing the temperature of the solution to approximately 550° C.; (f) establishing contact between the solution and the substrate; (g) maintaining the solution temperature at approximately 550° C. for approximately 15 seconds to melt back the substrate and eliminate a Hg vapor diffused layer; (h) reducing the temperature of the solution to the saturation temperature of approximately 500° C.; and (i) reducing the temperature of the solution at a rate of approximately 0.25° C./min to cause the solution to crystallize in a HgCdTe layer on the CdTe substrate.

Claim 13

The method of claim 9, wherein step (i) further comprises (i) reducing the temperature of the solution at a rate of approximately 0.25° C./min to cause the solution to crystallize in a HgCdTe layer on a (111) Cd surface of the CdTe substrate.