US4258080A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of lowering resistivity of metal oxide semiconductor powder
Assignee: Panasonic Holdings Corp
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Filing: 1978-11-07
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Granted: 1981-03-24
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Expires: 1998-11-07
Abstract
Abstract The resistivity of an n-type metal oxide semiconductor such as SnO2, In2O3 or ZnO is lowered by treating the metal oxide with a metal halide such as SnX2 or SbX3, in which the oxidation number of the metal is smaller than the largest oxidation number the metal can take, so as to allow the metal oxide to generally uniformly come into contact with the metal halide. The treatment can be done at room temperature by, for example, the use of a solution of the metal halide and does not cause discoloration of the treated metal oxide. This process is applicable also to a conductive material comprising as its essential component at least one n-type metal oxide semiconductor.
Inventors
- 👤 Nobuo Sonoda
- 👤 Wataru Shimotsuma
- 👤 Yoshio Kishimoto
- 👤 Yoichi Sekine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 05:34
CPC Classifications
H; H01; H01B; H01B1/00; H01B1/06; H01B1/08; H10; H10N; H10N70/00
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
128 words
A method of lowering the resistivity of an n-type metal oxide semiconductor, the metal oxide semiconductor being the oxide of a single metal element, being selected from the group consisting of tin dioxide, diindium trioxide and zinc oxide, and being in the form of a fine powder; said method comprising the step of treating the metal oxide semiconductor with an aqueous solution of a metal halide selected from the group consisting of stannous halides and antimony trihalides, in which metal halide the oxidation number of the metal is smaller than the largest oxidation number the metal can take, at a temperature below the thermal decomposition temperature of the metal halide so as to allow the metal oxide semiconductor to generally uniformly come into contact with the metal halide.
Claim 2
Independent Claim
128 words
A method of lowering the resistivity of an n-type metal oxide semiconductor, the metal oxide semiconductor being the oxide of a single metal element, being selected from the group consisting of tin dioxide, diindium trioxide and zinc oxide, and being in the form of a fine powder; said method comprising the step of treating the metal oxide semiconductor with an aqueous solution of a metal halide selected from the group consisting of stannous halides and antimony trihalides, in which metal halide the oxidation number of the metal is smaller than the largest oxidation number the metal can take, at a temperature below the thermal decomposition temperature of the metal halide so as to allow the metal oxide semiconductor to generally uniformly come into contact with the metal halide.
Claim 3
Dependent Claim
31 words
A method as claimed in claim 1, wherein the treatment of the metal oxide semiconductor comprises the step of wetting the metal oxide semiconductor with a solution of the metal halide.
Claim 4
Dependent Claim
27 words
A method as claimed in claim 2, wherein the treatment of the metal oxide semiconductor comprises the step of immersing the metal oxide semiconductor in said solution.
Claim 5
Dependent Claim
27 words
A method as claimed in claim 2, wherein the treatment of the metal oxide semiconductor comprises the step of spraying said solution onto the metal oxide semiconductor.
Claim 6
Independent Claim
137 words
A method of lowering the resistivity of a conductive material which comprises as its fundamental component at least one n-type metal oxide semiconductor, the metal oxide semiconductor being the oxide of a single metal element, being selected from the group consisting of tin dioxide, diindium trioxide and zinc oxide, and being in the form of a fine powder; the method comprising the step of treating the conductive material with an aqueous solution of a metal halide selected from the group consisting of stannous halides and antimony trihalides, in which metal halide the oxidation number of the metal is smaller than the largest oxidation number the metal can take, at a temperature below the thermal decomposition temperature of the metal halide so as to allow the conductive material to generally uniformly come into contact with the metal halide.
Claim 7
Independent Claim
137 words
A method of lowering the resistivity of a conductive material which comprises as its fundamental component at least one n-type metal oxide semiconductor, the metal oxide semiconductor being the oxide of a single metal element, being selected from the group consisting of tin dioxide, diindium trioxide and zinc oxide, and being in the form of a fine powder; the method comprising the step of treating the conductive material with an aqueous solution of a metal halide selected from the group consisting of stannous halides and antimony trihalides, in which metal halide the oxidation number of the metal is smaller than the largest oxidation number the metal can take, at a temperature below the thermal decomposition temperature of the metal halide so as to allow the conductive material to generally uniformly come into contact with the metal halide.
Claim 8
Dependent Claim
33 words
A method as claimed in claim 5, wherein the treatment of the conductive material with the metal halide comprises the step of wetting the conductive material with a solution of the metal halide.
Claim 9
Dependent Claim
40 words
A method as claimed in claim 5, wherein the conductive material comprises at least one n-type oxide semiconductor which is doped with a metal element different in valence from the metal of the metal oxide semiconductor subjected to the doping.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-23 | 1984-09-22 | 1985-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-23 | 1988-09-22 | 1989-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-23 | 1992-09-22 | 1993-03-24 | $7700.00 | Window Closed / Lapsed |