US4255206A
Expired / Lapsed
US
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Method for manufacturing a semiconductor structure
Assignee: Siemens AG
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Filing: 1978-12-18
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Granted: 1981-03-10
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Expires: 1998-12-18
Abstract
Abstract A method for manufacturing a semiconductor structure, especially for optoelectronic components, in which, at least one layer of a further semiconductor compound is deposited epitaxially on a substrate of a semiconductor compound. The surface of the substrate is provided with a multiplicity of bevelled structures of the further semiconductor compound. Prior to deposition, the surface of the substrate is provided with a multiplicity of mesas in a predetermined distribution, from each of which a bevelled structure is then generated. The plane and fault-free crystal surface of the bevels is preserved when further layers are deposited. The method is especially well suited for the manufacture of optoelectronic and microwave components.
Inventors
- 👤 Wolfgang Endler
- 👤 Karl-Heinz Zschauer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824; H10P14/2924; H10P14/2925; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
180 words
A method of manufacturing an array of subcomponents intended for subsequent processing and division into individual semiconductor components each having a single mesa of semiconductor material on the flat surface of which a thin layer of semiconducting material of uniform thickness, substantially free of crystal faults, has been formed, comprising the steps of: removing portions of the surface of a single-crystalline semiconductor substrate, which surface lies approximately parallel to a single-crystal face of the substrate, in a grid-like pattern to form a plurality of plane-topped mesas the superficial extent of the top of each of which is not greater than 1.2 mm in diameter, in the case of circular structures, and along a side, in the case of straight sided structures, etching the entire surface of the substrate including the mesas, depositing, by means of liquid-phase epitaxy from a solution of semiconductor compound the supersaturation of which is not more than 3% at the start of deposition, a semiconductor layer on the entire etched surface, the layer being approximately 1 μm in thickness on the plane-topped surface of the mesa.
Claim 2
Independent Claim
180 words
A method of manufacturing an array of subcomponents intended for subsequent processing and division into individual semiconductor components each having a single mesa of semiconductor material on the flat surface of which a thin layer of semiconducting material of uniform thickness, substantially free of crystal faults, has been formed, comprising the steps of: removing portions of the surface of a single-crystalline semiconductor substrate, which surface lies approximately parallel to a single-crystal face of the substrate, in a grid-like pattern to form a plurality of plane-topped mesas the superficial extent of the top of each of which is not greater than 1.2 mm in diameter, in the case of circular structures, and along a side, in the case of straight sided structures, etching the entire surface of the substrate including the mesas, depositing, by means of liquid-phase epitaxy from a solution of semiconductor compound the supersaturation of which is not more than 3% at the start of deposition, a semiconductor layer on the entire etched surface, the layer being approximately 1 μm in thickness on the plane-topped surface of the mesa.
Claim 3
Dependent Claim
35 words
The method of claim 1 in which deposition is made from a solution of the semiconductor compound, the supersaturation of which, at the start of the deposition at the phase boundary, is at most 1%.
Claim 4
Dependent Claim
35 words
The method of claim 1 in which deposition is made from a solution of the semiconductor compound, the supersaturation of which, at the start of the deposition at the phase boundary, is at most 0.3%.
Claim 5
Dependent Claim
17 words
The method in accordance with claim 1 in which the cooling rate is at most 1° K./min.
Claim 6
Dependent Claim
16 words
The method in accordance with claim 1 in which the cooling rate is about 0.3° K./min.
Claim 7
Dependent Claim
28 words
The method of claim 1 further comprising the step of: dividing the substrate and the deposited semi-conductor layer into semi-conductor components each of which has only one mesa.
Claim 8
Independent Claim
33 words
The method in accordance with one of the claims 1, 2, 3, 4, or 5 in which the superficial extent of the top of each plane-topped mesa is between 200 and 500 micrometers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-09 | 1984-09-08 | 1985-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-09 | 1988-09-08 | 1989-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-09 | 1992-09-08 | 1993-03-10 | $7700.00 | Window Closed / Lapsed |