Semi-conductor arrangement

Claim 2

In a semi-conductor field effect device including a semi-conductor body of a first conductivity type having a source region and a plurality of drain regions formed therein so as to define a current carrying channel region between said source and said drain regions, the improvement comprising means, including at least two edge layers disposed on opposite sides of said channel region, for producing a trough shaped potential curve having a defined minimum point in said current carrying channel in a direction transverse to the direction of carrier flow by superposition of potential curve emanating from said edge layers, whereby triggering of a selected one of said drain regions is possible by shifting said minimum point of said potential curve in said direction transverse to said carrier flow.

Claim 3

A semi-conductor device as defined in claim 1, wherein said at least two edge layers produce potential curves which extend into the channel region in the currentless condition for the purpose of forming thermal equilibrium.

Claim 4

A semi-conductor device as defined in claim 2, wherein said edge layers comprise rectifying metal semi-conductor junctions, pn junctions or semi-conductor insulator junctions.

Claim 5

A semi-conductor device as defined in claim 2 and including outer regions bordering said edge layers comprising Schottky metal contacts, semiconductor regions of the opposite type of conduction to said regions or insulating layers having connecting contacts for supplying control and bias voltages.

Claim 6

A semi-conductor device as defined in claim 2, wherein the width of said channel region between said edge layers or the space charge regions starting from them is such that said trough shaped potential curve having a defined minimum point is produced by superimposition of said potential curves produced by said edge layers in the currentless state in said current carrying channel transverse to said direction of said carrier flow.

Claim 7

A semi-conductor device as defined in claim 5, wherein said width of said current carrying channel is less than 10 Deybe lengths in said direction transverse to the carrier flow.

Claim 8

A semi-conductor device as defined in claim 1, wherein said channel region is n doped and has an impurity concentration of 10 15 to 10 16 atoms/cm 3 .

Claim 9

A semi-conductor device as defined in claim 1, wherein said channel region is located between two pairs of said oppositely disposed edge layers each having exterior control contacts which are arranged such that the direction of displacement for the carrier current produced by one pair of said edge layers deviates from the direction of displacement which can be achieved by the other pair of said edge layers.

Claim 10

A semi-conductor device as defined in claim 8, wherein said plurality of drain regions are arranged at the end of said channel in a plane perpendicular to the direction of propagation of the carrier current.

Claim 11

A semi-conductor device as defined in claim 9, wherein said drain regions comprise light emitting regions for producing a micro display.

Claim 12

A semi-conductor device as defined in claim 8, wherein the directions of displacement of said carrier current by said two edge layer pairs run approximately perpendicular to each other.

Claim 13

A semi-conductor device as defined in claim 1, wherein said means for producing further includes means for supplying direct voltage potentials of the same polarity to both said edge layers to produce space charge regions extending into said channel region between said edge layers and with said direct voltage potentials being selected such that said space charge regions will not completely constrict said channel region and so that a current carrying channel having a width, in which said trough shaped potential curve having said defined minimum point occurs, remains between said space charge regions; and further comprising means for superimposing an alternating voltage signal potential onto the direct voltage potential prevailing at said two edge layers in contra phase so that the minimum point of said trough shaped potential curve is pushed backwards and forwards transversely to the direction of said carrier current at the signal frequency by said alternating voltage signals potential and said drain regions are triggered alternately.

Claim 14

A semi-conductor device as defined in claim 1 wherein said means for producing further includes means for applying selected direct voltage potentials to said edge layers to produce said potential curves emanating from said edge layers.

Claim 15

A semi-conductor device as defined in claim 1 further including means for applying selected potentials to said edge layers for shifting and minimum point of said potential curve in said direction transverse to said carrier flow to trigger selective ones of said drain regions.

Claim 16

A semi-conductor device as defined in claim 1 wherein said plurality of drain regions are disposed in a plane perpendicular to the direction of propagation of said carrier current, and parallel to the plane of said trough shaped potential curve.