Method of growing metal halide and chalcogenide crystals for use as infrared windows

Claim 2

A process for growing monocrystalline optical materials having substantially parallel uncut major surfaces, comprising the steps of: (a) providing a container with a volume which is bounded in part at least by two substantially parallel planes which correspond to said major surface of material to be grown; (b) depositing a polycrystalline material in said container; (c) melting said polycrystalline material in a controlled temperature zone; (d) introducing a coolant into the lower end of said container whereby the temperature of said molten material is lowered to its crystallization point and a solid liquid interface is established; (e) moving said interface along one dimension of said polycrystalline melt to cause recrystallization of said melt along said parallel planes and thereby convert said melt to monocrystalline material whereby the ratio of the surface area of said major surface to the volume of the grown monocrystalline material boule is maximized.

Claim 3

The process of claim 1 including the additional steps of: (a) purging said container containing said molten polycrystalline charge with a reactive atmospheric gas while creating said controlled temperature zone; (b) maintaining said reactive atmosphere purge throughout said process and allowing said monocrystalline material to cool to ambient temperatures.

Claim 4

A process for fabricating single crystal infrared window components having substantially parallel uncut major surfaces comprising: (a) providing a container with a volume which is bounded in part at least by two substantially parallel planes which correspond to said major surfaces of material to be grown; (b) depositing a polycrystalline material in said container; (c) melting said polycrystalline material in a controlled temperature zone; (d) introducing a coolant into the lower end of said container whereby the temperature of said molten material is lowered to its crystallization point and a solid liquid interface is established; (e) moving said interface along one dimension of said melt to cause recrystallization of said melt along said parallel planes and thereby convert said melt to monocrystalline material whereby the ratio of the surface area of said major surface to the volume of the grown monocrystalline material boule is maximized; and (f) removing unwanted material from said crystal by cutting said crystal boule along its minor axis.

Claim 5

A process for fabricating single crystal infrared window components having substantially parallel uncut major surfaces comprising: (a) providing a container with a volume which is bounded in part at least by two substantially parallel planes which correspond to said major surfaces of material to be grown; (b) depositing a polycrystalline material in said container; (c) melting said polycrystalline material in a controlled temperature zone; (d) introducing a coolant into the lower end of said container whereby the temperature of said molten material is lowered to its crystallization point and a solid liquid interface is established; (e) moving said interface along one dimension of said melt to cause recrystallization of said melt along said parallel planes and thereby convert said melt to monocrystalline material whereby the ratio of the surface area of said major surface to the volume of the grown monocrystalline material boule is maximized; and (f) removing unwanted material from said crystal by cutting said crystal boule along its minor axis.

Claim 6

In the art of growing large metal halide single crystals, an improved crystal growth process comprising the placing of metal halide charge powders into a crystal growth crucible having a rectangular cross-section, placing said charged crucible into a furnace having at least two vertical flat plate heating elements baffled from convection by an insulation material, causing said metal halide charge to become molten by raising the temperature of said furnace, initiating crystal nucleation within said molten halide by introducing a coolant into said crucible whereby the temperature of said halide is lowered below its melting point, creating a moving thermal gradient through said crucible by causing said crucible to be removed from said furnace thereby allowing a single crystal to be formed within said crucible, and allowing said single crystal to cool prior to its removal from said crucible.

Claim 7

In the art of growing large metal halide single crystals, an improved crystal growth process comprising the placing of metal halide charge powders into a crystal growth crucible having a rectangular cross-section, placing said charged crucible into a furnace having at least two vertical flat plate heating elements baffled from convection by an insulation material, causing said metal halide charge to become molten by raising the temperature of said furnace, initiating crystal nucleation within said molten halide by introducing a coolant into said crucible whereby the temperature of said halide is lowered below its melting point, creating a moving thermal gradient through said crucible by causing said crucible to be removed from said furnace thereby allowing a single crystal to be formed within said crucible, and allowing said single crystal to cool prior to its removal from said crucible.

Claim 8

The process of claim 4 wherein said crucible is comprised of a rectangular cross-section affixed to a stem having a coolant inlet and outlet, and an inlet and outlet means for the introduction of and removal of gases from said crucible.

Claim 9

The process improvement of claim 4 wherein said molten halide is subjected to the cleansing action of a dynamic reactive atmospheric processing agent introduced into said crucible prior to the introduction of said coolant into said crucible and removal of said crucible from said furnace.