High current press pack semiconductor device having a mesa structure

Claim 1

Press pack semiconductor device comprising: (a) a semiconductor element having two main surfaces, at least one mesa formed on one of the main surfaces, a first electrode formed on the top of said mesa, a second electrode formed on the bottom of said mesa, and a third electrode formed on the other main surface; (b) a supporting plate fixed to said third electrode; (c) a first intermediate plate attached to the surface of said first electrode and a second intermediate plate interposed between said first intermediate plate and first disc, the thickness of said first intermediate plate being equal to or less than half of the ditch width of said mesa; (d) said first disc and a second disc respectively electrically connected through said first intermediate plate to said first electrode and through said supporting plate to said third electrode; (e) an insulating housing surrounding said semiconductor element; (f) a flange section disposed in an external portion of said housing; and (g) a lead for electrically connecting together said second electrode and said flange section.