US4246064A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Double crucible crystal growing process
Assignee: AT&T Inc
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Filing: 1979-07-02
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Granted: 1981-01-20
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Expires: 1999-07-02
Abstract
Abstract The disclosure is directed to a double crucible Czochralski crystal semiconductor growing apparatus (10). An inner crucible (14) floats in a melt within an outer crucible (13) and a single crystal semiconductor billet (23) is pulled from the melt (16) in the inner crucible. An elongated tubular member (26), having at least one small aperture (33) in the wall thereof, provides a channel between the outer and inner crucibles. The tubular member (26) permits flow of the melt in the outer crucible (14) to the inner crucible (13) while inhibiting the diffusion of dopant material from the inner to outer crucible while any gas in the member will pass through the aperture (33).
Inventors
- 👤 Thomas J. Dewees
- 👤 John S. Fangman
- 👤 Wen Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:51
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/10; C30B15/12
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
85 words
A method of growing a single crystal semiconductor billet from a melt in a first crucible, which melt is replenished by a melt in a second crucible via an elongated communicating channel of such a length as to inhibit back diffusion of the melt therethrough, the method is characterized by: permitting any gas in the channel to pass through at least one small aperture in the channel wall into the first and/or second crucibles; while substantially precluding the flow of the melt through said aperture.
Claim 2
Independent Claim
85 words
A method of growing a single crystal semiconductor billet from a melt in a first crucible, which melt is replenished by a melt in a second crucible via an elongated communicating channel of such a length as to inhibit back diffusion of the melt therethrough, the method is characterized by: permitting any gas in the channel to pass through at least one small aperture in the channel wall into the first and/or second crucibles; while substantially precluding the flow of the melt through said aperture.
Claim 3
Dependent Claim
38 words
The method as set forth in claim 1, wherein: the semiconductor melt is silicon, and the elongated communication channel is a quartz tube with the small aperture in the wall thereof having a diameter of approximately 0.3 mm.
Claim 4
Independent Claim
45 words
The method as set forth in claims 1 or 2, wherein the melt in the first crucible is replenished by the melt in the second crucible via a plurality of elongated communicating channels, each channel having at least one small aperture in the wall thereof.
References Cited (Backward Citations)
CA551638A
Cited
US2944875A
Cited
US3025191A
Cited
US2892739A
Cited
US3305485A
Cited
US3637439A
Cited
US4036595A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-01-20 | 1984-07-21 | 1985-01-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-01-20 | 1988-07-21 | 1989-01-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-01-20 | 1992-07-21 | 1993-01-20 | $7700.00 | Window Closed / Lapsed |