US4242690A
Expired / Lapsed
US
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High breakdown voltage semiconductor device
Assignee: General Electric Co
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Filing: 1978-06-06
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Granted: 1980-12-30
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Expires: 1998-06-06
Abstract
Abstract A precisely formed region of semiconductor material which correspondingly contains a precisely controlled amount of charge when depleted is provided in the proximity of a p-n junction in several kinds of semiconductor devices. This region is located within the selected semiconductor device in such a manner as to increase avalanche breakdown voltage of a p-n junction to near its ideal value and to reduce both peak bulk and peak surface electric fields.
Inventors
- 👤 Victor A. K. Temple
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 17:16
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/104; H10D62/105; H10D62/106
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
239 words
In a semiconductor device containing at least one p-n junction including a first region of semiconductor material of a selected conductivity type having top and bottom surfaces, a second region of semiconductor material of conductivity type opposite that of said first region and having upper and lower surfaces, the lower surface of said second region being coextensive and contiguous with the top surface of said first region, a p-n junction located between said first and second regions, said first and second regions including a common edge side surface, a portion of said common edge side surface being beveled so as to pass through the entire thickness of said second region and a portion of the thickness of said first region, said beveled surface being oriented at a small acute angle with respect to the plane of said p-n junction, and a junction termination located at the intersection of said p-n junction with said beveled surface, the improvement comprising: a junction extension region of semiconductor material of the same conductivity type of said second region, said junction extension region having a greater length than thickness, said junction extension region having a length less than the length of said beveled surface and being located in the proximity of said beveled surface and oriented approximately parallel thereto, a substantial portion of said junction extension region being located within said first region and oriented generally parallel to the plane of said junction termination.
Claim 2
Dependent Claim
239 words
In a semiconductor device containing at least one p-n junction including a first region of semiconductor material of a selected conductivity type having top and bottom surfaces, a second region of semiconductor material of conductivity type opposite that of said first region and having upper and lower surfaces, the lower surface of said second region being coextensive and contiguous with the top surface of said first region, a p-n junction located between said first and second regions, said first and second regions including a common edge side surface, a portion of said common edge side surface being beveled so as to pass through the entire thickness of said second region and a portion of the thickness of said first region, said beveled surface being oriented at a small acute angle with respect to the plane of said p-n junction, and a junction termination located at the intersection of said p-n junction with said beveled surface, the improvement comprising: a junction extension region of semiconductor material of the same conductivity type of said second region, said junction extension region having a greater length than thickness, said junction extension region having a length less than the length of said beveled surface and being located in the proximity of said beveled surface and oriented approximately parallel thereto, a substantial portion of said junction extension region being located within said first region and oriented generally parallel to the plane of said junction termination.
Claim 3
Dependent Claim
74 words
The semiconductor device of claim 1 wherein Q JER represents the amount of charge per unit area in said junction extension region when fully depleted and Q id is the amount of charge per unit area present in the depletion region of an ideal junction when the ideal breakdown voltage is applied to the junction, Q JER having a value within the range of approximately 0.2 Q id to approximately 1.5 Q id .
Claim 4
Dependent Claim
69 words
The semiconductor device of claim 2 wherein W JER represents the length of the portion of said junction extension region included within the first region and W id is the depletion width of the lightly doped side of an ideal p-n junction while the ideal junction breakdown voltage is applied thereto, W JER having a value within the range of approximately 1/2 W id to 2 W id .
Claim 5
Dependent Claim
22 words
The semiconductor device of claim 3 wherein said small acute angle is within the range of approximately 2 degrees to 12 degrees.
Claim 6
Dependent Claim
32 words
The semiconductor device of claim 3 wherein said junction extension region is located within said first region below said beveled surface, a portion of said junction extension region abutting said p-n junction.
Claim 7
Dependent Claim
35 words
The semiconductor device of claim 3 wherein said junction extension region is further situated below said beveled surface in said first region, with a portion of said junction extension region overlapping into said second region.
Claim 8
Dependent Claim
21 words
The semiconductor device of claim 3 wherein said junction extension region is situated in said first region below said beveled surface.
Claim 9
Dependent Claim
36 words
The semiconductor device of claim 3 wherein said junction extension region is situated in said first region below and in contact with said beveled surface, a portion of said junction extension region abutting said junction termination.
Claim 10
Dependent Claim
43 words
The semiconductor device of claim 3 wherein said junction extension region is situated in said first region with a portion of said junction extension region overlapping into said second region, said junction extension region located below and in contact with said beveled surface.
Claim 11
Dependent Claim
25 words
The semiconductor device of claim 3 wherein said junction extension region is situated within said first region below and in contact with said beveled surface.
Claim 12
Dependent Claim
232 words
In a semiconductor device containing at least one p-n junction including a first region of semiconductor material of a selected conductivity type having top and bottom surfaces, a second region of semiconductor material of conductivity type opposite that of said first region and having upper and lower surfaces, the lower surface of said second region being coextensive and contiguous with the top surface of said first region, a p-n junction located between said first and second regions, said first and second regions including a common edge side surface, a portion of said common edge side surface being beveled so as to pass through the entire thickness of said second region and a portion of the thickness of said first region, said beveled surface being oriented at a small acute angle with respect to the plane of said p-n junction, and a junction termination located at the intersection of said p-n junction with said beveled surface, the improvement comprising: a junction extension region of semiconductor material of the same conductivity type of said second region, said junction extension region having a greater length than thickness, said junction extension region having a length less than the length of said beveled surface and being situated upon of said beveled surface and oriented approximately parallel thereto, a substantial portion of said junction extension region overlapping the portion of said beveled surface bounding on said first region.
Claim 13
Dependent Claim
232 words
In a semiconductor device containing at least one p-n junction including a first region of semiconductor material of a selected conductivity type having top and bottom surfaces, a second region of semiconductor material of conductivity type opposite that of said first region and having upper and lower surfaces, the lower surface of said second region being coextensive and contiguous with the top surface of said first region, a p-n junction located between said first and second regions, said first and second regions including a common edge side surface, a portion of said common edge side surface being beveled so as to pass through the entire thickness of said second region and a portion of the thickness of said first region, said beveled surface being oriented at a small acute angle with respect to the plane of said p-n junction, and a junction termination located at the intersection of said p-n junction with said beveled surface, the improvement comprising: a junction extension region of semiconductor material of the same conductivity type of said second region, said junction extension region having a greater length than thickness, said junction extension region having a length less than the length of said beveled surface and being situated upon of said beveled surface and oriented approximately parallel thereto, a substantial portion of said junction extension region overlapping the portion of said beveled surface bounding on said first region.
Claim 14
Dependent Claim
74 words
The semiconductor device of claim 10 wherein Q JER represents the amount of charge per unit area in said junction extension region when fully depleted and Q id is the amount of charge per unit area present in the depletion region of an ideal junction when the ideal breakdown voltage is applied to the junction, Q JER having a value within the range of approximately 0.2 Q id to approximately 1.5 Q id .
Claim 15
Dependent Claim
69 words
The semiconductor device of claim 11 wherein W JER represents the length of the portion of said junction extension region included within the first region and W id is the depletion width of the lightly doped side of an ideal p-n junction while the ideal junction breakdown voltage is applied thereto, W JER having a value within the range of approximately 1/2 W id to 2 W id .
Claim 16
Dependent Claim
34 words
The semiconductor device of claim 12 wherein said junction extension region overlays a portion of the beveled surface bounding on said first region, a portion of said junction extension region abutting said junction termination.
Claim 17
Dependent Claim
25 words
The semiconductor device of claim 12 wherein said junction extension region overlays a portion of said beveled surface bounding on said first and second regions.
Claim 18
Dependent Claim
25 words
The semiconductor device of claim 12 wherein said junction extension region is situated overlaying a portion of said beveled surface bounding on said first region.
Claim 19
Dependent Claim
18 words
The semiconductor device of claims 13, 14 or 15 wherein said junction extension region comprises an epitaxial layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-12-30 | 1984-06-30 | 1984-12-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-12-30 | 1988-06-30 | 1988-12-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-12-30 | 1992-06-30 | 1992-12-30 | $7700.00 | Window Closed / Lapsed |