Bipolar transistor stabilization structure

Claim 1

A transistor structure having a semiconductive body comprising: a collector region of one conductivity type; a base region located within a portion of the collector region, the base region having an active portion and a nonactive portion which are both of the opposite conductivity type of the collector region; an emitter region of the one conductivity type located within a portion of the base region; base contact means for providing low resistance electrical contact to the base region; means for avoiding conditional stability when the transistor is operated in a circuit, the means including a first region of the one conductivity type but of a higher impurity concentration than the collector region; the first region being in contact with the nonactive portion of the base region, spaced apart from the base contact means, and electrically coupled to the collector region to form a compensating network comprising an equivalent resistance and capacitance serially coupled between the base contact means and the collector region; the resistance and capacitance having suitable values to stabilize the circuit, the values of the resistance and capacitance being substantially determined by the resistivity and/or geometry of the nonactive portion of the base region, the impurity concentration of the first region and/or the contact area between the first region and the nonactive portion of the base region.