US4233645A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor package with improved conduction cooling structure
Assignee: International Business Machines Corp
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Filing: 1978-10-02
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Granted: 1980-11-11
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Expires: 1998-10-02
Abstract
Abstract A semiconductor device package having a substrate, one or more semiconductor devices mounted on the top surface of the substrate, a heat sink having a surface in opposed spaced parallel relation to the top surface of the substrate, and at least one deformable heat transfer member positioned between a device mounted on the top surface of the substrate, and the surface of the heat sink. The heat transfer member is comprised of a porous block of material, and a heat conductive non-volatile liquid retained within the block of material by a surface tension. The heat transfer member being operative to transfer heat from the device to the heat sink.
Inventors
- 👤 Demetrios Balderes
- 👤 John R. Lynch
- 👤 Robert A. Yacavonis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:10
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/257; H10W40/70; H10W40/77; H10W40/774; H10W72/00; H10W72/851; H10W72/874; H10W72/877; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/736
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
115 words
In a semiconductor device package having a substrate, at least one semiconductor device mounted on the top surface of the substrate, a heat sink having a surface in spaced relation to the top surface of the substrate, the improvement comprising, at least one heat transfer member positioned between said device and said surface of said heat sink, said heat transfer member comprised of a porous block of material, and a heat conductive non-volatile low viscosity, high surface tension, liquid permanently retained within said block of material and in contact with said device by capillary action, said heat transfer member operative to transfer heat by conduction from said device to said heat sink without changing phase.
Claim 2
Dependent Claim
115 words
In a semiconductor device package having a substrate, at least one semiconductor device mounted on the top surface of the substrate, a heat sink having a surface in spaced relation to the top surface of the substrate, the improvement comprising, at least one heat transfer member positioned between said device and said surface of said heat sink, said heat transfer member comprised of a porous block of material, and a heat conductive non-volatile low viscosity, high surface tension, liquid permanently retained within said block of material and in contact with said device by capillary action, said heat transfer member operative to transfer heat by conduction from said device to said heat sink without changing phase.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-11-11 | 1984-05-12 | 1984-11-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-11-11 | 1988-05-12 | 1988-11-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-11-11 | 1992-05-12 | 1992-11-11 | $7700.00 | Window Closed / Lapsed |