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US4232277A Expired / Lapsed US ⏱️ 0.0 years remaining

Microwave oscillator for microwave integrated circuit applications

Assignee: United States Department of the Army
•
Filing: 1979-03-09
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Granted: 1980-11-04
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Expires: 1999-03-09
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Abstract

Abstract Disclosed is a means for obtaining a high Q oscillator which is compact ands adapted to be readily incorporated into known forms of microwave integrated circuits, e.g. a parametric amplifier. The oscillator which for example may comprise a pump oscillator for a parametric amplifier includes efficient means for coupling to microstrip without destroying the high Q of the oscillator circuit. The negative resistance elements which may be, for example, a Gunn diode, IMPATT diode or the like is located in a resonator cavity which is a combination of radial transmission line cavity and a rectangular waveguide cavity.

Inventors

  • 👤 Lawrence E. Dickens
  • 👤 Douglas W. Maki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 18:42
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12; H03B9/14; H03B2009/126

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 246 words
A microwave oscillator utilizing a semiconductor negative resistive device and being particularly adapted for microwave integrated circuit applications such as the pump oscillator for a parametric amplifier comprising, in combination: a metal body in the form of a planar substrate configuration having resonator cavity means formed therein and having a surface over which is formed a microstrip ground plane, said metal body additionally having a bore therein extending to said resonator cavity means; a mounting base including a semiconductor assembly, including a semiconductor device adapted to operate as a negative resistive element mounted on one end of said base and being inserted in said bore with said semiconductor assembly extending into said cavity means while said base is fastened to said metal body; wherein said cavity means includes a radial resonator cavity section formed by a metallic disc resonator element electrically coupled to and being secured to the top portion of said semiconductor assembly within said resonator cavity means; means included in said metal body and coupled to said semiconductor assembly for applying electrical power to said semiconductor device for operating said device as a negative resistance element; a non-metallic substrate formed on said metal body over said ground plane; a length of microstrip conductor formed on the outer surface of said non-metallic substrate extending from a region remote from the locality of said cavity means to a region proximate thereto; and means coupling microwave energy from said cavity means to said length of microstrip conductor.
Claim 2
Dependent Claim 246 words
A microwave oscillator utilizing a semiconductor negative resistive device and being particularly adapted for microwave integrated circuit applications such as the pump oscillator for a parametric amplifier comprising, in combination: a metal body in the form of a planar substrate configuration having resonator cavity means formed therein and having a surface over which is formed a microstrip ground plane, said metal body additionally having a bore therein extending to said resonator cavity means; a mounting base including a semiconductor assembly, including a semiconductor device adapted to operate as a negative resistive element mounted on one end of said base and being inserted in said bore with said semiconductor assembly extending into said cavity means while said base is fastened to said metal body; wherein said cavity means includes a radial resonator cavity section formed by a metallic disc resonator element electrically coupled to and being secured to the top portion of said semiconductor assembly within said resonator cavity means; means included in said metal body and coupled to said semiconductor assembly for applying electrical power to said semiconductor device for operating said device as a negative resistance element; a non-metallic substrate formed on said metal body over said ground plane; a length of microstrip conductor formed on the outer surface of said non-metallic substrate extending from a region remote from the locality of said cavity means to a region proximate thereto; and means coupling microwave energy from said cavity means to said length of microstrip conductor.
Claim 3
Dependent Claim 18 words
The microwave oscillator as defined by claim 1 wherein said cavity means additionally includes a stabilizing cavity section.
Claim 4
Dependent Claim 32 words
The microwave oscillator as defined by claim 2 wherein said radial resonator cavity section and said stabilizing cavity section are formed in one surface of said metal body beneath said ground plane.
Claim 5
Dependent Claim 32 words
The microwave oscillator as defined by claim 2 wherein said stabilizing cavity section is configured as an nλ/2 wavelength short circuited section of rectangular waveguide adapted for operation in a TE010N mode.
Claim 6
Dependent Claim 55 words
The microwave oscillator as defined by claim 4 wherein said radial resonator cavity section and said stabilizing cavity section adjoin one another and wherein said radial resonator cavity section is generally circular and said stabilizing cavity section is generally rectangular, having a lengthwise dimension of nλ/2 which extends away from said radial resonator cavity section.
Claim 7
Dependent Claim 48 words
The microwave oscillator as defined by claim 1 wherein said length of microstrip conductor extends to a region over said cavity means and wherein said microwave energy coupling means comprises a slot formed in said microstrip ground plane intermediate said cavity means and said length of microstrip conductor.
Claim 8
Dependent Claim 56 words
The microwave oscillator as defined by claim 1 wherein said length of microstrip conductor extends to a region over said cavity means and wherein said microwave energy coupling means comprises a metallic probe connected to said length of microstrip conductor extending through a hole formed in said microstrip ground plane and extending into said cavity means.
Claim 9
Dependent Claim 21 words
The microwave oscillator as defined by claim 7 wherein said coupling probe is centrally located over said metallic disc resonator element.
Claim 10
Dependent Claim 43 words
The microwave oscillator as defined by claim 7 wherein said cavity means is generally rectangular in configuration and wherein said radial resonator cavity section is centrally located in said generally rectangular configuration and said probe is offset from said metallic disc resonator element.
Claim 11
Dependent Claim 31 words
The microwave oscillator as defined by claim 9 wherein said generally rectangular configuration also includes a surrounding stabilizing cavity section configured as an nλ/2 wavelength short circuited section of rectangular waveguide.
Claim 12
Dependent Claim 46 words
The microwave oscillator as defined by claim 10 wherein said radial resonator cavity section and said stabilizing cavity section are integrally formed by connected non-removable and removable portions of said metal body and wherein said bore for said mounting base is located in the removable portion.
Claim 13
Dependent Claim 40 words
The microwave oscillator as defined by claim 11 wherein said non-removable portion is adapted to form the top wall of said cavity means while said removable portion is adapted to form the side and bottom walls of said cavity means.
Claim 14
Dependent Claim 63 words
The microwave oscillator as defined by claim 11 wherein said means for applying power to said semiconductor device includes a wire embedded in electrically lossy material located in said non-removable portion of said metal body and being operable to form a relatively high impedance choke circuit for circulating currents within said cavity and electrical circuit means for applying electrical power to said wire.
Claim 15
Dependent Claim 79 words
The microwave oscillator as defined by claim 1 wherein said means for applying electrical power to said semiconductor device comprises a channel in said body including electrically lossy potting material therein within which is located a length of electrical wire electrically connected to said metallic disc resonator element forming a relatively high impedance RF choke, and isolation circuit thereby, and means coupled to said length of electrical wire for applying a supply potential to said length of electrical wire.
Claim 16
Dependent Claim 16 words
The microwave oscillator as defined by claim 1 wherein said semiconductor device comprises a microwave diode.

References Cited (Backward Citations)

US3842360A Cited
US3868588A Cited
US3996529A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1983-11-04 1984-05-05 1984-11-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1987-11-04 1988-05-05 1988-11-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1991-11-04 1992-05-05 1992-11-04 $7700.00 Window Closed / Lapsed

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