US4231052A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for parallel-in to serial-out conversion
Assignee: UK Secretary of State for Defence
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Filing: 1978-11-02
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Granted: 1980-10-28
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Expires: 1998-11-02
Abstract
Abstract Apparatus for parallel-in to serial-out conversion comprises a strip of semiconductor material having electrical contacts at either end, and a detector near one end, sensitive to the local density of ambipolar carriers. Minority carriers (or ambipolar carriers) are injected into the strip at a number of parallel inputs and a spatial distribution of ambipolar carriers accumulated along the strip. The ambipolar carriers are swept to the detector when a pulse of current of suitable amplitude and duration is applied to the contacts. The parallel inputs may be in the form of diode diffusions to which electrical signals may be applied. Alternatively the inputs may be lateral extended portions of the strip and in these ambipolar carriers may be generated, for example, photoelectrically. Two-dimensional radiation detector arrays using the invention are also described.
Inventors
- 👤 Derek J. Day
- 👤 Charles T. Elliot
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 11:58
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10F39/193
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
122 words
A transfer device for converting information in parallel form to information in serial form comprising: a substrate of semiconductor material capable of sustaining spatial distribution of ambipolar carriers; first and second current electrodes formed on the subtrate a spaced distance apart; detector means situated between the current electrodes for detecting a parameter dependant upon a local density of ambipolar carriers when current is applied between the current electrodes, and the ambipolar carriers are caused to drift towards the detector means; and a plurality of inputs situated between the first current electrode and the detector means, for injecting information carriers into an active region of the subtrate between the electrodes, and for enabling thereby the accumulation of the spatial distribution of ambipolar carriers.
Claim 2
Dependent Claim
122 words
A transfer device for converting information in parallel form to information in serial form comprising: a substrate of semiconductor material capable of sustaining spatial distribution of ambipolar carriers; first and second current electrodes formed on the subtrate a spaced distance apart; detector means situated between the current electrodes for detecting a parameter dependant upon a local density of ambipolar carriers when current is applied between the current electrodes, and the ambipolar carriers are caused to drift towards the detector means; and a plurality of inputs situated between the first current electrode and the detector means, for injecting information carriers into an active region of the subtrate between the electrodes, and for enabling thereby the accumulation of the spatial distribution of ambipolar carriers.
Claim 3
Dependent Claim
33 words
A transfer device according to claim 1 wherein the plurality of inputs are provided by an array of diodes formed on the semiconductor material between the first current electrode and the detector means.
Claim 4
Dependent Claim
43 words
A transfer device according to claim 2 in combination with a plurality of discrete optical imaging detectors, the combination providing a hybrid detector array, each detector having an output electrically connected to a corresponding one of the input diodes of the transfer device.
Claim 5
Dependent Claim
44 words
A hybrid detector array according to claim 3 wherein the substrate of the transfer device is of 3 to 5 micron band type Cadmium Mercury Telluride material and the discrete detectors are adapted to detect infra-red radiation in the 8 to 14 micron band.
Claim 6
Dependent Claim
24 words
A hybrid detector array according to claim 4 wherein the detectors are fabricated of 8 to 14 micron band type Cadmium Mercury Telluride material.
Claim 7
Dependent Claim
50 words
A transfer device according to claim 1 wherein the substrate has a plurality of extended portions, each portion having associated therewith a pair of control electrodes by which means ambipolar carriers accumulated therein may be transferred to a common region of the device between the first and second current electrodes.
Claim 8
Dependent Claim
28 words
A transfer device according to claim 6 wherein the substrate and the extended portions thereof are of photoconductive material, so that ambipolar carriers may be generated photoelectrically therein.
Claim 9
Dependent Claim
15 words
A transfer device according to claim 7 wherein the material is of Cadmium Mercury Telluride.
Claim 10
Dependent Claim
19 words
A transfer device according to claim 1 wherein the detector means includes an output diode formed on the substrate.
Claim 11
Dependent Claim
37 words
A transfer device according to claim 1 wherein the detector means includes a third electrode spaced a distance apart from the second current electrode substantially twice the diffusion length of the ambipolar carriers in the semiconductor material.
References Cited (Backward Citations)
US3995159A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-10-28 | 1984-04-28 | 1984-10-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-10-28 | 1988-04-28 | 1988-10-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-10-28 | 1992-04-28 | 1992-10-28 | $7700.00 | Window Closed / Lapsed |