US4219608A
Expired / Lapsed
US
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Piezoelectric crystalline film of zinc oxide and method for making same
Assignee: Murata Manufacturing Co Ltd
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Filing: 1978-09-14
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Granted: 1980-08-26
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Expires: 1998-09-14
Abstract
Abstract Piezoelectric crystalline film on a substrate, which is a crystalline zinc oxide film with a c-axis substantially perpendicular to the substrate surface, the crystalline zinc oxide film containing, as an additive or additives, at least one element selected from the group of sulphur, selenium and tellurium. The piezoelectric crystalline films have high resistivity and a smooth surface, and make it possible to produce piezoelectric transducers with goal conversion efficiency. The piezoelectric crystalline films are made by sputtering zinc oxide and an additive onto a substrate from a film material source consisting essentially of a ceramic of zinc oxide containing at least one element of the group consisting of sulphur, selenium and tellurium.
Inventors
- 👤 Hiroshi Nishiyama
- 👤 Toshio Ogawa
- 👤 Tasuku Mashio
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:54
CPC Classifications
H; H10; H10N; H10N30/00; H10N30/01; H10N30/07; H10N30/074; H10N30/076; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31826; Y10T428/31855; Y10T428/31931
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
175 words
A method for making piezoelectric crystalline films comprising simultaneously sputtering zinc oxide and at least one additive element from a film material source onto a substrate to form a crystalline zinc oxide film with a hexagonal crystal structure and a c-axis substantially perpendicular to the substrate surface containing 0.01 to 20.0 atomic percent of at least one additive element selected from the group consisting of sulphur, selenium and tellurium, wherein said sputtering is effected by radio-frequency sputtering in an atmosphere of argon, or oxygen, or a mixture of argon and oxygen under a pressure of 1×10 -1 to 1×10 -4 Torr, and wherein said film material source consists essentially of a ceramic of zinc oxide containing 0.01 to 20.0 atomic percent of at least one additive element selected from the group consisting of sulphur, selenium and tellurium, said substrate being positioned on an anode placed in parallel with a cathode on which said film material source is positioned, said film material source being supplied with an electric power of 2 to 8 w/cm 2 .
Claim 2
Independent Claim
175 words
A method for making piezoelectric crystalline films comprising simultaneously sputtering zinc oxide and at least one additive element from a film material source onto a substrate to form a crystalline zinc oxide film with a hexagonal crystal structure and a c-axis substantially perpendicular to the substrate surface containing 0.01 to 20.0 atomic percent of at least one additive element selected from the group consisting of sulphur, selenium and tellurium, wherein said sputtering is effected by radio-frequency sputtering in an atmosphere of argon, or oxygen, or a mixture of argon and oxygen under a pressure of 1×10 -1 to 1×10 -4 Torr, and wherein said film material source consists essentially of a ceramic of zinc oxide containing 0.01 to 20.0 atomic percent of at least one additive element selected from the group consisting of sulphur, selenium and tellurium, said substrate being positioned on an anode placed in parallel with a cathode on which said film material source is positioned, said film material source being supplied with an electric power of 2 to 8 w/cm 2 .
Claim 3
Dependent Claim
30 words
The method for making piezoelectric crystalline films according to claim 1 wherein the substrate is maintained at a temperature in the range from 20° C. to 600° C. during sputtering.
Claim 4
Dependent Claim
45 words
A piezoelectric crystalline film disposed on a substrate, said film consisting essentially of a crystalline zinc oxide film with a hexagonal crystal structure and a c-axis substantially perpendicular to the substrate surface, said crystalline zinc oxide film containing 0.01 to 20.0 atomic percent of sulphur.
Claim 5
Dependent Claim
45 words
A piezoelectric crystalline film disposed on a substrate, said film consisting essentially of a crystalline zinc oxide film with a hexagonal crystal structure and a c-axis substantially perpendicular to the substrate surface, said crystalline zinc oxide film containing 0.01 to 20.0 atomic percent of sulphur.
Claim 6
Dependent Claim
45 words
A piezoelectric crystalline film disposed on a substrate, said film consisting essentially of a crystalline zinc oxide film with a hexagonal crystal structure and a c-axis substantially perpendicular to the substrate surface, said crystalline zinc oxide film containing 0.01 to 20.0 atomic percent of tellurium.
Claim 7
Dependent Claim
45 words
A piezoelectric crystalline film disposed on a substrate, said film consisting essentially of a crystalline zinc oxide film with a hexagonal crystal structure and a c-axis substantially perpendicular to the substrate surface, said crystalline zinc oxide film containing 0.01 to 20.0 atomic percent of tellurium.
Claim 8
Dependent Claim
31 words
The piezoelectric crystalline film of claims 3 or 4, wherein said substrate is made of a material selected from the group consisting of metal, glass, ceramics, single crystals, resins and rubber.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-08-26 | 1984-02-25 | 1984-08-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-08-26 | 1988-02-25 | 1988-08-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-08-26 | 1992-02-25 | 1992-08-26 | $7700.00 | Window Closed / Lapsed |