US4214252A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a MOS-capacitor
Assignee: US Philips Corp
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Filing: 1978-07-31
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Granted: 1980-07-22
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Expires: 1998-07-31
Abstract
Abstract A semiconductor element having a MOS-capacitor between a zone provided in an epitaxial layer on a substrate and a conductive layer on an insulating layer above the zone. The stray capacitance between the zone and the substrate of the opposite conductivity type is considerably reduced in that the zone in the semiconductor body is surrounded by a further zone of the opposite conductivity type. The further zone may be applied to a fixed potential via a connection electrode.
Inventors
- 👤 Joachim Goerth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:15
CPC Classifications
H; H03; H03B; H03B5/00; H03B5/30; H03B5/32; H03B5/36; H03B5/366; H03B5/368; H03J; H03J3/00; H03J3/02; H03J3/16; H03J3/18; H03J3/185; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D84/00; H10D84/201; H10D84/204; H10D84/212; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30; H03B2200/00; H03B2200/003; H03B2200/004
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
112 words
A semiconductor device comprising a semiconductor substrate of first conductivity type; a semiconductor layer of second conductivity type overlying said semiconductor substrate; an insulating layer on said semiconductor layer; a conductive layer formed on said insulating layer; a highly doped zone of said second conductivity type formed in the surface of said semiconductor layer; said highly doped zone, said insulating layer, and said conductive layer forming a MOS-capacitor; a further zone of said first conductivity type entirely surrounding said highly doped zone and interposed between said highly doped zone and said semiconductor layer; and a separate connection electrode at each of said highly doped zone, said further zone, and said semiconductor layer.
Claim 2
Dependent Claim
112 words
A semiconductor device comprising a semiconductor substrate of first conductivity type; a semiconductor layer of second conductivity type overlying said semiconductor substrate; an insulating layer on said semiconductor layer; a conductive layer formed on said insulating layer; a highly doped zone of said second conductivity type formed in the surface of said semiconductor layer; said highly doped zone, said insulating layer, and said conductive layer forming a MOS-capacitor; a further zone of said first conductivity type entirely surrounding said highly doped zone and interposed between said highly doped zone and said semiconductor layer; and a separate connection electrode at each of said highly doped zone, said further zone, and said semiconductor layer.
Claim 3
Dependent Claim
34 words
A semiconductor device according to claim 1, wherein the barrier capacitance between said semiconductor substrate and semiconductor layer is always reversed biased to the barrier capacitance between said highly doped zone and further zone.
Claim 4
Dependent Claim
30 words
A semiconductor device according to claim 1, wherein the barrier layer capacitance between said highly doped zone and said further zone is connected in parallel to an emitter follower transistor.
Claim 5
Dependent Claim
32 words
A semiconductor device according to claim 3, wherein high voltage is applied to said semiconductor layer so that a p-n junction between said semiconductor layer and said semiconductor substrate is reverse biased.
Claim 6
Dependent Claim
131 words
A semiconductor device comprising a semiconductor substrate of first conductivity type; a semiconductor layer of second conductivity type overlying said semiconductor substrate; an insulating layer on said semiconductor layer; a conductive layer formed on said insulating layer; a highly doped zone of said second conductivity type formed in the surface of said semiconductor layer; said highly doped zone, said insulating layer, and said conductive layer forming a MOS-capacitor; and a further zone of said first conductivity type entirely surrounding said highly doped zone and interposed between said highly doped zone and said semiconductor layer, wherein the barrier layer capacitance between said highly doped zone and said further zone is connected in parallel to an emitter follower transistor, and wherein said device forms a monolithic integrated circuit with said emitter follower transistor.
Claim 7
Dependent Claim
131 words
A semiconductor device comprising a semiconductor substrate of first conductivity type; a semiconductor layer of second conductivity type overlying said semiconductor substrate; an insulating layer on said semiconductor layer; a conductive layer formed on said insulating layer; a highly doped zone of said second conductivity type formed in the surface of said semiconductor layer; said highly doped zone, said insulating layer, and said conductive layer forming a MOS-capacitor; and a further zone of said first conductivity type entirely surrounding said highly doped zone and interposed between said highly doped zone and said semiconductor layer, wherein the barrier layer capacitance between said highly doped zone and said further zone is connected in parallel to an emitter follower transistor, and wherein said device forms a monolithic integrated circuit with said emitter follower transistor.
Claim 8
Dependent Claim
23 words
A semiconductor device according to claim 5, wherein voltage applied to said semiconductor layer is a maximum voltage occurring in said integrated circuit.
Claim 9
Dependent Claim
32 words
A semiconductor device according to claim 5, wherein high voltage is applied to said semiconductor layer so that a p-n junction between said semiconductor layer and said semiconductor substrate is reverse biased.
References Cited (Backward Citations)
US3893146A
Cited
US3953875A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-07-22 | 1984-01-21 | 1984-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-07-22 | 1988-01-21 | 1988-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-07-22 | 1992-01-21 | 1992-07-22 | $7700.00 | Window Closed / Lapsed |