← Back to Patent Explorer
US4207138A Expired / Lapsed US ⏱️ 0.0 years remaining

Mercury vapor leaching from microelectronic substrates

Assignee: RCA Corp
•
Filing: 1979-01-17
•
Granted: 1980-06-10
•
Expires: 1999-01-17
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A method for leaching mercury soluble metals from mercury insoluble substrates such as microelectronic devices without damaging the substrate or contaminating the environment with mercury. A mercury vapor jet is formed by passing mercury vapors through an orifice at residual gas pressure of about 10 -2 Torr and a temperature of from about 65° C. to about 150° C. The mercury vapor jet strikes the substrate at an angle which is substantially perpendicular to the center of the substrate and leaches the mercury soluble metal therefrom.

Inventors

  • 👤 Thomas T. Hitch

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 23:15
CPC Classifications
C; C22; C22B; C22B7/00; C22B7/001; C23; C23F; C23F4/00; C23F4/02; H; H05; H05K; H05K1/00; H05K1/02; H05K1/09; H05K1/092; H05K3/00; H05K3/22; Y; Y02; Y02P; Y02P10/00; Y02P10/20

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 105 words
A method for leaching metals from a substrate without damaging the substrate and contaminating the environment with mercury comprising: contacting said substrate with a mercury vapor jet at a temperature of at least about 65° C. to about 150° C., said mercury vapor jet having an expansion in width of said jet of less than about 4.0 mm per centimeter of distance traveled, at an angle which is substantially perpendicular with respect to the center of said jet and at a residual gas pressure of less than or equal to about 10 -2 Torr for a time sufficient to dissolve the metal from said substrate.
Claim 2
Independent Claim 105 words
A method for leaching metals from a substrate without damaging the substrate and contaminating the environment with mercury comprising: contacting said substrate with a mercury vapor jet at a temperature of at least about 65° C. to about 150° C., said mercury vapor jet having an expansion in width of said jet of less than about 4.0 mm per centimeter of distance traveled, at an angle which is substantially perpendicular with respect to the center of said jet and at a residual gas pressure of less than or equal to about 10 -2 Torr for a time sufficient to dissolve the metal from said substrate.
Claim 3
Dependent Claim 13 words
The method according to claim 1 wherein said substrate is a microelectronic device.
Claim 4
Dependent Claim 28 words
The method according to claim 1 wherein the substrate temperature is equal to or less than about 40° C. cooler than the temperature of the mercury vapor jet.
Claim 5
Dependent Claim 22 words
The method according to claim 1 wherein the residual gas pressure is from about 10 -4 Torr to about 10 -6 Torr.
Claim 6
Dependent Claim 21 words
The method according to claim 1 wherein the mercury vapor jet temperature is from about 100° C. to about 125° C.
Claim 7
Dependent Claim 20 words
The method according to claim 5 wherein said substrate is cooled to from about 20° C. to about 40° C.
Claim 8
Dependent Claim 14 words
The method according to claim 6 wherein the substrate temperature is about 20° C.
Claim 9
Dependent Claim 22 words
The method according to claim 1 wherein the mercury vapor jet expands less than about 2.5 mm per centimeter of distance traveled.
Claim 10
Independent Claim 146 words
A method for leaching metals from a substrate comprising: heating mercury to a temperature sufficient to form a mercury vapor; passing the mercury vapor through an orifice to form a mercury vapor jet with a temperature of at least about 65° C. to about 150° C. measured just prior to the mercury vapor striking said substrate and an expansion in width of said jet of less than about 4.0 mm per centimeter traveled; and contacting said substrate with said mercury vapor jet, at an angle which is substantially perpendicular with respect to the center of said mercury vapor jet, for a sufficient time to dissolve the mercury soluble metal from said substrate, wherein the substrate temperature is at least about 40° C. cooler than the temperature of the mercury vapor jet and at a residual gas pressure less than or equal to about 10 -2 Torr.
Claim 11
Independent Claim 146 words
A method for leaching metals from a substrate comprising: heating mercury to a temperature sufficient to form a mercury vapor; passing the mercury vapor through an orifice to form a mercury vapor jet with a temperature of at least about 65° C. to about 150° C. measured just prior to the mercury vapor striking said substrate and an expansion in width of said jet of less than about 4.0 mm per centimeter traveled; and contacting said substrate with said mercury vapor jet, at an angle which is substantially perpendicular with respect to the center of said mercury vapor jet, for a sufficient time to dissolve the mercury soluble metal from said substrate, wherein the substrate temperature is at least about 40° C. cooler than the temperature of the mercury vapor jet and at a residual gas pressure less than or equal to about 10 -2 Torr.
Claim 12
Dependent Claim 25 words
The method according to claim 9 further comprising: collecting, reheating and forming a mercury vapor jet with the mercury which is condensed on said substrate.

References Cited (Backward Citations)

US144772A Cited
US145265A Cited
US168695A Cited
US219132A Cited
US3257246A Cited
US3162104A Cited
US3518115A Cited
US3494768A Cited
US3923569A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1983-06-10 1983-12-10 1984-06-10 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1987-06-10 1987-12-10 1988-06-10 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1991-06-10 1991-12-10 1992-06-10 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag