US4203117A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dual beam line scanner for phased array applications
Assignee: United States Department of the Army
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Filing: 1978-09-28
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Granted: 1980-05-13
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Expires: 1998-09-28
Abstract
Abstract A millimeter wave line scanner is disclosed providing steered fan-shaped ms from opposite faces at substantially equal angles of a semiconductor waveguide, rectangular in cross section, and having a plurality of equally spaced metallic perturbations or strips disposed on one of the two radiating sides or faces. Different angles of scan are selectively obtained by means of at least one distributed longitudinal PIN diode formed on an adjoining side of the semiconductor waveguide having electrical circuit means coupled thereto for controlling the diode's conductivity which acts to change the guide wavelength and accordingly cause a variation in radiation angle of the two equal beams radiating in opposite directions and by means coupling energy of changing frequency to the semiconductor waveguide.
Inventors
- 👤 Harold Jacobs
- 👤 Robert E. Horn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 05:57
CPC Classifications
H; H01; H01Q; H01Q3/00; H01Q3/44; H01Q3/443; H01Q25/00; H01Q25/004; H01Q3/22
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
215 words
A semiconductor waveguide scanning antenna providing dual beams of radiation, comprising in combination: a length of semiconductor waveguide of rectangular cross section adapted to propagate wave energy along a longitudinal axis transverse to said cross section and having a plurality of spaced parallel metallic elements selectively located on one surface of said waveguide along its length which act as perturbations that interact with the propagated wave energy to produce a first radiation pattern directed outwardly from said one surface at a predetermined radiation angle and a second radiation pattern at substantially the same said predetermined radiation angle directed outwardly from a surface opposite said one surface; distributed PIN diode means formed from contiguous layers of semiconductive material located on an adjacent surface of said waveguide relative to said one and said opposite surface, said layers being disposed orthogonally with respect to and projecting outwardly from said adjacent surface, so that the PIN diode lies on an adjacent surface entirely outside the rectangular cross section of the semiconductor waveguide; and means coupled to said PIN diode means for applying a bias potential thereto for controlling the conductivity of said PIN diode means which has the effect of varying the wavelength of said semiconductor waveguide and accordingly the radiation angle of said first and second radiation pattern.
Claim 2
Dependent Claim
215 words
A semiconductor waveguide scanning antenna providing dual beams of radiation, comprising in combination: a length of semiconductor waveguide of rectangular cross section adapted to propagate wave energy along a longitudinal axis transverse to said cross section and having a plurality of spaced parallel metallic elements selectively located on one surface of said waveguide along its length which act as perturbations that interact with the propagated wave energy to produce a first radiation pattern directed outwardly from said one surface at a predetermined radiation angle and a second radiation pattern at substantially the same said predetermined radiation angle directed outwardly from a surface opposite said one surface; distributed PIN diode means formed from contiguous layers of semiconductive material located on an adjacent surface of said waveguide relative to said one and said opposite surface, said layers being disposed orthogonally with respect to and projecting outwardly from said adjacent surface, so that the PIN diode lies on an adjacent surface entirely outside the rectangular cross section of the semiconductor waveguide; and means coupled to said PIN diode means for applying a bias potential thereto for controlling the conductivity of said PIN diode means which has the effect of varying the wavelength of said semiconductor waveguide and accordingly the radiation angle of said first and second radiation pattern.
Claim 3
Dependent Claim
32 words
The antenna in accordance with claim 1 wherein said distributed PIN diode means is located in the region of said plurality of spaced parallel metallic elements and extending to the extremities thereof.
Claim 4
Dependent Claim
20 words
The antenna in accordance with claim 2 wherein said rectangular cross section of said semiconductor waveguide has substantially equal dimensions.
Claim 5
Dependent Claim
14 words
The antenna in accordance with claim 3 wherein said waveguide is composed of silicon.
Claim 6
Dependent Claim
28 words
The antenna in accordance with claim 1 wherein said PIN diode means comprises layers of P and N semiconductor material separated by a layer of intrinsic semiconductor material.
Claim 7
Dependent Claim
43 words
The antenna in accordance with claim 1 wherein said PIN diode means are shaped in the form of a trapezoid including a pair of parallel edges and wherein one of said parallel edges is in contact with said adjacent surface of said waveguide.
Claim 8
Dependent Claim
27 words
The antenna in accordance with claim 6 wherein said PIN diode means comprises a single distributed PIN diode aligned along said longitudinal axis of the semiconductor waveguide.
Claim 9
Dependent Claim
29 words
The antenna in accordance with claim 6 wherein said PIN diode means comprises a plurality of trapezoidal shaped PIN diodes aligned along said longitudinal axis of the semiconductor waveguide.
Claim 10
Dependent Claim
24 words
The antenna in accordance with claim 8 wherein said plurality of trapezoidal shaped PIN diodes have substantially equal separation distances between respective adjacent diodes.
Claim 11
Dependent Claim
13 words
The antenna in accordance with claim 1 wherein said semiconductor waveguide is tapered.
Claim 12
Dependent Claim
21 words
The antenna in accordance with claim 1 wherein said plurality of spaced metallic elements are equally spaced on said one surface.
Claim 13
Dependent Claim
32 words
The antenna in accordance with claim 1 and additionally including a source of RF energy having a variable output frequency coupled to said waveguide for launching wave energy along said longitudinal axis.
Claim 14
Dependent Claim
40 words
The antenna in accordance with any one of claims 1, 2, 5, 6, 10, 11, 12, wherein said PIN diode means in the dimension extending between said one surface and said opposite surface is substantially thinner than the semiconductor waveguide.
Claim 15
Dependent Claim
184 words
A semiconductor waveguide scanning antenna, comprising in combination: a length of semiconductor waveguide of rectangular cross section adapted to propagate wave energy along a longitudinal axis transverse to said cross section and having a plurality of spaced parallel metallic elements selectively located on one surface of said waveguide along its length which act as perturbations that interact with the propagated wave energy to produce at least a first radiation pattern directed outwardly from said one surface at a predetermined radiation angle; distributed PIN diode means formed from contiguous layers of semiconductive material located on an adjacent surface of said waveguide which is perpendicular to said one surface, said layers being disposed orthogonally with respect to and projecting outwardly from said adjacent surface, so that the PIN diode means lies entirely outside the rectangular cross section of the semiconductor waveguide; and means coupled to said PIN diode means for applying a bias potential thereto for controlling the conductivity of said PIN diode means which has the effect of varying the wavelength of said semiconductor waveguide and accordingly the radiation angle of said first radiation pattern.
Claim 16
Dependent Claim
184 words
A semiconductor waveguide scanning antenna, comprising in combination: a length of semiconductor waveguide of rectangular cross section adapted to propagate wave energy along a longitudinal axis transverse to said cross section and having a plurality of spaced parallel metallic elements selectively located on one surface of said waveguide along its length which act as perturbations that interact with the propagated wave energy to produce at least a first radiation pattern directed outwardly from said one surface at a predetermined radiation angle; distributed PIN diode means formed from contiguous layers of semiconductive material located on an adjacent surface of said waveguide which is perpendicular to said one surface, said layers being disposed orthogonally with respect to and projecting outwardly from said adjacent surface, so that the PIN diode means lies entirely outside the rectangular cross section of the semiconductor waveguide; and means coupled to said PIN diode means for applying a bias potential thereto for controlling the conductivity of said PIN diode means which has the effect of varying the wavelength of said semiconductor waveguide and accordingly the radiation angle of said first radiation pattern.
Claim 17
Dependent Claim
27 words
The antenna in accordance with claim 14, wherein said PIN diode means in the dimension perpendicular to said one surface is substantially thinner than the semiconductor waveguide.
Claim 18
Dependent Claim
32 words
The antenna in accordance with claim 15, wherein said distributed PIN diode means is located in the region of said plurality of spaced parallel metallic elements and extending to the extremities thereof.
Claim 19
Dependent Claim
14 words
The antenna in accordance with claim 15 wherein said waveguide is composed of silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-05-13 | 1983-11-12 | 1984-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-05-13 | 1987-11-12 | 1988-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-05-13 | 1991-11-12 | 1992-05-13 | $7700.00 | Window Closed / Lapsed |