US4199383A
Expired / Lapsed
US
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Method of making a photovoltaic cell employing a PbO-SnO heterojunction
Assignee: University of Southern California
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Filing: 1978-02-28
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Granted: 1980-04-22
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Expires: 1998-02-28
Abstract
Abstract A photovoltaic cell that incorporates a PbO-SnO heterojunction of graded composition which, among other applications, can be utilized for the conversion of solar energy to electrical energy. A p-i-n junction is formed while PbO and SnO are simultaneously deposited on a substrate in a varying ratio that is either decreased or increased to form the compositions Pb 1-x Sn x O where x varies in the range of 0 to 1.
Inventors
- 👤 David B. Wittry
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:09
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/13; H10F10/16; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
115 words
In a method of making a photovoltaic cell, the steps comprising: providing a substrate of electrically conductive material; forming on said substrate a first region of photoconductive material selected from SnO and Pb 1-x Sn x O, having a first conductivity type; forming a second region, of intrinsic photoconductive Pb 1-x Sn x O, on said first region; and forming a third region, of photoconductive material selected from PbO and Pb 1-x Sn x O having a conductivity type opposite said first conductivity type, on said second region; wherein x is progressively smaller from said first region to said third region from a value of less than 1 to a value of greater than 0.
Claim 2
Dependent Claim
115 words
In a method of making a photovoltaic cell, the steps comprising: providing a substrate of electrically conductive material; forming on said substrate a first region of photoconductive material selected from SnO and Pb 1-x Sn x O, having a first conductivity type; forming a second region, of intrinsic photoconductive Pb 1-x Sn x O, on said first region; and forming a third region, of photoconductive material selected from PbO and Pb 1-x Sn x O having a conductivity type opposite said first conductivity type, on said second region; wherein x is progressively smaller from said first region to said third region from a value of less than 1 to a value of greater than 0.
Claim 3
Dependent Claim
23 words
The method of claim 1 in which x in said intrinsic region varies in graded manner across the thickness of said intrinsic region.
Claim 4
Dependent Claim
21 words
The method of claim 1 in which at least said intrinsic region is formed by simultaneous deposition of PbO and SnO.
Claim 5
Dependent Claim
26 words
The method of claim 3 in which the relative amounts of said deposited PbO and SnO are varied during formation of at least said intrinsic region.
Claim 6
Dependent Claim
24 words
The method of claim 1 wherein said substrate temperature is maintained at about 390° C.-400° C. during formation of said region of photoconductive material.
Claim 7
Dependent Claim
19 words
The method of claim 1 wherein said photoconductive material is formed by controlled vacuum evaporation of PbO and SnO.
Claim 8
Dependent Claim
26 words
The method of claim 1 wherein said photoconductive material is formed by reactive gas sputtering from separate sources of Pb and Sn in an oxidative atmosphere.
Claim 9
Dependent Claim
42 words
The method of claim 7 wherein said substrate is moved from a position adjacent said Sn source to a position adjacent to said Pb source during formation of said photoconductive material to obtain a gradation in the concentration of Sn and Pb.
Claim 10
Dependent Claim
115 words
In a method of making a photovoltaic cell, the steps comprising: providing a substrate of electrically conductive material; forming on said substrate a first region of photoconductive material selected from PbO and Pb 1-x Sn x O having a first conductivity type; forming a second region, of intrinsic photoconductive Pb 1-x Sn x O, on said first region; and forming a third region of photoconductive material selected from SnO and Pb 1-x Sn x O, having a conductivity type opposite said first conductivity type, on said second region; wherein x is progressively larger from said first region to said third region from a value of greater than 0 to a value of less than 1.
Claim 11
Dependent Claim
115 words
In a method of making a photovoltaic cell, the steps comprising: providing a substrate of electrically conductive material; forming on said substrate a first region of photoconductive material selected from PbO and Pb 1-x Sn x O having a first conductivity type; forming a second region, of intrinsic photoconductive Pb 1-x Sn x O, on said first region; and forming a third region of photoconductive material selected from SnO and Pb 1-x Sn x O, having a conductivity type opposite said first conductivity type, on said second region; wherein x is progressively larger from said first region to said third region from a value of greater than 0 to a value of less than 1.
Claim 12
Dependent Claim
23 words
The method of claim 9 in which x in said intrinsic region varies in graded manner across the thickness of said intrinsic region.
Claim 13
Dependent Claim
21 words
The method of claim 9 in which at least said intrinsic region is formed by simultaneously deposition of PbO and SnO.
Claim 14
Dependent Claim
26 words
The method of claim 11 in which the relative amounts of said deposited PbO and SnO are varied during formation of at least said intrinsic region.
Claim 15
Dependent Claim
31 words
The method of claim 9 wherein said substrate temperature is varied from an initial temperature of about 500° C., but below the orthorhombic transition temperature of PbO, to below 400° C.
Claim 16
Dependent Claim
19 words
The method of claim 9 wherein said photoconductive material is formed by controlled vacuum evaporation of PbO and SnO.
Claim 17
Dependent Claim
26 words
The method of claim 9 wherein said photoconductive material is formed by reactive gas sputtering from separate sources of Pb and Sn in an oxidizing atmosphere.
Claim 18
Dependent Claim
41 words
The method of claim 15 wherein said substrate is moved from a position adjacent said Pb source to a position adjacent said Sn source during formation of said photoconductive material to obtain a gradation in the concentration of Sn and Pb.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-04-22 | 1983-10-22 | 1984-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-04-22 | 1987-10-22 | 1988-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-04-22 | 1991-10-22 | 1992-04-22 | $7700.00 | Window Closed / Lapsed |