US4198247A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sealant films for materials having high intrinsic vapor pressure
Assignee: General Electric Co
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Filing: 1978-12-07
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Granted: 1980-04-15
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Expires: 1998-12-07
Abstract
Abstract A sealant film is employed to migrate species having a high intrinsic vapor pressure through a solid body of semiconductor material by temperature gradient zone melting.
Inventors
- 👤 Thomas R. Anthony
- 👤 Harvey E. Cline
- 👤 Douglas E. Houston
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:29
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S438/00; Y10S438/902
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
296 words
A process for making a semiconductor device comprising the steps of: selecting a body of semiconductor material having a predetermined level of resistivity, a predetermined type conductivity and two major opposed surfaces which are, respectively, the top and bottom surfaces thereof with at least one of the major surfaces having a preferred planar crystal structure orientation and a vertical axis which is substantially parallel with a first axis of the crystal structure and substantially perpendicular to the at least one major surface having the preferred crystal planar orientation; depositing a predetermined thickness of a layer of a first material of a volatile nature in the liquid state on a predetermined portion of the at least one major surface of the body having the preferred crystal planar orientation with the layer of the first material having a predetermined geometrical configuration; depositing a predetermined thickness of a layer of a second material of a solid and nonvolatile and insoluble nature at the temperature-gradient-zone-melting temperature over the layer of the first material; heating the body and the first and second materials deposited thereon to an elevated temperature sufficient to form a melt of only the layer of deposited first material and a portion of the semiconductor body in contact therewith; establishing a unidirectional temperature gradient across the body between the two opposed major surfaces substantially parallel with the vertical axis wherein the surface upon which the melt is formed is at the lower temperature; migrating the melt comprising the layer of first material and a portion of the semiconductor material in contact therewith through the entire semiconductor body along the unidirectional thermal gradient from the surface of lower temperature to form a region of recrystallized semiconductor material of the body having solid solubility of the deposited first material therein.
Claim 2
Dependent Claim
296 words
A process for making a semiconductor device comprising the steps of: selecting a body of semiconductor material having a predetermined level of resistivity, a predetermined type conductivity and two major opposed surfaces which are, respectively, the top and bottom surfaces thereof with at least one of the major surfaces having a preferred planar crystal structure orientation and a vertical axis which is substantially parallel with a first axis of the crystal structure and substantially perpendicular to the at least one major surface having the preferred crystal planar orientation; depositing a predetermined thickness of a layer of a first material of a volatile nature in the liquid state on a predetermined portion of the at least one major surface of the body having the preferred crystal planar orientation with the layer of the first material having a predetermined geometrical configuration; depositing a predetermined thickness of a layer of a second material of a solid and nonvolatile and insoluble nature at the temperature-gradient-zone-melting temperature over the layer of the first material; heating the body and the first and second materials deposited thereon to an elevated temperature sufficient to form a melt of only the layer of deposited first material and a portion of the semiconductor body in contact therewith; establishing a unidirectional temperature gradient across the body between the two opposed major surfaces substantially parallel with the vertical axis wherein the surface upon which the melt is formed is at the lower temperature; migrating the melt comprising the layer of first material and a portion of the semiconductor material in contact therewith through the entire semiconductor body along the unidirectional thermal gradient from the surface of lower temperature to form a region of recrystallized semiconductor material of the body having solid solubility of the deposited first material therein.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the first material is one selected from the group consisting of antimony, arsenic and phosphorus.
Claim 4
Dependent Claim
23 words
The method of claim 1 or 2 wherein the second material is one selected from the group consisting of tungsten, tantalum and molybdenum.
Claim 5
Dependent Claim
15 words
The method of claim 1 or 2 wherein the second material is a refractory oxide.
Claim 6
Dependent Claim
15 words
The method of claim 1 or 2 wherein the second material is a refractory compound.
Claim 7
Independent Claim
13 words
The method of claims 1 or 2 wherein the semiconductor material is silicon.
Claim 8
Dependent Claim
61 words
The method of claim 2 wherein the first material is antimony, the second material is magnesium, and further including the process steps of reacting the magnesium with a portion of the antimony prior to initiation of the forming of the melt to form a layer of magnesium antimonide to seal the balance of the antimony therein for migration through the body.
Claim 9
Dependent Claim
11 words
The method of claim 3 wherein the semiconductor material is silicon.
Claim 10
Dependent Claim
11 words
The method of claim 4 wherein the semiconductor material is silicon.
Claim 11
Dependent Claim
11 words
The method of claim 5 wherein the semiconductor material is silicon.
References Cited (Backward Citations)
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Cited
US3972741A
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US3988766A
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US4141757A
Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-04-15 | 1983-10-15 | 1984-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-04-15 | 1987-10-15 | 1988-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-04-15 | 1991-10-15 | 1992-04-15 | $7700.00 | Window Closed / Lapsed |