US4194162A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toshiba Corp
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Filing: 1978-03-22
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Granted: 1980-03-18
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Expires: 1998-03-22
Abstract
Abstract A semiconductor device includes a semiconductor layer on one side of a semiconductor body to define a pn-junction therebetween, diffraction gratings formed at a distance from each other on the top of said semiconductor layer, and electrodes formed between the diffraction gratings on the top of said semiconductor and formed on the other side of the semiconductor body.
Inventors
- 👤 Yutaka Uematsu
- 👤 Yoichi Unno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 14:16
CPC Classifications
H; H10; H10F; H10F55/00; H10F55/10; H10F55/16; H10F55/165; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/185; H01S5/187
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
121 words
A semiconductor device comprising a semiconductor body, a semiconductor layer as a photoconductive path disposed on one side of said body and defining a pn-junction between said layer and body, first and second diffraction gratings formed at a distance from each other on top of said semiconductor layer, a first electrode disposed between said first and second diffraction gratings on top of said semiconductor layer, a second electrode disposed on the other side of said semiconductor body so as to face said first electrode, a third diffraction grating formed at a distance from said first diffraction grating on top of said semiconductor layer and a third electrode disposed between said first and third diffraction gratings on top of said semiconductor layer.
Claim 2
Dependent Claim
121 words
A semiconductor device comprising a semiconductor body, a semiconductor layer as a photoconductive path disposed on one side of said body and defining a pn-junction between said layer and body, first and second diffraction gratings formed at a distance from each other on top of said semiconductor layer, a first electrode disposed between said first and second diffraction gratings on top of said semiconductor layer, a second electrode disposed on the other side of said semiconductor body so as to face said first electrode, a third diffraction grating formed at a distance from said first diffraction grating on top of said semiconductor layer and a third electrode disposed between said first and third diffraction gratings on top of said semiconductor layer.
Claim 3
Dependent Claim
60 words
A semiconductor device according to claim 1 further comprising a first light-fiber having one end facing said first diffraction grating and rendering beams of light incident upon said first diffraction grating, and second and third light-fibers having each one end facing said second and third diffraction gratings and receiving beams of light radiated from said second and third diffraction gratings.
Claim 4
Dependent Claim
91 words
A semiconductor device according to claim 2, wherein said semiconductor body includes a semiconductor substrate of one conductivity type with said second electrode disposed on one side thereof and a first semiconductor layer of the same conductivity type disposed on the other side of said semiconductor substrate and formed of a material different from that of said substrate, and said photoconductive path semiconductor layer is disposed on top of said first semiconductor layer and includes a second semiconductor layer of a conductivity type opposite to that of said first semiconductor layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-03-18 | 1983-09-17 | 1984-03-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-03-18 | 1987-09-17 | 1988-03-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-03-18 | 1991-09-17 | 1992-03-18 | $7700.00 | Window Closed / Lapsed |