US4193687A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High resolution alignment technique and apparatus
Assignee: Boeing North American Inc
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Filing: 1978-06-05
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Granted: 1980-03-18
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Expires: 1998-06-05
Abstract
Abstract There is provided a technique and apparatus for aligning a mask to a substrate with high precision using Moire fringe effects produced by superimposing diffraction gratings. The gratings comprise first and second patterns of horizontal and vertical lines and spaces, respectively. The first pattern comprises horizontal and vertical lines and spaces of a first width. The second pattern comprises horizontal and vertical lines of a second width which differs from the lines in the first pattern by a small amount Δ. The patterns are superimposed to provide a Moire fringe effect. When alignment occurs, a symmetrical pattern is provided. If misalignment in the X, Y or θ coordinate occurs, an assymmetrical or skewed pattern of Moire fringe effects is generated.
Inventors
- 👤 John P. Reekstin
- 👤 Sigfried G. Plonski
- 👤 Addison B. Jones
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:16
CPC Classifications
G; G03; G03F; G03F9/00; G03F9/70; G03F9/7049; G03F9/7073; G03F9/7076; Y; Y10; Y10S; Y10S438/00; Y10S438/975
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
139 words
Apparatus for high precision alignment of a mask and a substrate in the manufacture of microelectronic devices comprising, first pattern means comprising a plurality of northogonal lines and spaces which form a first grid, each of said lines and spaces of said first pattern means having a first prescribed width, second pattern means comprising a plurality of n-2 orthogonal lines and spaces which form a second grid, each of said lines and spaces of said second pattern means having a second prescribed width, one of said first and second pattern means formed on said mask and the other of said first and second pattern means formed on said substrate, said first and second pattern means adapted to produce moire images as a function of the relative alignment of said first and second pattern means on said mask and substrate.
Claim 2
Dependent Claim
139 words
Apparatus for high precision alignment of a mask and a substrate in the manufacture of microelectronic devices comprising, first pattern means comprising a plurality of northogonal lines and spaces which form a first grid, each of said lines and spaces of said first pattern means having a first prescribed width, second pattern means comprising a plurality of n-2 orthogonal lines and spaces which form a second grid, each of said lines and spaces of said second pattern means having a second prescribed width, one of said first and second pattern means formed on said mask and the other of said first and second pattern means formed on said substrate, said first and second pattern means adapted to produce moire images as a function of the relative alignment of said first and second pattern means on said mask and substrate.
Claim 3
Dependent Claim
36 words
The apparatus recited in claim 1 wherein said lines and spaces of said first pattern means have a prescribed width d, and said lines and spaces of said second pattern means have a prescribed width d+Δ.
Claim 4
Dependent Claim
19 words
The apparatus recited in claim 1 wherein said first and second pattern means are squares with side dimensions w.
Claim 5
Dependent Claim
52 words
A method of aligning a plurality of items comprising the steps of, forming the apparatus recited in claim 1, superimposing said first and second pattern means with respect to each other, and observing the image produced by the superimposed pattern means until a preferred image is produced to indicate a preferred alignment.
Claim 6
Dependent Claim
96 words
The method recited in claim 4 comprising the steps of, forming said first pattern on said substrate, forming a plurality of said second patterns on a first mask, aligning said mask and said substrate by means of said first pattern and one of said second patterns on said mask, transferring the other of said plurality of said second patterns to said substrate to provide another pattern for alignment on said substrate, forming a plurality of said first patterns on a further mask, and aligning said substrate and said further mask by means of said patterns thereon.
Claim 7
Dependent Claim
33 words
The method recited in claim 5 comprising the steps of continuing to form patterns on subsequent masks which patterns alternate in terms of the first or second pattern being applied to alternate masks.
Claim 8
Dependent Claim
22 words
The apparatus recited in claim 1 wherein said items include substrates which are transparent to radiation which has a characteristic photon energy.
Claim 9
Dependent Claim
24 words
The apparatus recited in claim 1 wherein said terms include at least one mask which is transparent to radiation which has a characteristic energy.
Claim 10
Dependent Claim
24 words
The apparatus recited in claim 8 wherein said items include at least one substrate which is transparent to radiation which has a characteristic energy.
Claim 11
Dependent Claim
31 words
The apparatus recited in claim 1 wherein, said image is symmetrical when said first and second patterns are in alignment and is asymmetrical when said first and second patterns are misaligned.
Claim 12
Independent Claim
15 words
The apparatus recited in claim wherein, said mask includes a plurality of said patterns thereon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-03-18 | 1983-09-17 | 1984-03-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-03-18 | 1987-09-17 | 1988-03-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-03-18 | 1991-09-17 | 1992-03-18 | $7700.00 | Window Closed / Lapsed |