US4187516A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuits
Assignee: Raytheon Co
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Filing: 1977-09-13
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Granted: 1980-02-05
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Expires: 1997-09-13
Abstract
Abstract A semiconductor integrated circuit which is reduced in size by having active and/or passive elements in an epitaxial layer having a [100] crystallographic surface, and having anisotropically etched regions with sloped [111] crystallographic surface walls which isolate adjacent semiconductor elements and/or regions of semiconductor material beneath said elements. Conductors interconnecting said elements are supported on the [100] and [111] crystallographic surfaces and contact said elements and/or said high conductivity regions through apertures in surface passivating protective coatings on said surfaces.
Inventors
- 👤 Wilhelm H. Legat
- 👤 Keith G. Taft
- 👤 Karl H. Tiefert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 07:05
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/411; G11C11/4116; H; H03; H03K; H03K3/00; H03K3/02; H03K3/26; H03K3/28; H03K3/281; H03K3/286; H03K3/288; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/644; H10W; H10W10/00; H10W10/01; H10W10/021; H10W10/20; H10W20/00; H10W20/01
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
150 words
In combination: a semiconductor substrate of a first conductivity type having a plurality of high conductivity regions of a second conductivity type diffused therein; a plurality of active semiconductor elements in an epitaxial layer of monocrystalline semiconductor material having a <100> crystallographic surface plane and supported by said substrate; each of said elements comprising a plurality of emitter regions formed in a common base region and having separate emitter contacts formed therewith and electrically isolated from each other; said elements having unidirectionally conductive collector junctions comprising regions of said layer contacting said high conductivity regions; portions of said layer extending beyond said highconductivity regions and providing regions of substantial resistance directly connected in said collector junction regions; and isolation regions etched from said <100> surface plane along <101> crystallographic surface planes completely through said layer between at least portions of said semiconductor elements and bounding portions of said resistance regions.
Claim 2
Dependent Claim
150 words
In combination: a semiconductor substrate of a first conductivity type having a plurality of high conductivity regions of a second conductivity type diffused therein; a plurality of active semiconductor elements in an epitaxial layer of monocrystalline semiconductor material having a <100> crystallographic surface plane and supported by said substrate; each of said elements comprising a plurality of emitter regions formed in a common base region and having separate emitter contacts formed therewith and electrically isolated from each other; said elements having unidirectionally conductive collector junctions comprising regions of said layer contacting said high conductivity regions; portions of said layer extending beyond said highconductivity regions and providing regions of substantial resistance directly connected in said collector junction regions; and isolation regions etched from said <100> surface plane along <101> crystallographic surface planes completely through said layer between at least portions of said semiconductor elements and bounding portions of said resistance regions.
Claim 3
Dependent Claim
24 words
The combination in accordance with claim 21 wherein said isolation regions extend through said layer from said <100> crystallographic surface and into said substrate.
Claim 4
Dependent Claim
35 words
The combination in accordance with claim 21 wherein said substrate comprises a semiconductor region of a first conductivity type and said layer comprises semiconductor material of a second conductivity type epitaxially formed on said substrate.
Claim 5
Dependent Claim
26 words
The combination in accordance with claim 21 wherein the co-lector regions of a plurality of adjacent active elements are interconnected by one of said resistance regions.
Claim 6
Dependent Claim
30 words
The combination with claim 1 wherein a bipolar memory cell is formed of a plurality of transistor active elements having collector regions directly interconnected through one of said resistive portions.
Claim 7
Dependent Claim
56 words
The combination in accordance with claim 5 wherein each of section of said cell comprises a first transistor having a collector connected to a source of power through a first of said resistive portions and a second transistor having a collector connected to the collector of said first transistor through a second of said resistive portions.
Claim 8
Dependent Claim
26 words
The combination in accordance with claim 6 wherein the major portions of the peripheral boundaries of said resistive portions are defined by said etching isolation regions.
Claim 9
Dependent Claim
18 words
The combination in accordance with claim 7 wherein said memory cell comprises a plurality of emitter coupled circuits.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-02-04 | 1983-08-06 | 1984-02-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-02-04 | 1987-08-06 | 1988-02-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-02-04 | 1991-08-06 | 1992-02-05 | $7700.00 | Window Closed / Lapsed |