US4186355A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor diode laser with increased frequency tuning range
Assignee: Motors Liquidation Co
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Filing: 1978-03-31
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Granted: 1980-01-29
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Expires: 1998-03-31
Abstract
Abstract A semiconductor diode laser tunable within a range of over 200 wave numbers. Increased tuning range of a lead-salt laser, from about 30 to over 200 wave numbers, is attained by providing an increasing majority carrier concentration in the laser crystal within the laser cavity in the direction extending away from the contiguous PN junction contiguous the laser cavity.
Inventors
- 👤 Wayne Lo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:46
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/06209; H01S5/0622; H01S5/30; H01S5/32; H01S5/3222
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
47 words
In a lead-salt semiconductor diode laser having a PN junction and contiguous laser cavity, the improvement wherein said laser cavity has a non-homogeneous majority current carrier concentration generally normal to said PN junction effective to significantly increase the frequency range within which said laser can be tuned.
Claim 2
Dependent Claim
47 words
In a lead-salt semiconductor diode laser having a PN junction and contiguous laser cavity, the improvement wherein said laser cavity has a non-homogeneous majority current carrier concentration generally normal to said PN junction effective to significantly increase the frequency range within which said laser can be tuned.
Claim 3
Dependent Claim
62 words
In a lead-salt semiconductor diode laser having a PN junction and contiguous P-type laser cavity, the improvement wherein said laser cavity has an increasing majority current carrier concentration in a direction extending away from said PN junction effective to increase photon confinement within the laser cavity and widen the frequency range within which said laser can be tuned for single mode operation.
Claim 4
Dependent Claim
62 words
In a lead-salt semiconductor diode laser having a PN junction and contiguous P-type laser cavity, the improvement wherein said laser cavity has an increasing majority current carrier concentration in a direction extending away from said PN junction effective to increase photon confinement within the laser cavity and widen the frequency range within which said laser can be tuned for single mode operation.
Claim 5
Dependent Claim
96 words
In a semiconductor diode laser having a PN junction and a contiguous P-type laser cavity formed in a lead-salt monocrystal, the improvement wherein said PN junction is generally uniformly spaced less than about 20 micrometers from a surface on the monocrystal that is cooled during laser operation, said laser cavity is disposed along said PN junction opposite from said surface, and said laser cavity has a continuously increasing majority current carrier concentration with increasing distance from said PN junction effective to increase the single mode operation frequency range within which said laser body can be tuned.
Claim 6
Dependent Claim
96 words
In a semiconductor diode laser having a PN junction and a contiguous P-type laser cavity formed in a lead-salt monocrystal, the improvement wherein said PN junction is generally uniformly spaced less than about 20 micrometers from a surface on the monocrystal that is cooled during laser operation, said laser cavity is disposed along said PN junction opposite from said surface, and said laser cavity has a continuously increasing majority current carrier concentration with increasing distance from said PN junction effective to increase the single mode operation frequency range within which said laser body can be tuned.
Claim 7
Dependent Claim
124 words
In a homojunction semiconductor diode laser formed in a body of monocrystalline semiconductive material selected from the group consisting of lead-tin telluride and lead-tin selenide and having a generally planar PN junction and a contiguous parallel laser cavity, the improvement wherein said planar PN junction is generally parallelly spaced about 5-15 micrometers from a surface on said laser body that is intended to be cooled during laser operation, said laser cavity is of P-type semiconductor material contiguous said PN junction opposite from said surface and said laser cavity has a majority current carrier concentration that progressively increases with increasing distance from said junction effective to increase photon confinement within the laser cavity, whereby operating temperature and tuning range of the laser body is increased.
Claim 8
Dependent Claim
124 words
In a homojunction semiconductor diode laser formed in a body of monocrystalline semiconductive material selected from the group consisting of lead-tin telluride and lead-tin selenide and having a generally planar PN junction and a contiguous parallel laser cavity, the improvement wherein said planar PN junction is generally parallelly spaced about 5-15 micrometers from a surface on said laser body that is intended to be cooled during laser operation, said laser cavity is of P-type semiconductor material contiguous said PN junction opposite from said surface and said laser cavity has a majority current carrier concentration that progressively increases with increasing distance from said junction effective to increase photon confinement within the laser cavity, whereby operating temperature and tuning range of the laser body is increased.
Claim 9
Dependent Claim
113 words
In a homojunction lead-tin telluride semiconductor diode laser body having a PN junction and a contiguous laser cavity, the improvement wherein said PN junction is planar and generally parallelly spaced less than about 15 micrometers from a surface on said body that is to be cooled during laser operation, said laser cavity is a P-type conductivity region along said PN junction opposite from said surface, and said laser cavity has a majority current carrier concentration that increases continuously with increasing distance in a direction normal to said PN junction within a concentration range of about 10 18 -10 19 carriers per cubic centimeter, whereby frequencies of single mode laser operation are significantly increased.
Claim 10
Dependent Claim
113 words
In a homojunction lead-tin telluride semiconductor diode laser body having a PN junction and a contiguous laser cavity, the improvement wherein said PN junction is planar and generally parallelly spaced less than about 15 micrometers from a surface on said body that is to be cooled during laser operation, said laser cavity is a P-type conductivity region along said PN junction opposite from said surface, and said laser cavity has a majority current carrier concentration that increases continuously with increasing distance in a direction normal to said PN junction within a concentration range of about 10 18 -10 19 carriers per cubic centimeter, whereby frequencies of single mode laser operation are significantly increased.
Claim 11
Independent Claim
94 words
A method of making a more tunable lead-salt diode laser comprising providing a semiconductor lead-salt monocrystal having a one conductivity type portion that progressively increases in majority current carrier concentration inwardly from the monocrystal surface and progressively changes the index of refraction therein, forming a PN junction within said portion generally parallel to said surface to provide an active region for a laser in said monocrystal portion, defining a laser cavity in said active region of said monocrystal portion, and applying electrodes to said monocrystal portion for producing lasing action in said laser cavity.
Claim 12
Independent Claim
94 words
A method of making a more tunable lead-salt diode laser comprising providing a semiconductor lead-salt monocrystal having a one conductivity type portion that progressively increases in majority current carrier concentration inwardly from the monocrystal surface and progressively changes the index of refraction therein, forming a PN junction within said portion generally parallel to said surface to provide an active region for a laser in said monocrystal portion, defining a laser cavity in said active region of said monocrystal portion, and applying electrodes to said monocrystal portion for producing lasing action in said laser cavity.
Claim 13
Independent Claim
139 words
A method of making a lead-tin telluride semiconductor diode laser tunable in single mode operation over a wider band of frequencies comprising the steps of providing a lead-tin telluride semiconductor monocrystal having a P-type surface portion that increases in majority current carrier concentration with increasing depth below said surface from about 10 18 carriers per cubic centimeter at said surface to about 10 19 carriers per cubic centimeter 100-150 micrometers below said surface, diffusing an N-type impurity into said surface portion to form a PN junction and contiguous active laser region that are spaced less than about 20 micrometers below said surface and are parallel to said carrier concentration increases, defining a laser cavity for said active region in said monocrystal portion, and providing ohmic contacts on the monocrystal portion for applying a lasing voltage across said PN junction.
Claim 14
Independent Claim
139 words
A method of making a lead-tin telluride semiconductor diode laser tunable in single mode operation over a wider band of frequencies comprising the steps of providing a lead-tin telluride semiconductor monocrystal having a P-type surface portion that increases in majority current carrier concentration with increasing depth below said surface from about 10 18 carriers per cubic centimeter at said surface to about 10 19 carriers per cubic centimeter 100-150 micrometers below said surface, diffusing an N-type impurity into said surface portion to form a PN junction and contiguous active laser region that are spaced less than about 20 micrometers below said surface and are parallel to said carrier concentration increases, defining a laser cavity for said active region in said monocrystal portion, and providing ohmic contacts on the monocrystal portion for applying a lasing voltage across said PN junction.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-01-28 | 1983-07-30 | 1984-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-01-28 | 1987-07-30 | 1988-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-01-28 | 1991-07-30 | 1992-01-29 | $7700.00 | Window Closed / Lapsed |