Junction field effect transistor for use in integrated circuits

Claim 2

A junction field effect transistor for incorporation into a bipolar semiconductor integrated circuit substrate, said transistor comprising: a gate region of one conductivity type into which said transistor is to be fabricated;

Claim 3

a pair of spaced apart regions of the opposite conductivity type extending into said gate region from the surface thereof, said spaced apart regions forming source and drain electrodes in said transistor; a subsurface channel of said opposite conductivity type extending between said pair of spaced apart regions, said channel extending to a depth in said semiconductor that is substantially less than the depth of said spaced apart regions; a first ion implanted surface layer of said one conductivity type completely covering and overlapping said channel so as to form an ohmic connection with said gate region, said first ion implanted surface layer having a thickness that is small relative to the thickness of said channel; a second ion implanted surface layer of said one conductivity type located in the space between said spaced apart regions and extending to completely span said channel thereby to make an ohmic connection to said gate region, said second ion implanted surface layer having a substantially greater conductivity and extending below said surface to a greater extent than said first ion implanted surface layer; and ohmic connections to said pair of spaced apart regions and said gate region to complete said source, drain, and gate electrodes.

Claim 4

a pair of spaced apart regions of the opposite conductivity type extending into said gate region from the surface thereof, said spaced apart regions forming source and drain electrodes in said transistor; a subsurface channel of said opposite conductivity type extending between said pair of spaced apart regions, said channel extending to a depth in said semiconductor that is substantially less than the depth of said spaced apart regions; a first ion implanted surface layer of said one conductivity type completely covering and overlapping said channel so as to form an ohmic connection with said gate region, said first ion implanted surface layer having a thickness that is small relative to the thickness of said channel; a second ion implanted surface layer of said one conductivity type located in the space between said spaced apart regions and extending to completely span said channel thereby to make an ohmic connection to said gate region, said second ion implanted surface layer having a substantially greater conductivity and extending below said surface to a greater extent than said first ion implanted surface layer; and ohmic connections to said pair of spaced apart regions and said gate region to complete said source, drain, and gate electrodes.

Claim 5

The transistor of claim 1 wherein said channel is ion implanted and has a conductivity that is substantially less than that of said spaced apart regions.

Claim 6

The transistors of claim 2 wherein said channel extends below said surface less than about one micron, said first ion implanted surface layer is less than about 0.1 micron in thickness and said second ion implanted surface layer is less than about 0.5 micron in thickness.

Claim 7

The transistor of claim 1 wherein said gate region comprises an isolated portion of an epitaxial layer located on a semiconductor substrate wafer that additionally includes bipolar junction transistors therein.

Claim 8

The transistor of claim 4 wherein said spaced apart regions are fabricated during bipolar function transistor base diffusion and said ohmic connection to said gate region includes a region formed during bipolar junction transistor emitter diffusion.

Claim 9

The transistor of claim 5 wherein said isolated portion includes a conductive buried layer to reduce the gate resistance of said transistor.

Claim 10

The transistor of claim 6 wherein said gate is n type and said spaced apart regions p type.

Claim 11

A monolithic semiconductor integrated circuit having bipolar junction transistors that incorporate emitter and base elements diffused into collector element semiconductor material and including at least one junction field effect transistor fabricated therein using compatible construction techniques, said junction field effect transistor comprising: a gate region located in a portion of said collector element semiconductor material; spaced apart source and drain regions composed of said base element material; a subsurface channel region located less than about one micron below the surface of said semiconductor and extending between said source and drain regions; a surface cap covering and overlapping said channel region, said cap being of the same conductivity type as said gate, in ohmic contact with said gate in the region of overlap, and extending below the surface of said semiconductor to a depth that is small compared to the depth of said channel; an ion implanted top gate layer located to span said channel but spaced away from said source and drain regions, said top gate having the same conductivity type and substantially greater doping than said surface cap and extending to a substantially greater distance below said semiconductor surface but to a depth less than the depth of said channel region; and means for making connection to said source, drain and gate regions.

Claim 12

A monolithic semiconductor integrated circuit having bipolar junction transistors that incorporate emitter and base elements diffused into collector element semiconductor material and including at least one junction field effect transistor fabricated therein using compatible construction techniques, said junction field effect transistor comprising: a gate region located in a portion of said collector element semiconductor material; spaced apart source and drain regions composed of said base element material; a subsurface channel region located less than about one micron below the surface of said semiconductor and extending between said source and drain regions; a surface cap covering and overlapping said channel region, said cap being of the same conductivity type as said gate, in ohmic contact with said gate in the region of overlap, and extending below the surface of said semiconductor to a depth that is small compared to the depth of said channel; an ion implanted top gate layer located to span said channel but spaced away from said source and drain regions, said top gate having the same conductivity type and substantially greater doping than said surface cap and extending to a substantially greater distance below said semiconductor surface but to a depth less than the depth of said channel region; and means for making connection to said source, drain and gate regions.

Claim 13

The monolithic integrated circuit of claim 8 where said circuit includes regions of p n junction isolated semiconductor material and said junction field effect transistor is fabricated into one such isolated region.

Claim 14

The monolithic integrated circuit of claim 9 wherein said isolated region is formed over a highly conductive buried layer whereby the gate resistance of said junction field effect transistor is lowered.