US4176367A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor optical device
Assignee: Toshiba Corp
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Filing: 1978-03-10
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Granted: 1979-11-27
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Expires: 1998-03-10
Abstract
Abstract A semiconductor optical device includes a semiconductor body, a light emitting layer formed on the body to form a pn junction therebetween, a semiconductor layer formed on the light emitting layer and a diffusing region formed in the semiconductor layer to define a pn junction therebetween and electrically connected to the light emitting layer. Three electrodes are respectively provided on the semiconductor body, semiconductor layer and diffusing region, which are selectively operated.
Inventors
- 👤 Yutaka Uematsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:49
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; G02B6/4201; G02B6/4246; H; H04; H04B; H04B10/00; H04B10/40; H04B10/43; H10; H10F; H10F55/00; H10F55/18
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
152 words
A semiconductor optical device comprising a one-conductivity type semiconductor body through a portion of which light passes; a first semiconductor layer of the other conductivity type formed on one surface of the body to provide a pn junction therebetween and having a light emission section; a second semiconductor layer of said one conductivity type formed on said first semiconductor layer; a region formed in said second semiconductor layer to form a pn junction therebetween and having one end electrically connected to said first semiconductor layer and the other end exposed, said pn junction having a photoelectric conversion function; a first electrode formed on said body to permit a signal entry; a second electrode formed on said second semiconductor layer to permit the signal to be taken therefrom; and a third electrode formed on said region, said portion of the semiconductor body, light emission section and region being arranged on the same line.
Claim 2
Dependent Claim
152 words
A semiconductor optical device comprising a one-conductivity type semiconductor body through a portion of which light passes; a first semiconductor layer of the other conductivity type formed on one surface of the body to provide a pn junction therebetween and having a light emission section; a second semiconductor layer of said one conductivity type formed on said first semiconductor layer; a region formed in said second semiconductor layer to form a pn junction therebetween and having one end electrically connected to said first semiconductor layer and the other end exposed, said pn junction having a photoelectric conversion function; a first electrode formed on said body to permit a signal entry; a second electrode formed on said second semiconductor layer to permit the signal to be taken therefrom; and a third electrode formed on said region, said portion of the semiconductor body, light emission section and region being arranged on the same line.
Claim 3
Dependent Claim
43 words
A semiconductor optical device according to claim 1, further including a glass fiber for guiding a light to said first semiconductor layer, means for supplying a current signal to said first electrode, and means for taking a voltage signal from said second electrode.
Claim 4
Dependent Claim
29 words
A semiconductor optical device according to claim 2, in which said body has an opening in the other surface, in which the end of said glass fiber is located.
Claim 5
Dependent Claim
73 words
A semiconductor optical device according to claim 1, in which said body has a GaAs substrate and a GaAlAs liquid phase growth layer formed on the substrate, said first semiconductor layer has a GaAs liquid phase growth layer formed on the GaAlAs liquid phase growth layer and a GaAlAs liquid phase growth layer formed on said GaAs liquid phase growth layer, and said second semiconductor layer has a GaAs liquid phase growth layer.
Claim 6
Dependent Claim
53 words
A semiconductor optical device according to claim 4, in which said substrate has an opening to permit a portion of the GaAlAs liquid phase growth layer of the body to be exposed, and said region is formed in said second semiconductor layer in a manner to be located in opposition to said opening.
Claim 7
Dependent Claim
40 words
A semiconductor optical device according to claim 5, in which said first electrode is formed around said opening and has a ring-like shape, and said second electrode is located in opposition to said first electrode and has a ring-like shape.
References Cited (Backward Citations)
US3979587A
Cited
US3936855A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-11-26 | 1983-05-28 | 1983-11-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-11-26 | 1987-05-28 | 1987-11-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-11-26 | 1991-05-28 | 1991-11-27 | $7700.00 | Window Closed / Lapsed |