US4170496A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Beveled wafer for thermal gradient zone melting utilizing a beveled wafer edge
Assignee: General Electric Co
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Filing: 1978-12-07
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Granted: 1979-10-09
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Expires: 1998-12-07
Abstract
Abstract A body of semiconductor material to be processed by thermal gradient zone melting (TGZM) has an outer side peripheral surface beveled at a predetermined included angle alpha with the bottom surface of the body in order that the radiant heat impinging on the beveled side peripheral surface is equal to the radiant heat emitted by the beveled side peripheral surface of the body.
Inventors
- 👤 Thomas R. Anthony
- 👤 Harvey E. Cline
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 01:27
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/02; H; H10; H10P; H10P95/00; H10P95/50
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
119 words
A body of semiconductor material suitable for processing by thermal gradient zone melting comprising: a body of semiconductor material having a first type conductivity, a selected level of resistivity, an outer side peripheral surface, two major opposed substantially parallel surfaces which are, respectively, the top and bottom surfaces thereof, and at least one major surface has a preferred planar crystal structure orientation which is one selected from the group consisting of (100), (110) and (111), and a vertical axis of the body being substantially aligned at a predetermined angle with a first axis of the crystal structure; and the outer side peripheral surface is beveled to form an included angle α with the bottom surface equal to approximately 41°.
Claim 2
Dependent Claim
119 words
A body of semiconductor material suitable for processing by thermal gradient zone melting comprising: a body of semiconductor material having a first type conductivity, a selected level of resistivity, an outer side peripheral surface, two major opposed substantially parallel surfaces which are, respectively, the top and bottom surfaces thereof, and at least one major surface has a preferred planar crystal structure orientation which is one selected from the group consisting of (100), (110) and (111), and a vertical axis of the body being substantially aligned at a predetermined angle with a first axis of the crystal structure; and the outer side peripheral surface is beveled to form an included angle α with the bottom surface equal to approximately 41°.
Claim 3
Dependent Claim
17 words
The body of semiconductor material of claim 1 wherein the measure of angle α is 41° ±3°.
Claim 4
Dependent Claim
23 words
The body of semiconductor material of either claim 1 or 2 wherein the semiconductor material is silicon, germanium, gallium arsenide and silicon carbide.
References Cited (Backward Citations)
US3179860A
Cited
US3255055A
Cited
US3697829A
Cited
US3895967A
Cited
US4075038A
Cited
US4001047A
Cited
US4035199A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-10-08 | 1983-04-09 | 1983-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-10-08 | 1987-04-09 | 1987-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-10-08 | 1991-04-09 | 1991-10-09 | $7700.00 | Window Closed / Lapsed |