US4169740A
Expired / Lapsed
US
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Method of doping a body of amorphous semiconductor material by ion implantation
Assignee: Max-Planck-Gesellschaft zur Förderung der Wissenschaften eV
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Filing: 1978-06-16
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Granted: 1979-10-02
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Expires: 1998-06-16
Abstract
Abstract To provide for effective doping and obtain substantial conductivity change in amorphous semiconductor material, typically silicon, a body of said material is raised to a temperature above about 20° C. and below the recrystallization temperature, for example in the range of between 100° C., preferably above 200°-250° C. and below about 450° C. during the ion implantation. The doping ions are, for example for silicon, of groups III and V of the periodic system, particularly boron and phosphorus. Semiconductor junctions can be made by this process by selectively doping spatially limited regions of the semiconductor body to thereby produce semiconductor components by doping with ions of different characteristics, for example of different conductivity type.
Inventors
- 👤 Siegfried Kalbitzer
- 👤 Gerhard Muller
- 👤 Walter E. Spear
- 👤 Peter G. Le Comber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 07:53
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D62/00; H10D62/40; H10P30/202; H10P30/204; H10P32/00; H10P32/30; H10P32/302; Y; Y10; Y10S; Y10S148/00; Y10S148/024; Y10S148/093
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
82 words
Method of doping a body of amorphous semiconductor material by ion implantation comprising the steps of providing a body of amorphous semiconductor material; and bombarding said body by accelerated ions of a predetermined doping material and wherein, in accordance with the invention, while the bombarding step is carried out the method includes the step of heating said body to a temperature which is above a temperature of about 20° C. and below the recrystallization temperature of the body of amorphous semiconductor material.
Claim 2
Dependent Claim
82 words
Method of doping a body of amorphous semiconductor material by ion implantation comprising the steps of providing a body of amorphous semiconductor material; and bombarding said body by accelerated ions of a predetermined doping material and wherein, in accordance with the invention, while the bombarding step is carried out the method includes the step of heating said body to a temperature which is above a temperature of about 20° C. and below the recrystallization temperature of the body of amorphous semiconductor material.
Claim 3
Dependent Claim
26 words
Method according to claim 1, wherein, during the ion bombardment, the heating step comprises maintaining the semiconductor body at a temperature of over about 100° C.
Claim 4
Dependent Claim
25 words
Method according to claim 1, wherein, during the ion bombardment, the heating step comprises maintaining the semiconductor at a temperature of over about 200° C.
Claim 5
Dependent Claim
26 words
Method according to claim 1, wherein, during the ion bombardment, the heating step comprises holding the semiconductor body at a temperature of over about 250° C.
Claim 6
Dependent Claim
29 words
Method according to claim 2, 3 or 4, wherein, during the ion bombardment, the heating step comprises holding the semiconductor body at a temperature of below about 450° C.
Claim 7
Dependent Claim
14 words
Method according to claim 1, wherein the semiconductor body is an amorphous elemental semiconductor.
Claim 8
Dependent Claim
11 words
Method according to claim 6, wherein the semiconductor body is silicon.
Claim 9
Dependent Claim
25 words
Method according to claim 7, wherein the doping ions comprise ions of an element of the main groups III and V of the periodic system.
Claim 10
Dependent Claim
18 words
Method according to claim 7, wherein the doping ions comprise ions of at least one of: boron; phosphorus.
Claim 11
Dependent Claim
26 words
Method according to claim 1, wherein the ion implantation step comprises selective doping of spatially defined regions of the semiconductor body to produce a semiconductor component.
Claim 12
Dependent Claim
74 words
Method to produce a semiconductor junction by ion implantation in a body of semiconductor material comprising carrying out the ion implantation method steps of claim 1 over a spatially defined region of the semiconductor body with ions of a first doping material; and further carrying out the method steps of claim 1 with respect to the same region or to a spatially adjacent region of the semiconductor body with ions of another doping material.
Claim 13
Dependent Claim
96 words
Method to produce a semiconductor junction by ion implantation in a body of semiconductor material comprising carrying out the ion implantation method steps of claim 1 over a spatially defined region of the semiconductor body with ions of a first doping material, to form one ion implantation step cycle; and further carrying out the method steps of claim 1 in an additional step cycle with respect to the same region or to a spatially adjacent region of the semiconductor body with ions of a characteristic different from those used for implantation in said one step cycle.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-10-01 | 1983-04-02 | 1983-10-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-10-01 | 1987-04-02 | 1987-10-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-10-01 | 1991-04-02 | 1991-10-02 | $7700.00 | Window Closed / Lapsed |