Abstract A CMOS device comprising an N type semiconductor substrate, a P type well region diffused in the substrate, an n-channel MOS transistor formed in the P type well region, and a p-channel MOS transistor formed in the N type semiconductor substrate, and a method for manufacturing the CMOS device. In case the CMOS device serves as a CMOS inverter, the source region of the p-channel MOS transistor, the semiconductor substrate and the well layer constitute a parasitic PNP type bipolar transistor, and the source region of the n-channel MOS transistor, the well layer and the semiconductor substrate constitute a parasitic NPN type bipolar transistor. The product of the current amplification factor β 1 of the PNP type bipolar transistor and the current amplification factor β 2 of the NPN type bipolar transistor is smaller than 1.
A CMOS device comprising a semiconductor substrate of one conductivity type, a well layer of the opposite conductivity type formed in said semiconductor substrate, a first MOS transistor of one channel type comprising first drain and source regions formed in said substrate outside said well layer, a second MOS transistor of opposite channel type comprising second drain and source regions formed in said well layer, said substrate and said well layer respectively constituting, in the presence of impulse noise, the base region of first and second lateral parasitic bipolar transistors and the base region of first and second vertical parasitic bipolar transistors, said semiconductor substrate further comprising gold doping sufficiently to assure that the product of the current amplification factors β 1 of at least one of said lateral parasitic bipolar transistors and β 2 of at least one of said vertical parasitic bipolar transistors is smaller than 1.
Claim 2
Dependent Claim
149 words
A CMOS device comprising a semiconductor substrate of one conductivity type, a well layer of the opposite conductivity type formed in said semiconductor substrate, a first MOS transistor of one channel type comprising first drain and source regions formed in said substrate outside said well layer, a second MOS transistor of opposite channel type comprising second drain and source regions formed in said well layer, said substrate and said well layer respectively constituting, in the presence of impulse noise, the base region of first and second lateral parasitic bipolar transistors and the base region of first and second vertical parasitic bipolar transistors, said semiconductor substrate further comprising gold doping sufficiently to assure that the product of the current amplification factors β 1 of at least one of said lateral parasitic bipolar transistors and β 2 of at least one of said vertical parasitic bipolar transistors is smaller than 1.