US4167745A
Expired / Lapsed
US
⏱️ 0.0 years remaining
MIS-type field effect transistor and method of producing the same
Assignee: Toshiba Corp
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Filing: 1977-11-16
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Granted: 1979-09-11
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Expires: 1997-11-16
Abstract
Abstract An MIS-type field effect transistor, comprising a semiconductor substrate having a projection, source and drain regions formed in the substrate with the projection intervening therebetween, and a gate structure formed on the surface of the projection. The transistor is advantageous for enhancing the integration degree of an integrated circuit.
Inventors
- 👤 Masayuki Ishibashi
- 👤 Tuneo Morita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:23
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D62/00; H10D62/10; H10D62/117; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/143
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
96 words
A MIS-type field effect transistor, comprising: a semiconductor substrate of one conductivity type; spaced-apart source and drain regions of the opposite conductivity type formed at one surface of said semiconductor substrate; a semiconductor projection of said one conductivity type formed integrally on the substrate surface between said source and drain regions; a gate insulation film overlying the surface of the projection between the source and drain regions; and a gate electrode mounted on the gate insulation film, a long channel region being formed between the source and drain regions along the surface of the semiconductor projection.
Claim 2
Dependent Claim
96 words
A MIS-type field effect transistor, comprising: a semiconductor substrate of one conductivity type; spaced-apart source and drain regions of the opposite conductivity type formed at one surface of said semiconductor substrate; a semiconductor projection of said one conductivity type formed integrally on the substrate surface between said source and drain regions; a gate insulation film overlying the surface of the projection between the source and drain regions; and a gate electrode mounted on the gate insulation film, a long channel region being formed between the source and drain regions along the surface of the semiconductor projection.
Claim 3
Dependent Claim
18 words
The transistor according to claim 1, wherein the projection of the substrate is substantially oblong in cross section.
Claim 4
Dependent Claim
18 words
The transistor according to claim 1, wherein the projection of the substrate is substantially trapezoidal in cross section.
Claim 5
Independent Claim
105 words
A method of producing a MIS-type field effect transistor, comprising the steps of: forming a semiconductor substrate of one conductivity type; forming spaced-apart source and drain regions of the opposite conductivity type at one surface of said semiconductor substrate; forming a semiconductor projection of said one conductivity type integrally on the substrate surface between said source and drain regions; forming a gate insulation film overlying the surface of the projection between the source and drain regions; and mounting a gate electrode on the gate insulation film to form a long channel region between the source and drain regions along the surface of the semiconductor projection.
Claim 6
Independent Claim
105 words
A method of producing a MIS-type field effect transistor, comprising the steps of: forming a semiconductor substrate of one conductivity type; forming spaced-apart source and drain regions of the opposite conductivity type at one surface of said semiconductor substrate; forming a semiconductor projection of said one conductivity type integrally on the substrate surface between said source and drain regions; forming a gate insulation film overlying the surface of the projection between the source and drain regions; and mounting a gate electrode on the gate insulation film to form a long channel region between the source and drain regions along the surface of the semiconductor projection.
Claim 7
Dependent Claim
26 words
The method according to claim 1, wherein the field insulation film is formed before the step of forming the projection on the surface of the substrate.
References Cited (Backward Citations)
US4074300A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-09-10 | 1983-03-12 | 1983-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-09-10 | 1987-03-12 | 1987-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-09-10 | 1991-03-12 | 1991-09-11 | $7700.00 | Window Closed / Lapsed |