US4166782A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of anodically leveling semiconductor layers
Assignee: United States Department of the Navy
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Filing: 1978-11-06
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Granted: 1979-09-04
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Expires: 1998-11-06
Abstract
Abstract A method for the thinning and automatic leveling of layers of a semicondur for use in device fabrication applications. The method is to be employed with anodic thinning wherein a conducting semiconductor layer on a high resistivity substrate is placed in a suitable electrolyte and voltage is applied so that the sample is made positive with respect to a cathode, also immersed in the electrolyte. The instant method is directed to the anodic thinning of irregularities in the semiconductor by slowly immersing the semiconductor into the electrolyte such that the location of irregularities can be determined and processed by monitoring the anodic process.
Inventors
- 👤 David A. Collins
- 👤 Derek L. Lile
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 03:33
CPC Classifications
C; C25; C25F; C25F3/00; C25F3/02; C25F3/12; H; H10; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/613; H10P50/617
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
100 words
A process for anodically removing only irregularities on the surface of a previously thinned semiconductor device comprising the steps of: applying a positive voltage to the semiconductor device; gradually immersing said semiconductor device into a thinning electrolyte to provide sufficient time for only the raised regions on the irregular surface to anodize in the region immediately adjacent to the electrolyte surface as the device is being immersed; removing said device from said electrolyte; removing the oxide formed on the raised region of said device; drying said device; repeating said previous steps until oxide no longer forms on said semiconductor device.
Claim 2
Dependent Claim
100 words
A process for anodically removing only irregularities on the surface of a previously thinned semiconductor device comprising the steps of: applying a positive voltage to the semiconductor device; gradually immersing said semiconductor device into a thinning electrolyte to provide sufficient time for only the raised regions on the irregular surface to anodize in the region immediately adjacent to the electrolyte surface as the device is being immersed; removing said device from said electrolyte; removing the oxide formed on the raised region of said device; drying said device; repeating said previous steps until oxide no longer forms on said semiconductor device.
Claim 3
Dependent Claim
31 words
The process as recited in claim 1 further comprising the step of monitoring the electric current flow such that location of irregularities in the surface of said semiconductor can be determined.
Claim 4
Dependent Claim
42 words
The process as recited in claim 1 wherein the rate at which said semiconductor device is immersed is such that a current path is maintained through the thicker region of the irregular surface of the semiconductor until the thicker region is anodized.
Claim 5
Dependent Claim
19 words
The process as recited in claim 1 wherein said oxide removing step includes washing the semiconductor in dilute HF.
Claim 6
Dependent Claim
29 words
The process as recited in claim 1 wherein said steps are repeated until all thicker regions are removed and the surface of said semiconductor device is uniform in thickness.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-09-03 | 1983-03-05 | 1983-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-09-03 | 1987-03-05 | 1987-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-09-03 | 1991-03-05 | 1991-09-04 | $7700.00 | Window Closed / Lapsed |