US4160678A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Heterojunction solar cell
Assignee: Individual
•
Filing: 1978-04-06
•
Granted: 1979-07-10
•
Expires: 1998-04-06
Abstract
Abstract An improved efficiency heterojunction solar cell comprises a narrow-gap collector (or base) region and a wide-gap window region. The latter includes an inner and an outer region of the same conductivity type but of different impurity concentrations. The higher impurity concentration outer window region receives the incident light radiation. The impurity concentration in the inner window region is less than that in the inner collector region, with which it forms a p-n junction.
Inventors
- 👤 Faquir C. Jain
- 👤 Mahmoud A. Melehy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 06:51
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
115 words
A semiconductor solar cell comprising a window region of a semiconductor material of one conductivity type and having a given energy gap, a collector region of a different semiconductor material of a narrower energy gap and of an opposite conductivity type to said window region, said collector region forming a p-n heterojunction at its interface with said window region, the impurity concentration of an inner region of said window region adjacent to said heterojunction being less than half that of the portion of said collector region adjacent said heterojunction, said window region further including an outer window region spaced from said heterojunction and being of a greater conductivity than that of said inner window region.
Claim 2
Dependent Claim
115 words
A semiconductor solar cell comprising a window region of a semiconductor material of one conductivity type and having a given energy gap, a collector region of a different semiconductor material of a narrower energy gap and of an opposite conductivity type to said window region, said collector region forming a p-n heterojunction at its interface with said window region, the impurity concentration of an inner region of said window region adjacent to said heterojunction being less than half that of the portion of said collector region adjacent said heterojunction, said window region further including an outer window region spaced from said heterojunction and being of a greater conductivity than that of said inner window region.
Claim 3
Dependent Claim
30 words
The semiconductor cell of claim 1, in which the impurity concentration of said outer window region is sufficiently high to establish a condition of degeneracy in said outer window region.
Claim 4
Dependent Claim
52 words
The semiconductor cell of claim 1, in which the impurity concentration of said inner window region is substantially uniform and between 5×10 15 /cm 3 and 10 17 /cm 3 , and that in said portion of said collector region is between 10 16 /cm 3 and 10 18 /cm 3 .
References Cited (Backward Citations)
US3081370A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-07-09 | 1983-01-08 | 1983-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-07-09 | 1987-01-08 | 1987-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-07-09 | 1991-01-08 | 1991-07-10 | $7700.00 | Window Closed / Lapsed |