US4157610A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a field effect transistor
Assignee: Toshiba Corp
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Filing: 1977-08-18
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Granted: 1979-06-12
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Expires: 1997-08-18
Abstract
Abstract The exposed surface of a semi-insulating compound semiconductor substrate is anodized while light is irradiated to the exposed surface to form a gate insulating film on the substrate between source and drain regions.
Inventors
- 👤 Kiyoo Kamei
- 👤 Toshiaki Ikoma
- 👤 Hirokuni Tokuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 05:59
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0411; H10D30/60; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6312; H10P14/6324
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
126 words
A method of producing a field effect transistor, comprising a first step of preparing a semi-insulating compound semiconductor substrate formed of GaAs containing 10 8 to 10 13 atoms·cm -3 of an impurity, a second step of forming a high impurity concentration layer formed of GaAs of one conductivity type on one surface of the substrate, a third step of partly removing the high impurity concentration layer to divide said layer into two portions and expose partly the substrate surface, and a fourth step of forming a gate insulation film by subjecting the exposed portion of the substrate to anodization which is carried out while light having an energy greater than the prohibition band width of the compound semiconductor is being irradiated to the exposed portion.
Claim 2
Independent Claim
126 words
A method of producing a field effect transistor, comprising a first step of preparing a semi-insulating compound semiconductor substrate formed of GaAs containing 10 8 to 10 13 atoms·cm -3 of an impurity, a second step of forming a high impurity concentration layer formed of GaAs of one conductivity type on one surface of the substrate, a third step of partly removing the high impurity concentration layer to divide said layer into two portions and expose partly the substrate surface, and a fourth step of forming a gate insulation film by subjecting the exposed portion of the substrate to anodization which is carried out while light having an energy greater than the prohibition band width of the compound semiconductor is being irradiated to the exposed portion.
Claim 3
Dependent Claim
42 words
The method according to claim 1, wherein the third step comprises a step of forming a mask having an opening on the high impurity concentration layer and a step of selectively removing the high impurity concentration layer by etching utilizing said mask.
Claim 4
Dependent Claim
39 words
The method according to claim 2, wherein the surface region of the substrate is slightly etched away to form a recess on the surface of the substrate in the etching step for selectively removing the high impurity concentration layer.
Claim 5
Dependent Claim
50 words
The method according to claim 1, which further comprises a fifth step of forming a gate electrode on the gate oxide film, a source electrode on one portion of the divided high impurity concentration layer and a drain electrode on the other portion of the divided high impurity concentration layer.
Claim 6
Dependent Claim
73 words
The method according to claim 4, wherein the fifth step comprises forming a mask having openings, said mask covering both of the divided portions of the high impurity concentration layer, forming a metal layer by vapor deposition extending to cover the mask and that portions of the high impurity concentration layer which have been exposed by the openings of the mask, and peeling off the mask together with the metal layer formed thereon.
Claim 7
Independent Claim
155 words
A method of producing a field effect transistor, comprising a first step of preparing a semi-insulating compound semiconductor substrate formed of GaAs containing 10 8 to 10 13 atoms·cm -3 of an impurity, a second step of forming a mask having two openings apart from each other on the substrate, a third step of diffusing an impurity into the substrate through the openings of the mask so as to form source and drain regions of one conductivity type in the substrate, a fourth step of removing the mask between the source and drain regions so as to expose the corresponding portion of the substrate, and a fifth step of forming a gate insulation film by anodic oxidation of the exposed portion of the substrate, said anodic oxidation being carried out while light having an energy greater than the prohibition band width of the compound semiconductor is being irradiated to the exposed portion of the substrate.
Claim 8
Independent Claim
155 words
A method of producing a field effect transistor, comprising a first step of preparing a semi-insulating compound semiconductor substrate formed of GaAs containing 10 8 to 10 13 atoms·cm -3 of an impurity, a second step of forming a mask having two openings apart from each other on the substrate, a third step of diffusing an impurity into the substrate through the openings of the mask so as to form source and drain regions of one conductivity type in the substrate, a fourth step of removing the mask between the source and drain regions so as to expose the corresponding portion of the substrate, and a fifth step of forming a gate insulation film by anodic oxidation of the exposed portion of the substrate, said anodic oxidation being carried out while light having an energy greater than the prohibition band width of the compound semiconductor is being irradiated to the exposed portion of the substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-06-11 | 1982-12-11 | 1983-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-06-11 | 1986-12-11 | 1987-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-06-11 | 1990-12-11 | 1991-06-12 | $7700.00 | Window Closed / Lapsed |