US4156963A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a semiconductor device
Assignee: Toshiba Corp
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Filing: 1977-12-22
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Granted: 1979-06-05
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Expires: 1997-12-22
Abstract
Abstract A method for manufacturing a semiconductor device having a cathode layer divided into a plurality of mesa type cathode layer portions and used under pressure applied from the cathode layer side through a pressing plate, the method comprising steps of disposing a flat plate having a lateral width covering at least from the outer edge of a cathode electrode disposed on one outermost cathode layer portion to the outer edge of a cathode electrode disposed on the other outermost cathode layer portion, applying an external pressure through the flat plate, and then disposing the pressing plate.
Inventors
- 👤 Isamu Tsuji
- 👤 Nobuo Itazu
- 👤 Katsuhiko Takigami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:07
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/482; H10W20/484; H10D; H10D18/00; H10D18/60; H10W72/00; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49169
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
233 words
A method for manufacturing a mesa type semiconductor device which is used under pressure applied between an anode terminal plate and a cathode terminal plate and which includes a semiconductor body having an outer layer divided into a plurality of outer portions, the method comprising steps of: preparing a semiconductor body having two outer layers one of which is divided into a plurality of outer layer portions, each of said outer layer portions being provided with a first electrode and the other outer layer being provided with a second electrode; providing a support plate for the resultant structure in such a manner that said second electrode comes in contact with one surface of said support plate; mounting a first terminal plate on the other surface of said support plate by means of solder means; disposing on said first electrodes a flat plate having a lateral width covering at least from the outer edge of one outermost first electrode to the outer edge of the other outermost first electrode; applying a pressure from outside on to said semiconductor body through said flat plate; removing said flat plate; disposing on the first electrodes a pressing plate having a lateral width smaller than a distance ranging from the outer edge of said one outermost first electrode to the outer edge of said other outermost first electrode; and disposing a second terminal plate on the pressing plate.
Claim 2
Independent Claim
233 words
A method for manufacturing a mesa type semiconductor device which is used under pressure applied between an anode terminal plate and a cathode terminal plate and which includes a semiconductor body having an outer layer divided into a plurality of outer portions, the method comprising steps of: preparing a semiconductor body having two outer layers one of which is divided into a plurality of outer layer portions, each of said outer layer portions being provided with a first electrode and the other outer layer being provided with a second electrode; providing a support plate for the resultant structure in such a manner that said second electrode comes in contact with one surface of said support plate; mounting a first terminal plate on the other surface of said support plate by means of solder means; disposing on said first electrodes a flat plate having a lateral width covering at least from the outer edge of one outermost first electrode to the outer edge of the other outermost first electrode; applying a pressure from outside on to said semiconductor body through said flat plate; removing said flat plate; disposing on the first electrodes a pressing plate having a lateral width smaller than a distance ranging from the outer edge of said one outermost first electrode to the outer edge of said other outermost first electrode; and disposing a second terminal plate on the pressing plate.
Claim 3
Dependent Claim
38 words
A method according to claim 1 wherein said flat plate has a lateral width equal to a distance from the outer edge of said one outermost first electrode to the outer edge of said other outermost first electrode.
Claim 4
Dependent Claim
39 words
A method according to claim 1 wherein said first flat plate has a lateral width larger than said distance from the outer edge of said one outermost first electrode to the outer edge of said other outermost first electrode.
Claim 5
Dependent Claim
24 words
A method according to claim 1 wherein said pressure to be applied on to said semiconductor body is more than 300 kg/cm 2 .
Claim 6
Dependent Claim
17 words
A method according to claim 4 wherein said pressure ranges from 350 to 450 kg/cm 2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-06-04 | 1982-12-04 | 1983-06-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-06-04 | 1986-12-04 | 1987-06-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-06-04 | 1990-12-04 | 1991-06-05 | $7700.00 | Window Closed / Lapsed |