Charge transfer transversal filter

Claim 2

An integrated circuit, transversal filter disposed on a substrate comprising: a bucket-brigade charge transfer means formed on said substrate, said transfer means including a plurality of spaced-apart wells, each of which comprises a doped region in said substrate and a plurality of first gates, each of approximately equal area, above said wells for transferring charge from well-to-well when clocking signals are applied to said first gates; each of said wells extending beyond the opposite edges of said first gates transverse to the direction of said transferring charge to form oppositely disposed extended well regions; a plurality of pairs of second gates, each member of said pair disposed above one of said oppositely disposed extended well regions, each pair of said second gates having approximately equal area with the division of area between said members of each pair being predetermined so as to define the characteristics of said filter; whereby the output signal from said transversal filter may be sensed apart from said clocking signals on said second gates.

Claim 3

The filter defined by claim 1 wherein said second gates on each of said opposite edges of said first gate are coupled to common lines so as to provide summing nodes.

Claim 4

The filter defined by claim 2 wherein each of said wells comprises an n-type region in a p-type silicon substrate.

Claim 5

An integrated circuit, transversal filter disposed on a substrate comprising: a bucket-brigade charge transfer means formed on said substrate, said transfer means including a plurality of spaced-apart doped regions in said substrate and a plurality of transfer gates of approximately equal area above said regions for transferring charge from region-to-region when clocking signals are applied to said transfer gates; each of said regions extending beyond opposite edges of said transfer gate transverse to the direction of said transferring charge to form first and second oppositely disposed extended regions; a plurality of first sensing gates disposed above said first regions and coupled to a first line, each of said first sensing gates having a predetermined area used to define the characteristics of said filter; a plurality of second sensing gates disposed above said second regions and coupled to a second line, each of said second sensing gates having a predetermined area used to define the characteristics of said filter, the total area of said first and second gates disposed over each of said regions being approximately equal; whereby output signals from said transversal filter may be sensed apart from clocking signals on said lines.

Claim 6

An integrated circuit, transversal filter disposed on a substrate comprising: a bucket-brigade charge transfer means formed on said substrate, said transfer means including a plurality of spaced-apart doped regions in said substrate and a plurality of transfer gates of approximately equal area above said regions for transferring charge from region-to-region when clocking signals are applied to said transfer gates; each of said regions extending beyond opposite edges of said transfer gate transverse to the direction of said transferring charge to form first and second oppositely disposed extended regions; a plurality of first sensing gates disposed above said first regions and coupled to a first line, each of said first sensing gates having a predetermined area used to define the characteristics of said filter; a plurality of second sensing gates disposed above said second regions and coupled to a second line, each of said second sensing gates having a predetermined area used to define the characteristics of said filter, the total area of said first and second gates disposed over each of said regions being approximately equal; whereby output signals from said transversal filter may be sensed apart from clocking signals on said lines.

Claim 7

The filter defined by claim 4 wherein the coupling between each of said sensing gates and said lines includes an extension of each of said sensing gates originating along a side of said sensing gates.

Claim 8

The filter defined by claim 5 wherein said region each comprise n-type regions in a p-type substrate.

Claim 9

The filter defined by claim 4 wherein said first sensing gates are formed in adjacent pairs of equal area and said second sensing gates are formed in adjacent pairs of equal area.

Claim 10

The filter defined by claim 4 wherein the difference in area between adjacent first gates and between adjacent second gates defines said characteristics of said filter.