US4156558A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Incoherent to coherent transducer and method of manufacture
Assignee: Grumman Corp
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Filing: 1977-08-04
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Granted: 1979-05-29
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Expires: 1997-08-04
Abstract
Abstract A liquid crystal device comprising a liquid crystal layer intermediate a substrate coated by a surfactant and another substrate coated by a photoconductive and a surfactant thereover that is manufactured by taking cleaned electrically conductive transparent substrates and depositing a photoconductor such as cadmium sulfide to one with thereafter treating that one so as to coat it with a surfactant and at the same time coat the other substrate with a surfactant before joining the substrates with a liquid crystal therebetween whose molecules are oriented by the said surfactant.
Inventors
- 👤 Alex Grumet
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:16
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1337; G02F1/133711; G02F1/133719; G02F1/135; Y; Y10; Y10S; Y10S359/00; Y10S359/90
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
383 words
A method of fabricating a real time transducer: preparing conductive surfaces and thereafter cleaning such transparent electrode substrates by exposing same to a 5 minute boil in a cleaner, a 5 minute boil in deionized water, a 5 minute boil in hydrogen peroxide and lastly a 5 minute boil in deionized water with a rinse intermediate each step aforesaid in deionized water; storing said cleaned substrates in deionized water; blow drying said substrates with filtered air; vacuum deposition of cadmium sulfide at a rate substantially equal to two microns per hour by preheating one of said substrates by radiantly heating with a hotplate for 40 minutes and applying furnace heat for 10 minutes to bring the substrate to between 180° C. to 200° C. for desired stoichiometry of the cadmium sulfide film, said deposition being allowed to continue for approximately 30 minutes; post processing said cadmium sulfide film covered substrate by placing same in a quartz tube adjacent a composition of 80 grams of electronic grade cadmium sulfide dusted with 5 grams of 320 mesh copper powder, purging said tube with 3500 cc/minute of nitrogen gas for 15 minutes, flowing through the tube interior thereafter oxygen gas at 2.5 cc/min, bleeding a 7% oxygen-nitrogen mixture through a 37% hydrogen chloride solution and introducing same to the tube, and heating the interior of the tube such that flow across the composition and thence the film will be at approximately 500° C. from 8 inches to either side of the center of the tube where the film and composition are situated; applying a monolayer of surfactant to said cadmium sulfide and said untreated substrate of an alkoxysilane of a molecular bonding group that will react chemically with the film on the substrate to form a chemically stable bond, by applying said surfactant in a 0.5% water solution by volume with agitation of the substrate at room temperature for approximately 5 minutes and then rinsing in deionized water to remove excess silane; depositing a few drops of a liquid crystal on the surfactant over the cadmium sulfide; encircling an area of liquid crystal with dielectric spacers; and applying the substrate coated with surfactant only over the liquid crystal deposited over the cadmium sulfide to spread the liquid crystal out to a thickness determined by the spacers.
Claim 2
Independent Claim
383 words
A method of fabricating a real time transducer: preparing conductive surfaces and thereafter cleaning such transparent electrode substrates by exposing same to a 5 minute boil in a cleaner, a 5 minute boil in deionized water, a 5 minute boil in hydrogen peroxide and lastly a 5 minute boil in deionized water with a rinse intermediate each step aforesaid in deionized water; storing said cleaned substrates in deionized water; blow drying said substrates with filtered air; vacuum deposition of cadmium sulfide at a rate substantially equal to two microns per hour by preheating one of said substrates by radiantly heating with a hotplate for 40 minutes and applying furnace heat for 10 minutes to bring the substrate to between 180° C. to 200° C. for desired stoichiometry of the cadmium sulfide film, said deposition being allowed to continue for approximately 30 minutes; post processing said cadmium sulfide film covered substrate by placing same in a quartz tube adjacent a composition of 80 grams of electronic grade cadmium sulfide dusted with 5 grams of 320 mesh copper powder, purging said tube with 3500 cc/minute of nitrogen gas for 15 minutes, flowing through the tube interior thereafter oxygen gas at 2.5 cc/min, bleeding a 7% oxygen-nitrogen mixture through a 37% hydrogen chloride solution and introducing same to the tube, and heating the interior of the tube such that flow across the composition and thence the film will be at approximately 500° C. from 8 inches to either side of the center of the tube where the film and composition are situated; applying a monolayer of surfactant to said cadmium sulfide and said untreated substrate of an alkoxysilane of a molecular bonding group that will react chemically with the film on the substrate to form a chemically stable bond, by applying said surfactant in a 0.5% water solution by volume with agitation of the substrate at room temperature for approximately 5 minutes and then rinsing in deionized water to remove excess silane; depositing a few drops of a liquid crystal on the surfactant over the cadmium sulfide; encircling an area of liquid crystal with dielectric spacers; and applying the substrate coated with surfactant only over the liquid crystal deposited over the cadmium sulfide to spread the liquid crystal out to a thickness determined by the spacers.
Claim 3
Dependent Claim
34 words
The method of claim 1 wherein the liquid crystal is deposited and spread after heating it above its upper transition temperature to the isotropic state and slowly thereafter cooling it to the mesomorphic phase.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-05-28 | 1982-11-27 | 1983-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-05-28 | 1986-11-27 | 1987-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-05-28 | 1990-11-27 | 1991-05-29 | $7700.00 | Window Closed / Lapsed |