Abstract The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region therein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and the P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power conversion efficiency of the solar cell.
A process for fabricating solar cells comprising: (a) providing a substrate material selected from the group of materials consisting of aluminum phosphide antimonide and aluminum indium phosphide, (b) depositing a thin layer of N-type gallium arsenide on said substrate, and (c) diffusing a P-type impurity from said substrate into said thin gallium arsenide layer to form a PN junction therein, whereby the gallium required to provide a gallium arsenide photovoltaic PN junction layer is minimized, and said substrate exhibits a high bandgap energy suitable for good transmission of sunlight to said gallium arsenide layer, thus enhancing the power conversion efficiency of said solar cell.
Claim 2
Dependent Claim
104 words
A process for fabricating solar cells comprising: (a) providing a substrate material selected from the group of materials consisting of aluminum phosphide antimonide and aluminum indium phosphide, (b) depositing a thin layer of N-type gallium arsenide on said substrate, and (c) diffusing a P-type impurity from said substrate into said thin gallium arsenide layer to form a PN junction therein, whereby the gallium required to provide a gallium arsenide photovoltaic PN junction layer is minimized, and said substrate exhibits a high bandgap energy suitable for good transmission of sunlight to said gallium arsenide layer, thus enhancing the power conversion efficiency of said solar cell.
Claim 3
Dependent Claim
67 words
The process defined in claim 1 wherein said thin layer of N-type gallium arsenide is formed by exposing one surface of said substrate to a saturated solution of gallium arsenide in gallium and maintaining said substrate in said solution for a predetermined time while reducing the temperature thereof at a predetermined controlled rate to thereby control the thickness of said galliium arsenide layer deposited on said substrate.
Claim 4
Dependent Claim
65 words
The process defined in claim 1 which further includes providing electrical contacts on both said substrate and on said thin gallium arsenide layer for extracting power from said solar cell upon its receipt of sunlight, and further providing a chosen anti-reflective coating adjacent to electrical contacts on the surface of said substrate, whereby said substrate serves as a high bandgap window layer for receiving sunlight.