US4153925A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectric formed by a thin-layer polymer, a process for producing said layer and electrical capacitors comprising this dielectric
Assignee: Thales SA
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Filing: 1978-02-06
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Granted: 1979-05-08
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Expires: 1998-02-06
Abstract
Abstract A dielectric thin layer consisting of polymerized perfluoro-2-butene: (C F.sub.3 -C F=C F-C F.sub.3).sub.n presenting very good characteristics for production of single or multi-layer capacitors, obtained with a rapid deposition by glow discharge in an a.c. electrical field. The glow discharge is carried out in the gaseous phase of perfluoro-2-butene under highly reduced pressure and an a.c. voltage of 300 volts, the maximum rate of layer formation (0.7 micron per minute) being obtained for a frequency of 13.56Mc/s, at a temperature of 0° C. under a pressure of 0.1 Torr when the useful power of the glow discharge is of 5 to 10 watts.
Inventors
- 👤 Maryse Gazard
- 👤 Jean-Claude Dubois
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:02
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/62; H; H01; H01B; H01B3/00; H01B3/18; H01B3/30; H01B3/44; H01B3/443; H01B3/445; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/14; H01G4/145
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
107 words
A process for producing a dielctric thin layer consisting of polymerized perfluoro-2-butene, comprising the steps of: (a) introducing into a glow discharge apparatus a substrate intended to receive said dielectric layer and monomeric perfluoro-2-butene in the gaseous phase; (b) reducing the pressure of said gaseous phase in the range from 0.05 to 0.3 Torr in said apparatus; (c) creating a glow discharge under an a.c voltage of frequency ranging from 25 c/s to 15 Mc/s; (d) maintaining the glow discharge for a period of time calculated as a function of the rate of formation of the layer, said rate being from 4000 to 7000 Angstroms per minute.
Claim 2
Dependent Claim
107 words
A process for producing a dielctric thin layer consisting of polymerized perfluoro-2-butene, comprising the steps of: (a) introducing into a glow discharge apparatus a substrate intended to receive said dielectric layer and monomeric perfluoro-2-butene in the gaseous phase; (b) reducing the pressure of said gaseous phase in the range from 0.05 to 0.3 Torr in said apparatus; (c) creating a glow discharge under an a.c voltage of frequency ranging from 25 c/s to 15 Mc/s; (d) maintaining the glow discharge for a period of time calculated as a function of the rate of formation of the layer, said rate being from 4000 to 7000 Angstroms per minute.
Claim 3
Dependent Claim
34 words
A process as claimed in claim 1, wherein said pressure is about 0.1 Torr, said apparatus being operated so as to consume in the glow discharge a useful power of 5 to 10 Watts.
Claim 4
Dependent Claim
19 words
An electrical capacitor containing at least one layer of dielectric polymerized perfluoro-2-butene according to the process of claim 1.
Claim 5
Dependent Claim
113 words
A process for producing a capacitor having a plurality of thin dielectric perfluoro-2-butene thereon applied at a rapid rate, said process comprising the steps of: (a) depositing a metal layer on a substrate; (b) forming a layer of polymer on the layer deposited in the preceding step by glow discharge in a gaseous phase of monomeric perfluoro-2-butene under conditions of reduced pressure of 0.05 to 0.3 Torr, at an a.c. voltage frequency ranging from 25 c/s to 15 Mc/s so as to form said layer at a rate of from 4000 to 7000 Angstroms per minute; and thereafter (c) depositing a second metal layer on the layer of polymer deposited in step (b).
Claim 6
Dependent Claim
113 words
A process for producing a capacitor having a plurality of thin dielectric perfluoro-2-butene thereon applied at a rapid rate, said process comprising the steps of: (a) depositing a metal layer on a substrate; (b) forming a layer of polymer on the layer deposited in the preceding step by glow discharge in a gaseous phase of monomeric perfluoro-2-butene under conditions of reduced pressure of 0.05 to 0.3 Torr, at an a.c. voltage frequency ranging from 25 c/s to 15 Mc/s so as to form said layer at a rate of from 4000 to 7000 Angstroms per minute; and thereafter (c) depositing a second metal layer on the layer of polymer deposited in step (b).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-05-07 | 1982-11-06 | 1983-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-05-07 | 1986-11-06 | 1987-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-05-07 | 1990-11-06 | 1991-05-08 | $7700.00 | Window Closed / Lapsed |